STMICROELECTRONICS STD40NE03L

STD40NE03L

N - CHANNEL 30V - 0.012 Ω - 40A TO-252
STripFET POWER MOSFET
TYPE
V DSS
R DS(o n)
ID
STD40NE03L
30 V
< 0.016 Ω
40 A
■
■
■
■
■
■
TYPICAL RDS(on) = 0.012 Ω
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
LOW GATE CHARGE
APPLICATION ORIENTED
CHARACTERIZATION
ADD SUFFIX ”T4” FOR ORDERING IN TAPE
& REEL
3
1
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique ”Single Feature
Size” strip-based process. The resulting transistor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a remarkable manufacturing reproducibility.
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ DC-DC & DC-AC CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symb ol
V DS
V DGR
Value
Unit
Drain-source Voltage (VGS = 0)
Parameter
30
V
Drain- gate Voltage (R GS = 20 kΩ)
30
V
G ate-source Voltage
± 20
V
ID
Drain Current (continuous) at Tc = 25 oC
20**
A
ID
o
Drain Current (continuous) at Tc = 100 C
20**
A
Drain Current (pulsed)
160
A
VGS
I DM (•)
P tot
T otal Dissipation at Tc = 25 o C
Derating Factor
dv/ dt (1 ) Peak Diode Recovery voltage slope
T st g
Tj
Storage Temperature
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
(**) Value limi ted only by the package
September 1999
55
W
0.37
W /o C
7
V/ns
-65 to 175
o
C
175
o
C
( 1) ISD ≤20A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/8
STD40NE03L
THERMAL DATA
R th j-pc b
R thj -amb
R t hj-s ink
Tl
Thermal Resistance Junction-PC Board
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
T yp
Maximum Lead Temperature F or Soldering Purpose
o
2.7
100
1.5
275
C/W
C/W
o
C/W
o
C
o
AVALANCHE CHARACTERISTICS
Symbo l
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
40
A
E AS
Single Pulse Avalanche Energy
(starting Tj = 25 o C, ID = IAR , V DD = 15 V)
100
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbo l
V (BR)DSS
Parameter
Drain-source
Breakdown Voltage
Test Con ditions
I D = 250 µA
V GS = 0
I DSS
V DS = Max Rating
Zero Gate Voltage
Drain Current (V GS = 0) V DS = Max Rating
IGSS
Gate-body Leakage
Current (VDS = 0)
Min.
Typ.
Max.
30
Unit
V
T c = 125 oC
V GS = ± 20 V
1
10
µA
µA
± 100
nA
Max.
Unit
ON (∗)
Symbo l
Parameter
Test Con ditions
ID = 250 µA
V GS(th)
Gate Threshold Voltage V DS = V GS
R DS(on)
Static Drain-source On
Resistance
V GS = 10 V
V GS = 5 V
I D(o n)
On State Drain Current
V DS > ID(o n) x R DS(on )ma x
V GS = 10 V
Min.
1
ID = 20 A
I D = 20 A
Typ.
1.7
2.5
V
0.012
0.016
0.022
Ω
Ω
40
A
DYNAMIC
Symbo l
g f s (∗)
C iss
C os s
C rss
2/8
Parameter
Test Con ditions
Forward
Transconductance
V DS > ID(o n) x R DS(on )ma x
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS = 25 V
f = 1 MHz
I D = 20 A
V GS = 0 V
Min.
Typ.
Max.
Unit
15
28
S
2200
570
200
pF
pF
pF
STD40NE03L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
t d(on)
tr
Turn-on Delay T ime
Rise Time
V DD = 15 V
I D = 30 A
R G = 4.7 Ω
V GS = 5 V
(Resistive Load, see fig. 3)
38
260
Qg
Q gs
Q gd
Total G ate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 24 V ID = 64 A V GS = 5 V
35
18
13
45
nC
nC
nC
Typ.
Max.
Unit
ns
ns
SWITCHING OFF
Symbo l
Parameter
Test Con ditions
Min.
t d(of f)
tf
Turn-off Delay T ime
Fall T ime
V DD = 15 V
I D = 30 A
V GS = 5 V
R G = 4.7 Ω
(Resistive Load, see fig. 3)
75
50
ns
ns
tr (Voff)
tf
tc
Off-voltage Rise T ime
Fall T ime
Cross-over Time
V DD = 24 V
I D = 64 A
V GS = 5 V
R G = 4.7 Ω
(Induct ive Load, see fig. 5)
35
120
175
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Parameter
Test Con ditions
ISD
I SDM (•)
Source-drain Current
Source-drain Current
(pulsed)
V SD (∗)
Forward On Voltage
I SD = 40 A
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD = 64 A
di/dt = 100 A/µs
T j = 150 o C
V DD = 15 V
(see test circuit, fig. 5)
t rr
Q rr
I RRM
Min.
Typ.
V GS = 0
Max.
Unit
40
160
A
A
1.5
V
55
ns
0.1
µC
3.5
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
3/8
STD40NE03L
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/8
STD40NE03L
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
STD40NE03L
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8
STD40NE03L
TO-252 (DPAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
2.2
2.4
0.086
0.094
A1
0.9
1.1
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.9
0.025
0.035
B2
5.2
5.4
0.204
0.212
C
0.45
0.6
0.017
0.023
C2
0.48
0.6
0.019
0.023
D
6
6.2
0.236
0.244
E
6.4
6.6
0.252
0.260
G
4.4
4.6
0.173
0.181
H
9.35
10.1
0.368
0.397
L2
0.8
L4
0.031
0.6
1
0.023
0.039
A1
C2
A
H
A2
C
DETAIL ”A”
L2
D
=
1
=
G
2
=
=
=
E
=
B2
3
B
DETAIL ”A”
L4
0068772-B
7/8
STD40NE03L
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibil ity for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specific ation mentioned in this publication are
subjec t to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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