STD3PS25 - STD3PS25-1 P-CHANNEL 250V - 2.1Ω - 3A DPAK/IPAK MESH OVERLAY™ MOSFET TYPE STD3PS25 STD3PS25-1 ■ ■ ■ ■ ■ VDSS RDS(on) ID 250 V 250 V < 2.8 Ω < 2.8 Ω 3A 3A TYPICAL RDS(on) = 2.1Ω 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY GATE-SOURCE ZENER DIODE DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for lighting applications. 3 3 2 1 1 DPAK IPAK INTERNAL SCHEMATIC DIAGRAM APPLICATIONS CONSUMER ■ LIGHTING ■ ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS Parameter Value Unit Drain-source Voltage (VGS = 0) 250 V Drain-gate Voltage (RGS = 20 kΩ) 250 V Gate- source Voltage ±25 V ID Drain Current (continuous) at TC = 25°C 3 A ID Drain Current (continuous) at TC = 100°C 1.9 A IDM (1) PTOT Drain Current (pulsed) 12 A Total Dissipation at TC = 25°C 45 W 0.36 W/°C – 50 to 150 °C 150 °C Derating Factor Tstg Tj June 2003 Storage Temperature Max. Operating Junction Temperature 1/10 STD3PS25 - STD3PS25-1 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 2.77 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 100 °C/W Maximum Lead Temperature For Soldering Purpose 275 °C Tl ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Test Conditions Min. Typ. Max. 250 Unit Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 V Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating 1 µA VDS = Max Rating, TC = 125 °C 10 µA Gate-body Leakage Current (VDS = 0) VGS = ± 20 V ±10 µA ON Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(on) Static Drain-source On Resistance VGS = 10 V, ID = 0.3 A Min. Typ. Max. Unit 2 3 4 V 2.1 2.8 Ω Typ. Max. Unit DYNAMIC Symbol 2/10 Parameter Ciss Input Capacitance Coss Test Conditions VDS = 25 V, f = 1 MHz, VGS = 0 Min. 260 pF Output Capacitance 52 pF Crss Reverse Transfer Capacitance 25 pF RG Gate-Input Resistance 6 Ω f = 1 MHz,Gate DC Bias=0 Test Signal Level=20 mV Open Drain STD3PS25 - STD3PS25-1 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 125V, ID = 1.5A RG = 4.7Ω VGS = 10V (Resistive, see Figure 3) 12 22 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 200V, ID= 1.5A, VGS = 10V 16 1.4 7.6 21 nC nC nC Typ. Max. Unit SWITCHING OFF Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions Min. VDD = 200V, ID = 1.5A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) 29.5 7 ns ns SOURCE DRAIN DIODE Symbol Parameter ISD ISDM (4) Source-drain Current Source-drain Current (pulsed) VSD (5) Forward On Voltage ISD = 3A, VGS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Curren ISD = 0.60A, di/dt = 100A/µs, VDD = 40V, Tj = 150°C (see test circuit, Figure 5) trr Qrr IRRM Test Conditions Min. Typ. Max. Unit 3 12 A A 1.5 V 143 806 11 ns nC A GATE-SOURCE ZENER DIODE Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Conditions Igs=± 500 µA (Open Drain) Min. ± 25 Typ. Max. Unit V (4) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (5) Pulse width limited by safe operating area PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 3/10 STD3PS25 - STD3PS25-1 Safe Operating Area p-ch Thermal Impedance for Complementary pair Output Characteristics p-ch Transfer Characteristics p-ch Transconductance p-ch 4/10 Static Drain-source On Resistance p-ch STD3PS25 - STD3PS25-1 Gate Charge vs Gate-source Voltage p-ch Capacitance Variations p-ch Norm. Gate Thereshold Voltage vs Temp p-ch NormalizedOnResistancevsTemperaturep-ch Source-drainDiodeForwardCharacteristicsp-ch Normalized BVDSS vs Temperature p-ch 5/10 STD3PS25 - STD3PS25-1 Fig. 1: Switching Times Test Circuit For Resistive Load Fig. 3: Test Circuit For Diode Recovery Behaviour 6/10 Fig. 2: Gate Charge test Circuit STD3PS25 - STD3PS25-1 TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. A 2.20 2.40 0.087 TYP. MAX. 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L2 0.8 0.031 L4 0.60 1.00 0.024 0.039 V2 0o 8o 0o 0o P032P_B 7/10 STD3PS25 - STD3PS25-1 TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 B5 0.033 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 L2 0.8 0.047 1 0.031 0.039 A1 C2 A3 A C H B B6 = 1 = 2 G = = = E B2 = 3 B5 L D B3 L2 L1 0068771-E 8/10 STD3PS25 - STD3PS25-1 DPAK FOOTPRINT TUBE SHIPMENT (no suffix)* All dimensions are in millimeters All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A DIM. mm MIN. inch MAX. MIN. 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 12.1 0.476 1.6 0.059 0.063 D 1.5 D1 1.5 E 1.65 1.85 0.065 0.073 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 16.3 1.574 0.618 R 40 W 15.7 MIN. B 1.5 C 12.8 D 20.2 G 16.4 N 50 MAX. 12.992 0.059 13.2 0.504 0.520 0.795 18.4 0.645 0.724 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 MAX. A0 B1 MAX. 330 T TAPE MECHANICAL DATA inch 0.059 0.641 * on sales type 9/10 STD3PS25 - STD3PS25-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com 10/10