STMICROELECTRONICS STB50NE10L

STB50NE10L
®
N - CHANNEL 100V - 0.020Ω - 50A - D2PAK
STripFET POWER MOSFET
PRELIMINARY DATA
TYPE
STB50NE10L
■
■
■
■
■
■
V DSS
R DS(on)
ID
100 V
<0.025 Ω
50 A
TYPICAL RDS(on) = 0.020 Ω
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
LOW GATE CHARGE AT 100 oC
APPLICATION ORIENTED
CHARACTERIZATION
FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
3
1
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
Size " strip-based
process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore
a
remarkable
manufacturing
reproducibility.
D2PAK
TO-263
(suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ DC-DC & DC-AC CONVERTERS
■ AUTOMOTIVE ENVIRONMENT
■
ABSOLUTE MAXIMUM RATINGS
Symbol
V DS
V DGR
V GS
Parameter
Value
Unit
Drain-source Voltage (V GS = 0)
100
V
Drain- gate Voltage (R GS = 20 kΩ)
100
V
± 20
V
50
A
Gate-source Voltage
o
ID
Drain Current (continuous) at T c = 25 C
ID
o
IDM (•)
P tot
Drain Current (continuous) at T c = 100 C
35
A
Drain Current (pulsed)
200
A
Total Dissipation at T c = 25 o C
150
W
1
W/ o C
6
V/ns
Derating Factor
dv/dt ( 1 ) Peak Diode Recovery voltage slope
T stg
Tj
Storage Temperature
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
June 1998
-65 to 175
o
C
175
o
C
(1) ISD ≤ 50 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/5
STB50NE10L
THERMAL DATA
R thj-case
Rthj-amb
R thc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
o
1
62.5
0.5
300
C/W
oC/W
o
C/W
o
C
Max Value
Unit
50
A
300
mJ
AVALANCHE CHARACTERISTICS
Symbol
Parameter
I AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T j max)
E AS
Single Pulse Avalanche Energy
(starting T j = 25 o C, I D = I AR , VDD = 50 V)
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V (BR)DSS
I DSS
I GSS
Parameter
Drain-source
Breakdown Voltage
Test Conditions
I D = 250 µA
Zero Gate Voltage
V DS = Max Rating
Drain Current (V GS = 0) V DS = Max Rating
o
C
Gate-body Leakage
Current (V DS = 0)
Min.
Typ.
Max.
100
VGS = 0
Unit
V
T c = 125
V GS = ± 20 V
1
10
µA
µA
± 100
nA
ON (∗)
Symbol
Parameter
Test Conditions
ID = 250 µA
V GS(th)
Gate Threshold
Voltage
V DS = VGS
R DS(on)
Static Drain-source On
Resistance
V GS = 10V I D = 25 A
V GS = 5 V I D = 25 A
ID(on)
On State Drain Current V DS > I D(on) x R DS(on)max
V GS = 10 V
Min.
Typ.
Max.
Unit
1
1.7
2.5
V
0.020
00.24
0.025
0.030
mΩ
µΩ
50
A
DYNAMIC
Symbol
g fs (∗)
C iss
C oss
C rss
2/5
Parameter
Test Conditions
Forward
Transconductance
V DS > I D(on) x R DS(on)max
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS = 25 V
f = 1 MHz
I D =25 A
V GS = 0
Min.
Typ.
20
35
TBD
Max.
Unit
S
TBD
pF
pF
pF
STB50NE10L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
t d(on)
tr
Turn-on Time
Rise Time
V DD = 50 V
R G =4.7 Ω
Qg
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 80 V
Min.
I D = 25 A
V GS = 10 V
I D = 50 A
VGS = 10 V
Typ.
Max.
Unit
TBD
TBD
ns
ns
TBD
TBD
nC
nC
nC
Typ.
Max.
Unit
TBD
TBD
ns
ns
ns
Typ.
Max.
Unit
50
200
A
A
SWITCHING OFF
Symbol
t r(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
Min.
V DD = 80 V I D = 50 A
R G =4.7 Ω V GS = 10 V
SOURCE DRAIN DIODE
Symbol
I SD
I SDM (•)
V SD (∗)
t rr
Q rr
I RRM
Parameter
Test Conditions
Min.
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD = 50 A
I SD = 50 A
V DD = 50 V
VGS = 0
di/dt = 100 A/µs
o
T j = 150 C
1.5
TBD
V
ns
nC
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
3/5
STB50NE10L
TO-263 (D2PAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.3
4.6
0.169
0.181
A1
2.49
2.69
0.098
0.106
B
0.7
0.93
0.027
0.036
B2
1.25
1.4
0.049
0.055
C
0.45
0.6
0.017
0.023
C2
1.21
1.36
0.047
0.053
D
8.95
9.35
0.352
0.368
E
10
10.28
0.393
0.404
G
4.88
5.28
0.192
0.208
L
15
15.85
0.590
0.624
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
E
A
C2
L2
D
L
L3
B2
B
A1
C
G
P011P6/C
4/5
STB50NE10L
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 1998 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
.
5/5