STY30NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STY30NA50 ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS(on) ID 500 V < 0.175 Ω 30 A TYPICAL RDS(on) = 0.15 Ω EFFICIENT AND RELIABLE MOUNTING THROUGH CLIP ± 30V GATE TO SOURCE VOLTAGE RATING REPETITIVE AVALANCHE TESTED LOW INTRINSIC CAPACITANCE 100% AVALANCHE TESTED GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD Max247TM DESCRIPTION TM T he Max247 package is a new high volume power package exibiting the same footprint as the industry standard T O-247, but designed to accomodate much larger silicon chips, normally supplied in bigger packages such as TO -264. The increased die capacity makes the device ideal to reduce component count in multiple paralleled designs and save board space with respect to larger packages. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS) ■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES (UPS) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t V DS Drain-source Voltage (V GS = 0) 500 V VDGR Drain- gate Voltage (R GS = 20 kΩ) 500 V V GS Gate-source Voltage ± 30 V ID Drain Current (continuous) at T c = 25 C 30 A ID o Drain Current (continuous) at T c = 100 C 19 A Drain Current (pulsed) 120 A I DM (•) P t ot T stg Tj o o Total Dissipation at T c = 25 C 300 W Derating Factor 2.4 W/ o C St orage Temperature Max. Operating Junction Temperature -55 to 150 o C 150 o C (•) Pulse width limited by safe operating area March 1996 1/4 STY30NA50 THERMAL DATA R t hj-ca se R t hj- amb R thc- si nk Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-Heatsink with Conductive Grease Max Max Typ o 0.42 40 0.05 o C/W C/W AVALANCHE CHARACTERISTICS Symb ol Parameter Max Valu e Unit 30 A Single Pulse Avalanche Energy o (starting Tj = 25 C, ID = I AR , V DD = 50 V) 3000 mJ E AR Repetitive Avalanche Energy (pulse width limited by Tj max, δ < 1%) 180 mJ I AR Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by Tj max, δ < 1%) 19 A I AR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ < 1%) E AS ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symb ol V (BR)DSS Parameter Drain-source Breakdown Voltage Test Cond ition s I D = 250 µA Min. VGS = 0 Typ . Max. 500 Un it V I DSS V DS = Max Rating Zero Gate Voltage o Drain Current (V GS = 0) V DS = Max Rating x 0.8 T c = 125 C 200 1000 µA µA I GSS Gate-body Leakage Current (V DS = 0) V GS = ± 30 V ± 100 nA Max. Un it ON (∗) Symb ol Parameter Test Cond ition s ID = 250 µA V GS(th) Gate T hreshold Voltage V DS = VGS R DS( on) Static Drain-source On Resistance V GS = 10 V ID = 15 A V GS = 10 V ID = 15 A On State Drain Current V DS > I D(on) x R DS(on) max V GS = 10 V ID(o n) Min. 2.25 o Typ . 3 3.75 V 0.15 0.175 0.35 Ω Ω T c = 100 C 30 A DYNAMIC Symb ol g fs (∗) C iss C oss C rss 2/4 Parameter Test Cond ition s Forward Transconductance V DS > I D(on) x R DS(on) max Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz Min. I D = 15 A VGS = 0 Typ . Max. 25 Un it S 6150 780 220 8000 1000 290 pF pF pF STY30NA50 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symb ol t d(on) tr (di/dt) on Qg Q gs Q gd Parameter Test Cond ition s Turn-on T ime Rise Time V DD = 250 V R G = 4.7 Ω Turn-on Current Slope V DD = 400 V R G = 47 Ω Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 400 V Min. ID = 15 A VGS = 10 V I D = 30 A Typ . Max. Un it 40 70 55 90 ns ns ID = 30 A VGS = 10 V 240 A/µs VGS = 10 V 245 27 120 320 nC nC nC Typ . Max. Un it 75 30 110 100 40 145 ns ns ns Typ . Max. Un it 30 120 A A 1.6 V SWITCHING OFF Symb ol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall T ime Cross-over T ime Test Cond ition s V DD = 400 V R G = 4.7 Ω Min. I D = 30 A V GS = 10 V SOURCE DRAIN DIODE Symb ol Parameter Test Cond ition s I SD I SDM (•) Source-drain Current Source-drain Current (pulsed) V SD (∗) Forward O n Voltage I SD = 30 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 30 A V DD = 100 V t rr Q rr I RRM Min. V GS = 0 di/dt = 100 A/µs o T j = 150 C 800 ns 17.6 µC 44 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area 3/4 STY30NA50 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4