STD25NE03L N - CHANNEL 30V - 0.019 Ω - 25A - TO-251/TO-252 STripFET POWER MOSFET TYPE V DSS R DS(o n) ID STD25NE03L 30 V < 0.025 Ω 25 A ■ ■ ■ ■ TYPICAL RDS(on) = 0.019 Ω 100% AVALANCHE TESTED LOW GATE CHARGE APPLICATION ORIENTED CHARACTERIZATION 3 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. 3 2 1 IPAK TO-251 (Suffix ”-1”) 1 DPAK TO-252 (Suffix ”T4”) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SOLENOID AND RELAY DRIVERS ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ DC-DC & DC-AC CONVERTERS IN HIGH PERFORMANCE VRMs ■ AUTOMOTIVE ENVIRONMENT(INJECTION, ABS, AIR-BG, LAMPDRIVERS, Etc.) ABSOLUTE MAXIMUM RATINGS Symb ol V DS V DGR VGS Value Unit Drain-source Voltage (VGS = 0) Parameter 30 V Drain- gate Voltage (R GS = 20 kΩ) 30 V ± 20 V Gate-source Voltage o ID Drain Current (continuous) at Tc = 25 C 20** A ID Drain Current (continuous) at Tc = 100 C o 18** A Drain Current (pulsed) 100 A Total Dissipation at T c = 25 C 45 W Derating F actor 0.3 W /o C I DM (•) P tot T st g Tj o Storage T emperature Max. Operating Junction Temperature (•) Pulse width limited by safe operating area March 1999 -65 to 175 o C 175 o C (**) Value limited only by the package 1/9 STD25NE03L THERMAL DATA R thj -case R thj -amb R thc-sink Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature F or Soldering Purpose Max Max T yp o 3.33 100 1.5 275 C/W C/W o C/W o C o ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbo l V (BR)DSS Parameter Drain-source Breakdown Voltage Test Con ditions I D = 250 µA V GS = 0 I DSS V DS = Max Rating Zero Gate Voltage Drain Current (V GS = 0) V DS = Max Rating IGSS Gate-body Leakage Current (VDS = 0) Min. Typ. Max. 30 Unit V T c = 125 oC V GS = ± 20 V 1 10 µA µA ± 100 nA Max. Unit ON (∗) Symbo l Parameter Test Con ditions V GS(th) Gate Threshold Voltage V DS = V GS ID = 250 µA R DS(on) Static Drain-source On Resistance V GS = 10V V GS = 5V ID = 12.5 A ID = 12.5 A I D(o n) On State Drain Current V DS > ID(o n) x R DS(on )ma x V GS = 10 V Min. 1 Typ. 1.6 2.5 V 0.019 0.025 0.030 Ω Ω 20 A DYNAMIC Symbo l g f s (∗) C iss C os s C rss 2/9 Parameter Test Con ditions Forward Transconductance V DS > ID(o n) x R DS(on )ma x ID = 12.5 A Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V V GS = 0 f = 1 MHz Min. Typ. Max. Unit 10 16 S 1270 350 115 pF pF pF STD25NE03L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l Parameter Test Con ditions Min. Typ. Max. Unit t d(on) tr Turn-on Delay T ime Rise Time V DD = 15 V I D = 19 A R G = 4.7 Ω V GS = 4.5 V (Resistive Load, see fig. 3) 28 220 Qg Q gs Q gd Total G ate Charge Gate-Source Charge Gate-Drain Charge V DD = 24 V ID = 38 A V GS = 5 V 21 9 11 29 nC nC nC Typ. Max. Unit ns ns SWITCHING OFF Symbo l Parameter Test Con ditions Min. t d(of f) tf Turn-off Delay T ime Fall T ime V DD = 15 V I D = 19 A V GS = 4.5 V R G = 4.7 Ω (Resistive Load, see fig. 3) 45 35 ns ns tr (Voff) tf tc Off-voltage Rise T ime Fall T ime Cross-over Time V DD = 24 V I D = 38 A V GS = 4.5 V R G = 4.7 Ω (Induct ive Load, see fig. 5) 30 85 125 ns ns ns SOURCE DRAIN DIODE Symbo l Parameter Test Con ditions ISD I SDM (•) Source-drain Current Source-drain Current (pulsed) V SD (∗) Forward On Voltage I SD = 25 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 38 A di/dt = 100 A/µs T j = 150 o C V DD = 15 V (see test circuit, fig. 5) t rr Q rr I RRM Min. Typ. V GS = 0 Max. Unit 20 100 A A 1.5 V 45 ns 60 nC 2.5 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance 3/9 STD25NE03L Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/9 STD25NE03L Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/9 STD25NE03L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 STD25NE03L TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch MAX. MIN. A 2.2 TYP. 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 TYP. MAX. 0.85 B5 0.033 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039 A1 C2 A3 A C H B B6 = 1 = 2 G = = = E B2 = 3 B5 L D B3 L2 L1 0068771-E 7/9 STD25NE03L TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.9 0.025 0.035 B2 5.2 5.4 0.204 0.212 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 9.35 10.1 0.368 0.397 L2 0.8 L4 0.031 0.6 1 0.023 0.039 A1 C2 A H A2 C DETAIL ”A” L2 D = 1 = G 2 = = = E = B2 3 B DETAIL ”A” L4 0068772-B 8/9 STD25NE03L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibil ity for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specific ation mentioned in this publication are subjec t to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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