STD30NE06 ® N - CHANNEL 60V - 0.025 Ω - 30A - DPAK STripFET " POWER MOSFET PRELIMINARY DATA TYPE STD30NE06 ■ ■ ■ ■ ■ ■ V DSS R DS(on) ID 60 V < 0.03 Ω 30 A TYPICAL RDS(on) = 0.025 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC APPLICATION ORIENTED CHARACTERIZATION FOR TAPE & REEL AND OTHER PACKAGING OPTIONS CONTACT SALES OFFICES 3 1 DPAK TO-252 DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature Size " strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. (Suffix "T4") INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING ■ SOLENOID AND RELAY DRIVERS ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ DC-DC & DC-AC CONVERTERS ■ ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS Parameter Value Unit Drain-source Voltage (V GS = 0) 60 V Drain- gate Voltage (R GS = 20 kΩ) 60 V ± 20 V 30 A Gate-source Voltage o ID Drain Current (continuous) at T c = 25 C ID o IDM (•) P tot Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor dv/dt T stg Tj Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature (•) Pulse width limited by safe operating area July 1998 21 A 120 A 55 W 0.37 W/ o C 7 V/ns -65 to 175 o C 175 o C (1) ISD ≤20 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX 1/5 STD30NE06 THERMAL DATA R thj-case Rthj-amb R thc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose o 2.72 100 1.5 275 C/W oC/W o C/W o C Max Value Unit 30 A 100 mJ AVALANCHE CHARACTERISTICS Symbol Parameter I AR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max) E AS Single Pulse Avalanche Energy (starting T j = 25 o C, I D = I AR , VDD = 25 V) ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS I DSS I GSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating Gate-body Leakage Current (V DS = 0) Min. Typ. Max. 60 VGS = 0 Unit V o T c =125 C V GS = ± 20 V 1 10 µA µA ± 100 nA ON (∗) Symbol Parameter Test Conditions V GS(th) Gate Threshold Voltage V DS = VGS ID = 250 µA R DS(on) Static Drain-source On Resistance V GS = 10V I D = 15 A ID(on) On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V Min. Typ. Max. Unit 2 3 4 V 0.025 0.030 Ω 30 A DYNAMIC Symbol g fs (∗) C iss C oss C rss 2/5 Parameter Test Conditions Forward Transconductance V DS > I D(on) x R DS(on)max Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz I D =15 A V GS = 0 Min. Typ. 15 25 2700 330 68 Max. Unit S 3500 450 90 pF pF pF STD30NE06 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions t d(on) tr Turn-on Time Rise Time V DD = 30 V R G =4.7 Ω Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD =48V Min. I D = 22 A V GS = 10 V I D = 45 A V GS = 10 V Typ. Max. Unit 27 100 50 135 ns ns 60 18 17 80 nC nC nC Typ. Max. Unit 20 45 72 27 60 100 ns ns ns Typ. Max. Unit 30 120 A A SWITCHING OFF Symbol t r(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions Min. V DD = 48 V I D = 45 A R G =4.7 Ω V GS = 10 V SOURCE DRAIN DIODE Symbol I SD I SDM (•) V SD (∗) t rr Q rr I RRM Parameter Test Conditions Min. Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 45 A I SD = 45 A V DD = 30 V VGS = 0 di/dt = 100 A/µs o T j = 150 C 1.5 V 70 ns 210 µC 6 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area 3/5 STD30NE06 TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.9 0.025 0.035 B2 5.2 5.4 0.204 0.212 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 9.35 10.1 0.368 0.397 L2 0.8 L4 0.031 0.6 1 0.023 0.039 A1 C2 A H A2 C DETAIL "A" L2 D = 1 = G 2 = = = E = B2 3 B DETAIL "A" L4 0068772-B 4/5 STD30NE06 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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