STMICROELECTRONICS STB3015L

STB3015L
STP3015L
®
N - CHANNEL 30V - 0.013 Ω - 40A - D2PAK/TO-220
STripFET POWER MOSFET
PRELIMINARY DATA
TYPE
V DSS
R DS(on)
ID
STB3015L
30 V
< 0.0155 Ω
40 A
■
■
■
■
■
TYPICAL RDS(on) = 0.013 Ω
EXCEPTIONAL dv/dt CAPABILITY
LOW GATE CHARGE A 100oC
APPLICATION ORIENTED
CHARACTERIZATION
FOR THROUGH-HOLE VERSION
CONTACT SALES OFFICE
3
1
3
D2PAK
TO-263
1
TO-220
(Suffix "T4")
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique " Single Feature
Size " strip-based process. The resulting transistor shows extremely high packing density for
low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore
a remarkable manufacturing reproducibility.
2
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ DC-DC & DC-AC CONVERTERS IN HIGH
PERFORMANCE VRMs
■ AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
■
ABSOLUTE MAXIMUM RATINGS
Symbol
V DS
V DGR
V GS
Parameter
Value
Unit
Drain-source Voltage (V GS = 0)
30
V
Drain- gate Voltage (R GS = 20 kΩ)
30
V
± 20
V
40
A
Gate-source Voltage
o
ID
Drain Current (continuous) at T c = 25 C
ID
o
I DM (•)
Ptot
Drain Current (continuous) at T c = 100 C
Drain Current (pulsed)
Total Dissipation at T c = 25 o C
Derating Factor
dv/dt( 1 )
T stg
Tj
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
July 1998
28
A
160
A
80
W
0.53
W/ o C
7
V/ns
-65 to 175
o
C
175
o
C
(1) ISD ≤ 40 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/5
STB3015L
THERMAL DATA
R thj-case
R thj-amb
R thc-sink
Tl
o
1.88
62.5
0.5
300
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
C/W
C/W
o
C/W
o
C
o
AVALANCHE CHARACTERISTICS
Symbol
Parameter
I AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T j max)
E AS
Single Pulse Avalanche Energy
(starting T j = 25 o C, I D = I AR , VDD = 15 V)
Max Value
Unit
40
A
200
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V (BR)DSS
I DSS
I GSS
Parameter
Drain-source
Breakdown Voltage
Test Conditions
I D = 250 µA
Zero Gate Voltage
V DS = Max Rating
Drain Current (V GS = 0) V DS = Max Rating
Gate-body Leakage
Current (V DS = 0)
Min.
Typ.
Max.
30
VGS = 0
Unit
V
o
T c = 125 C
V GS = ± 20 V
1
10
µA
µA
± 100
nA
Max.
Unit
2.5
V
0.0155
0.022
Ω
Ω
ON (∗)
Symbol
Parameter
Test Conditions
ID = 250 µA
V GS(th)
Gate Threshold
Voltage
V DS = VGS
R DS(on)
Static Drain-source On
Resistance
V GS = 10 V I D = 20 A
V GS = 5 V I D = 20 A
ID(on)
Min.
Typ.
1
0.013
On State Drain Current V DS > I D(on) x R DS(on)max
V GS = 10 V
40
A
DYNAMIC
Symbol
g fs (∗)
C iss
C oss
C rss
2/5
Parameter
Test Conditions
Forward
Transconductance
V DS > I D(on) x R DS(on)max
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS = 25 V
f = 1 MHz
I D =20 A
V GS = 0
Min.
Typ.
15
20
Max.
Unit
S
2500
1200
400
pF
pF
pF
STB3015L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
t d(on)
tr
Qg
Parameter
Test Conditions
Turn-on Time
Rise Time
V DD = 15 V
R G = 4.7 Ω
Total Gate Charge
V DD = 24 V
Min.
I D = 20 A
V GS = 5 V
I D = 40 A
Typ.
Max.
25
160
V GS = 5 V
Unit
ns
ns
40
nC
Max.
Unit
SWITCHING OFF
Symbol
t r(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V DD = 24 V
R G = 4.7 Ω
Min.
I D = 40 A
V GS = 5 V
Typ.
ns
ns
ns
25
120
155
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
I SD
I SDM (•)
Source-drain Current
Source-drain Current
(pulsed)
V SD (∗)
Forward On Voltage
I SD = 40 A
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD = 40 A
V DD = 20 V
t rr
Q rr
I RRM
Min.
Typ.
VGS = 0
di/dt = 100 A/µs
T j = 150 o C
Max.
Unit
40
160
A
A
1.3
V
50
ns
0.9
nC
3.5
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
3/5
STB3015L
TO-263 (D2PAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.3
4.6
0.169
0.181
A1
2.49
2.69
0.098
0.106
B
0.7
0.93
0.027
0.036
B2
1.25
1.4
0.049
0.055
C
0.45
0.6
0.017
0.023
C2
1.21
1.36
0.047
0.053
D
8.95
9.35
0.352
0.368
E
10
10.28
0.393
0.404
G
4.88
5.28
0.192
0.208
L
15
15.85
0.590
0.624
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
E
A
C2
L2
D
L
L3
B2
B
A1
C
G
P011P6/C
4/5
STB3015L
TO-220 MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
D1
0.107
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
D1
C
D
A
E
L4
H2
G
G1
F1
L2
F2
F
Dia.
L5
L9
L7
L6
L4
P011C
5/5
STB3015L
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 1998 STMicroelectronics – Printed in Italy – All Rights Reserved
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