STD1NB80 N - CHANNEL 800V - 16Ω - 1A - DPAK/IPAK PowerMESH MOSFET PRELIMINARY DATA TYPE V DSS R DS(on) ID STD1NB80 800 V < 20 Ω 1A ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 16 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED ADD SUFFIX "T4" FOR ORDERING IN TAPE&REEL 3 3 1 2 1 DESCRIPTION Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. IPAK TO-251 (Suffix "-1") DPAK TO-252 (Suffix "T4") INTERNAL SCHEMATIC DIAGRAM APPLICATIONS SWITCH MODE POWER SUPPLIES (SMPS) ■ AC ADAPTORS AND BATTERY CHARGERS FOR HANDHELD EQUIPMENT ■ ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS Value Unit Drain-source Voltage (V GS = 0) Parameter 800 V Drain- gate Voltage (R GS = 20 kΩ) 800 V ± 30 V Gate-source Voltage o ID Drain Current (continuous) at T c = 25 C ID Drain Current (continuous) at T c = 100 o C I DM (•) P tot dv/dt( 1 ) Tstg Tj Drain Current (pulsed) o A A 4 A Total Dissipation at T c = 25 C 50 W Derating Factor 0.4 W/ o C Peak Diode Recovery voltage slope 4.5 V/ns Storage Temperature Max. Operating Junction Temperature (•) Pulse width limited by safe operating area May 1999 1 0.63 -65 to 150 o C 150 o C ( 1) ISD ≤ 1Α, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX 1/6 STD1NB80 THERMAL DATA R thj-case Rthj-amb Rthc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-Sink Typ Maximum Lead Temperature For Soldering Purpose 2.5 100 1.5 275 o Max Value Unit 1 A 90 mJ C/W C/W o C/W o C o AVALANCHE CHARACTERISTICS Symbol Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max) E AS Single Pulse Avalanche Energy (starting T j = 25 o C, I D = I AR , V DD = 50 V) ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating IGSS Gate-body Leakage Current (V DS = 0) Typ. Max. 800 V GS = 0 I DSS Min. Unit V T c = 125 o C V GS = ± 30 V 1 50 µA µA ± 100 nA ON (∗) Symbol Parameter Test Conditions V GS(th) Gate Threshold Voltage V DS = V GS I D = 250 µA R DS(on) Static Drain-source On Resistance V GS = 10V I D =0.5 A I D(on) On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V Min. Typ. Max. Unit 3 4 5 V 16 20 Ω 1 A DYNAMIC Symbol g fs (∗) C iss C oss C rss 2/6 Parameter Test Conditions Forward Transconductance V DS > I D(on) x R DS(on)max Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz I D = 0.5 A V GS = 0 Min. Typ. 0.3 0.6 140 22 2.5 Max. Unit S 185 27 4 pF pF pF STD1NB80 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Typ. Max. Unit t d(on) tr Turn-on Time Rise Time Parameter V DD = 400 V R G = 4.7 Ω Test Conditions ID = 0.5A VGS = 10 V Min. 8 10 12 14 ns ns Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 640 V ID =1.1 A V GS = 10 V 10 5 4 14 nC nC nC Typ. Max. Unit 40 15 50 56 21 70 ns ns ns Typ. Max. Unit 1 4 A A SWITCHING OFF Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions Min. V DD = 640 V ID = 1.1 A R G = 4.7 Ω V GS = 10 V SOURCE DRAIN DIODE Symbol ISD I SDM (•) V SD (∗) t rr Q rr I RRM Parameter Test Conditions Min. Source-drain Current Source-drain Current (pulsed) Forward On Voltage I SD = 1 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 1.1 A di/dt = 100 A/µs V DD = 100 V T j = 150 o C V GS = 0 1.6 V 460 ns 1150 nC 5 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area 3/6 STD1NB80 TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch MAX. MIN. A 2.2 TYP. 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 TYP. MAX. 0.85 B5 0.033 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 L2 0.8 0.047 1 0.031 0.039 A1 C2 A3 A C H B B6 = 1 = 2 G = = = E B2 = 3 B5 L D B3 L2 L1 0068771-E 4/6 STD1NB80 TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.9 0.025 0.035 B2 5.2 5.4 0.204 0.212 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 9.35 10.1 0.368 0.397 L2 0.8 L4 0.031 0.6 1 0.023 0.039 A1 C2 A H A2 C DETAIL "A" L2 D = 1 = G 2 = = = = E B2 3 B DETAIL "A" L4 0068772-B 5/6 STD1NB80 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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