STMICROELECTRONICS STF2NK60Z

STF2NK60Z - STQ2NK60ZR-AP
STP2NK60Z - STD2NK60Z-1
N-CHANNEL 600V - 7.2Ω - 1.4A TO-220/TO-220FP/TO-92/IPAK
Zener-Protected SuperMESH™ MOSFET
Table 1: General Features
TYPE
VDSS
STF2NK60Z
STQ2NK60ZR-AP
STP2NK60Z
STD2NK60Z-1
600 V
600 V
600 V
600 V
■
■
■
■
■
■
Figure 1: Package
RDS(on)
<
<
<
<
8Ω
8Ω
8Ω
8Ω
ID
1.4
0.4
1.4
1.4
Pw
A
A
A
A
20
3W
45 W
45 W
TYPICAL RDS(on) = 7.2 Ω
EXTREMELY HIGH dv/dt CAPABILITY
ESD IMPROVED CAPABILITY
100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED
3
1
TO-92 (Ammopack)
TO-220
3
2
1
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt capability
for the most demanding applications. Such series
complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
2
3
1
IPAK
2
TO-220FP
Figure 2: Internal Schematic Diagram
APPLICATIONS
■ LOW POWER BATTERY CHARGERS
■ SWITH MODE LOW POWER
SUPPLIES(SMPS)
■ LOW POWER, BALLAST, CFL (COMPACT
FLUORESCENT LAMPS)
Table 2: Order Codes
Part Number
Marking
Package
Packaging
STQ2NK60ZR-AP
Q2NK60ZR
TO-92
AMMOPAK
STP2NK60Z
P2NK60Z
TO-220
TUBE
STD2NK60Z-1
D2NK60Z
IPAK
TUBE
STF2NK60Z
F2NK60Z
TO-220FP
TUBE
Rev. 5
September 2005
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STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1
Table 3: Absolute Maximum ratings
Symbol
Parameter
Value
TO-220 /
IPAK
VDS
VDGR
VGS
TO-92
Unit
TO-220FP
Drain-source Voltage (VGS = 0)
600
V
Drain-gate Voltage (RGS = 20 kΩ)
600
V
Gate- source Voltage
± 30
V
ID
Drain Current (continuous) at TC = 25°C
1.4
0.4
1.4 (*)
A
ID
Drain Current (continuous) at TC = 100°C
0.77
0.25
0.77 (*)
A
IDM ()
Drain Current (pulsed)
5.6
1.6
5.6 (*)
A
PTOT
Total Dissipation at TC = 25°C
Derating Factor
VESD(G-S)
VISO
dv/dt (1)
Tj
Tstg
45
3
20
W
0.36
0.025
0.16
W/°C
Gate source ESD (HBM-C= 100pF, R=1.5kΩ)
1500
Insulation Withstand Voltage (DC)
V
2500
Peak Diode Recovery voltage slope
Operating Junction Temperature
Storage Temperature
V
4.5
V/ns
-55 to 150
°C
() Pulse width limited by safe operating area
(1) ISD ≤ 1.4A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, T j ≤ T JMAX.
(*) Limited only by maximum temperature allowed
Table 4: Thermal Data
TO-220/IPAK
TO-220FP
TO-92
Unit
Rthj-case
Thermal Resistance Junction-case Max
2.77
6.25
--
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
100
100
120
°C/W
Rthj-lead
Thermal Resistance Junction-lead Max
--
--
40
°C/W
260
°C
Tl
Maximum Lead Temperature For Soldering
Purpose
300
Table 5: Avalanche Characteristics
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
1.4
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
90
mJ
Table 6: Gate-Source Zener Diode
Symbol
Parameter
Test Conditions
Min.
BVGSO
Gate source
Breakdown Voltage
Igs= ± 1 mA (Open Drain)
30
Typ.
Max.
Unit
V
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
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STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 7: On/Off
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
600
Unit
Drain-source
Breakdown Voltage
ID = 1mA, VGS = 0
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
50
µA
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
±10
µA
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 50 µA
3.75
4.5
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 0.7 A
7.2
8
Ω
Typ.
Max.
Unit
V(BR)DSS
3
V
Table 8: Dynamic
Symbol
gfs (1)
Ciss
Coss
Crss
Coss eq. (3)
Parameter
Test Conditions
Forward Transconductance
VDS = 15 V, ID= 0.7 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
Min.
1
S
170
27
5
pF
pF
pF
Equivalent Output Capacitance VGS = 0V, VDS = 0V to 480V
30
pF
td(on)
tr
td(off)
tr
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VDD = 300 V, ID = 0.65 A,
RG= 4.7 Ω, VGS = 10 V
(Resistive Load see, Figure
22)
8
30
22
55
ns
ns
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 480V, ID = 1.5 A,
VGS = 10V
(see, Figure 24)
7.7
1.7
4
10
nC
nC
nC
Typ.
