STD17NF03L N-CHANNEL 30V - 0.038Ω - 17A - DPAK/IPAK STripFET™ POWER MOSFET TYPE STD17NF03L ■ ■ ■ ■ ■ VDSS RDS(on) ID 30V <0.05Ω 17A TYPICAL RDS(on) = 0.038Ω EXCEPTIONAL dv/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL ADD SUFFIX “-1” FOR ORDERING IN IPAK VERSION DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. 3 3 2 1 1 DPAK IPAK INTERNAL SCHEMATIC DIAGRAM APPLICATIONS DC-DC & DC-AC CONVERTERS ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ SOLENOID AND RELAY DRIVERS ■ AUTOMOTIVE ENVIRONMENT ■ ABSOLUTE MAXIMUM RATINGS Symbol Value Unit Drain-source Voltage (VGS = 0) 30 V Drain-gate Voltage (RGS = 20 kΩ) 30 V Gate- source Voltage ±20 V ID Drain Current (continuos) at TC = 25°C 17 A ID Drain Current (continuos) at TC = 100°C 12 A Drain Current (pulsed) 68 A Total Dissipation at TC = 25°C 20 W 0.13 W/°C 6 V/ns 200 mJ VDS VDGR VGS IDM (●) PTOT Parameter Derating Factor dv/dt (1) Peak Diode Recovery voltage slope EAS (2) Single Pulse Avalanche Energy Tstg Tj Storage Temperature Max. Operating Junction Temperature (●) Pulse width limited by safe operating area Aug 2000 –65 to 175 °C 175 °C (1) I SD ≤17A, di/dt ≤300A/µs, VDD ≤ V (BR)DSS, Tj ≤ T JMAX. (2) Starting T j=25°C, ID=11A, V DD=15V 1/9 STD17NF03L THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 7.5 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Maximum Lead Temperature For Soldering Purpose 275 °C Tl ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS Parameter Drain-source Breakdown Voltage IDSS Zero Gate Voltage Drain Current (VGS = 0) IGSS Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 Min. Typ. Max. 30 Unit V VDS = Max Rating 1 µA VDS = Max Rating, TC = 125 °C 10 µA ±100 nA Max. Unit VGS = ±20V ON (1) Symbol Parameter Test Conditions Min. Typ. VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 8.5 A 0.038 0.05 VGS = 5 V, ID = 8.5 A 0.045 0.06 ID(on) On State Drain Current VDS > ID(on) x RDS(on)max, VGS = 10V 1 V 17 Ω A DYNAMIC Symbol gfs (1) 2/9 Parameter Forward Transconductance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Test Conditions VDS > ID(on) x RDS(on)max, ID =11A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. Max. Unit 7 S 330 pF 90 pF 40 pF STD17NF03L ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Parameter Turn-on Delay Time Rise Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Test Conditions Min. VDD = 15V, ID = 8.5A RG = 4.7Ω VGS = 4.5V (see test circuit, Figure 3) VDD = 24V, ID = 17A, VGS = 10V Typ. Max. Unit 11 ns 100 ns 6.5 9 nC 3.6 nC 2 nC SWITCHING OFF Symbol td(off) tf Parameter Turn-off-Delay Time Test Conditions Min. VDD = 15V, ID = 8.5A, RG = 4.7Ω, VGS = 4.5V (see test circuit, Figure 3) Fall Time Typ. Max. Unit 25 ns 22 ns Off-voltage Rise Time Vclamp =24V, ID =17A RG = 4.7Ω, VGS = 4.5V 22 ns tf Fall Time (see test circuit, Figure 5) 55 ns tc Cross-over Time 75 ns tr(off) SOURCE DRAIN DIODE Symbol ISD Parameter Test Conditions Min. Typ. Source-drain Current ISDM (1) Source-drain Current (pulsed) VSD (2) Forward On Voltage ISD = 17A, VGS = 0 trr Reverse Recovery Time ISD = 17A, di/dt = 100A/µs, VDD = 15V, Tj = 150°C (see test circuit, Figure 5) Qrr IRRM Max. Unit 17 A 68 A 1.5 V 30 ns Reverse Recovery Charge 18 nC Reverse Recovery Current 1.2 A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area Thermal Impedence 3/9 STD17NF03L Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/9 STD17NF03L Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/9 STD17NF03L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 STD17NF03L TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L2 0.8 0.031 L4 0.60 1.00 0.024 0.039 V2 0o 8o 0o 0o P032P_B 7/9 STD17NF03L TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. 2.4 0.086 MAX. 0.094 0.043 A 2.2 A1 0.9 1.1 0.035 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 B5 0.033 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 L2 0.8 0.047 1 0.031 0.039 A1 C2 A3 A C H B B3 = 1 = 2 G = = = E B2 = 3 B5 L D B6 L2 L1 0068771-E 8/9 STD17NF03L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 9/9