STMICROELECTRONICS STP45NE06LFP

STP45NE06L
STP45NE06LFP
®
N - CHANNEL 60V - 0.022Ω - 45A - TO-220/TO-220FP
STripFET POWER MOSFET
PRELIMINARY DATA
TYPE
V DSS
R DS(on)
ID
STP45NE06L
STP45NE06LFP
60 V
60 V
< 0.028 Ω
< 0.028 Ω
45 A
25 A
■
■
■
■
■
TYPICAL RDS(on) = 0.022 Ω
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
LOW GATE CHARGE 100 oC
LOW THRESHOLD DRIVE
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique "Single Feature
Size " strip-based process. The resulting transistor shows extremely high packing density for low
on-resistance, rugged avalance characteristics
and less critical alignment steps therefore a remarkable manufacturing reproducibility.
3
1
3
2
1
TO-220
2
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ DC-DC & DC-AC CONVERTERS
■
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP45NE06L STP45NE06LFP
V DS
V DGR
V GS
Drain-source Voltage (V GS = 0)
60
V
Drain- gate Voltage (R GS = 20 kΩ)
Gate-source Voltage
60
V
± 20
V
ID
Drain Current (continuous) at T c = 25 o C
45
25
A
ID
Drain Current (continuous) at T c = 100 o C
31
17.5
A
I DM (•)
P tot
Drain Current (pulsed)
180
180
A
Total Dissipation at T c = 25 o C
100
35
W
Derating Factor
0.67
0.23
W/ o C
VISO
Insulation Withstand Voltage (DC)
dv/dt
Peak Diode Recovery voltage slope
Tstg
Tj
Storage Temperature
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
June 1999

2000
7
V
V/ns
-65 to 175
o
C
175
o
C
(1) ISD ≤ 45 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/6
STP45NE06L/FP
THERMAL DATA
R thj-case
Thermal Resistance Junction-case
R thj-amb
R thc-sink
Tl
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
TO-220
TO-220FP
1.5
4.28
Max
62.5
0.5
300
o
C/W
o
C/W
C/W
o
C
o
AVALANCHE CHARACTERISTICS
Symbol
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T j max)
Parameter
45
A
E AS
Single Pulse Avalanche Energy
(starting T j = 25 o C, I D = I AR , V DD = 25V)
150
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V (BR)DSS
Parameter
Drain-source
Breakdown Voltage
Test Conditions
I D = 250 µA
Zero Gate Voltage
V DS = Max Rating
Drain Current (V GS = 0) V DS = Max Rating
IGSS
Gate-body Leakage
Current (V DS = 0)
Typ.
Max.
60
V GS = 0
I DSS
Min.
Unit
V
T c = 125 o C
V GS = ± 20 V
1
10
µA
µA
± 100
nA
ON (∗)
Symbol
Parameter
Test Conditions
V GS(th)
Gate Threshold Voltage V DS = V GS
R DS(on)
Static Drain-source On
Resistance
I D(on)
I D = 250 µA
V GS = 5 V
V GS = 10 V
Min.
Typ.
Max.
Unit
1
1.7
2.5
V
0.024
0.022
0.03
0.028
Ω
Ω
I D = 22.5 A
ID = 22.5 A
On State Drain Current V DS > I D(on) x R DS(on)max
V GS = 10 V
45
A
DYNAMIC
Symbol
g fs (∗)
C iss
C oss
C rss
2/6
Parameter
Test Conditions
Forward
Transconductance
V DS > I D(on) x R DS(on)max
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS = 25 V
f = 1 MHz
I D =22.5 A
V GS = 0
Min.
Typ.
15
30
2370
350
90
Max.
Unit
S
3600
480
100
pF
pF
pF
STP45NE06L/FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
t d(on)
tr
Turn-on Time
Rise Time
V DD = 30 V
R G =4.7Ω
Qg
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 48 V
Min.
I D = 22.5 A
V GS = 5 V
I D = 45 A
V GS = 5 V
Typ.
Max.
Unit
37
100
50
135
ns
ns
31
13
13
42
nC
nC
nC
Typ.
Max.
Unit
20
45
72
27
61
100
ns
ns
ns
Typ.
Max.
Unit
45
180
A
A
1.5
V
SWITCHING OFF
Symbol
tr(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
Min.
V DD = 48 V I D = 45 A
R G =4.7 Ω V GS = 10 V
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
I SDM (•)
Source-drain Current
Source-drain Current
(pulsed)
V SD (∗)
Forward On Voltage
I SD =45 A
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD = 45 A
V DD = 30 V
t rr
Q rr
I RRM
Min.
V GS = 0
di/dt = 100 A/µs
T j = 150 o C
90
ns
225
nC
5
Α
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
3/6
STP45NE06L/FP
TO-220 MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
D1
0.107
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
14.0
0.511
L2
16.4
L4
0.645
13.0
0.551
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
D1
C
D
A
E
L5
H2
G
G1
F1
L2
F2
F
Dia.
L5
L9
L7
L6
4/6
L4
P011C
STP45NE06L/FP
TO-220FP MECHANICAL DATA
mm
DIM.
MIN.
A
4.4
inch
TYP.
MAX.
MIN.
4.6
0.173
TYP.
MAX.
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
L2
0.409
16
0.630
28.6
30.6
1.126
1.204
L4
9.8
10.6
0.385
0.417
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
B
D
A
E
L3
L3
L6
F2
H
G
G1
¯
F
F1
L7
1 2 3
L2
L4
5/6
STP45NE06L/FP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
6/6
http://www.st.com
.