STP7NE10 ® N - CHANNEL 100V - 0.3 Ω - 7A - TO-220 STripFET POWER MOSFET PRELIMINARY DATA TYPE V DSS R DS(on) ID STP7NE10 100 V < 0.4 Ω 7A ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.3 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION 3 1 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique " Single Feature Size " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. 2 TO-220 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ DC MOTOR CONTROL (DISK DRIVES,etc.) ■ DC-DC & DC-AC CONVERTERS ■ SYNCHRONOUS RECTIFICATION ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR VGS Parameter Value Unit Drain-source Voltage (V GS = 0) 100 V Drain- gate Voltage (R GS = 20 kΩ) 100 V ± 20 V Gate-source Voltage o ID Drain Current (continuous) at T c = 25 C 7 A ID Drain Current (continuous) at T c = 100 o C 4.9 A Drain Current (pulsed) 28 A I DM (•) P tot dv/dt( 1 ) T st g Tj o Total Dissipation at T c = 25 C 45 W Derating Factor 0.3 W/ o C 6 V/ns Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature (•) Pulse width limited by safe operating area October 1999 -65 to 150 o C 175 o C (1) ISD ≤7 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX 1/5 STP7NE10 THERMAL DATA R thj-case R thj-amb R thc-sink Tl o 3.33 100 1.5 275 Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose C/W C/W o C/W o C o AVALANCHE CHARACTERISTICS Symbol Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max) E AS Single Pulse Avalanche Energy (starting T j = 25 o C, I D = I AR , V DD = 30 V) Max Value Unit 7 A 40 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating IGSS Gate-body Leakage Current (V DS = 0) Typ. Max. 100 V GS = 0 I DSS Min. Unit V T c = 100 o C V GS = ± 20 V 1 10 µA µA ± 100 nA ON (∗) Symbol Parameter Test Conditions I D = 250 µA V GS(th) Gate Threshold Voltage V DS = V GS R DS(on) Static Drain-source On Resistance V GS = 10 V ID = 3.5 A I D(on) On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V Min. Typ. Max. Unit 2 3 4 V 0.32 0.4 Ω 7 A DYNAMIC Symbol g fs (∗) C iss C oss C rss 2/5 Parameter Test Conditions Forward Transconductance V DS > I D(on) x R DS(on)max Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz I D =2.5 A V GS = 0 Min. Typ. Max. Unit 2.5 S 305 45 21 pF pF pF ® STP7NE10 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions t d(on) tr Turn-on Time Rise Time V DD = 50 V R G = 4.7 Ω Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 80 V Min. ID = 5 A Typ. Max. 6.5 15 I D = 3.5 A V GS = 5 V V GS = 5 V Unit ns ns 14 6 4 18 nC nC nC Typ. Max. Unit SWITCHING OFF Symbol Parameter Test Conditions Min. t d(Voff) tf Turn-off Delay Time Fall Time V DD = 50 V R G = 4.7 Ω I D = 3.5A V GS = 10 V 25 7 ns ns tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time V DD =80V R G = 4.7 Ω I D =7A V GS = 10 V 7 8 16 ns ns ns SOURCE DRAIN DIODE Symbol ISD I SDM (•) V SD (∗) t rr Q rr I RRM Parameter Test Conditions Min. Typ. Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 8 A I SD = 5 A V DD = 50 V V GS = 0 di/dt = 100 A/µs T j = 150 o C Max. Unit 7 28 A A 1.5 V 75 ns 210 µC 5.5 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area ® 3/5 STP7NE10 TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 14.0 0.511 L2 16.4 L4 0.645 13.0 0.551 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L5 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 4/5 L4 P011C ® STP7NE10 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. 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