Max.
Unit
1.5
6
A
A
1.6
V
Table 9: Source Drain Diode
Symbol
Parameter
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
VSD (1)
Forward On Voltage
ISD = 1.5 A, VGS = 0
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 1.3 A, di/dt = 100 A/µs
VDD = 25V, Tj = 25°C
(see test circuit, Figure 23)
250
550
4.4
ns
µC
A
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 1.3 A, di/dt = 100 A/µs
VDD = 25V, Tj = 150°C
(see test circuit, Figure 23)
300
690
4.6
ns
µC
A
trr
Qrr
IRRM
trr
Qrr
IRRM
Test Conditions
Min.
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
(3) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS
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STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1
Figure 3: .Safe Operating Area For TO-220
Figure 6: Thermal Impedance For TO-220
Figure 4: Safe Operating Area For IPAK
Figure 7: Thermal Impedance For IPAK
Figure 5: Safe Operating Area For TO-92
Figure 8: Thermal Impedance For TO-92
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STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1
Figure 9: Safe Operating Area For TO-220FP
Figure 12: Thermal Impedance For TO-220FP
Figure 10: Output Characteristics
Figure 13: Transfer Characteristics
Figure 11: Transconductance
Figure 14: Gate Charge vs Gate-source Voltage
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STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1
Figure 15: Static Drain-source On Resistance
Figure 18: Source-Drain Forward Characteristics
Figure 16: Capacitance Variations
Figure 19: Maximum Avalanche Energy vs
Temperature
Figure 17: Normalized Gate Thereshold Voltage vs Temperature
Figure 20: Normalized On Resistance vs Temperature
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STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1
Figure 21: Normalized BVDSS vs Temperature
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STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1
Figure 22: Switching Times Test Circuit For
Resistive Load
Figure 23: Test Circuit For Inductive Load
Switching and Diode Recovery Times
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Figure 24: Gate Charge Test Circuit
STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These
packages have a Lead-free second level interconnect . The category of second level interconnect is
marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The
maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an
ST trademark. ECOPACK specifications are available at: www.st.com
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STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1
TO-220 MECHANICAL DATA
DIM.
mm.
MIN.
inch
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
b
0.61
0.88
0.024
0.034
b1
1.15
1.70
0.045
0.066
c
0.49
0.70
0.019
0.027
D
15.25
15.75
0.60
0.620
E
10
10.40
0.393
0.409
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
F
1.23
1.32
0.048
0.052
H1
6.20
6.60
0.244
0.256
J1
2.40
2.72
0.094
0.107
0.551
L
13
14
0.511
L1
3.50
3.93
0.137
L20
16.40
L30
10/16
TYP
0.154
0.645
28.90
1.137
øP
3.75
3.85
0.147
0.151
Q
2.65
2.95
0.104
0.116
STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1
TO-92 AMMOPACK
DIM.
mm.
MIN.
TYP
inch
MAX.
MIN.
TYP.
MAX.
A1
4.45
4.95
0.170
0.194
T
3.30
3.94
0.130
0.155
T1
1.6
T2
0.06
2.3
d
0.41
P0
12.5
12.7
0.09
0.56
0.016
0.022
12.9
0.49
0.5
0.51
P2
5.65
6.35
7.05
0.22
0.25
0.27
F1, F2
2.44
2.54
2.94
0.09
0.1
0.11
delta H
-2
2
-0.08
W
17.5
18
19
0.69
0.71
0.74
W0
5.7
6
6.3
0.22
0.23
0.24
W1
8.5
9
9.25
0.33
0.35
W2
0.5
H
18.5
H0
15.5
16
H1
D0
0.08
20.5
0.72
16.5
0.61
0.80
0.63
25
3.8
t
4
4.2
L
0.15
delta P
-1
0.157
0.16
0.035
11
3
0.65
0.98
0.9
l1
0.36
0.02
0.43
0.11
1
-0.04
0.04
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STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1
TO-251 (IPAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
2.2
2.4
0.086
0.094
A1
0.9
1.1
0.035
0.043
A3
0.7
1.3
0.027
0.051
B
0.64
0.9
0.025
0.031
B2
5.2
5.4
0.204
0.212
B3
0.85
B5
0.033
0.3
0.012
B6
0.95
C
0.45
C2
0.48
D
6
E
6.4
6.6
0.037
0.6
0.017
0.023
0.6
0.019
0.023
6.2
0.236
0.244
0.252
0.260
G
4.4
4.6
0.173
0.181
H
15.9
16.3
0.626
0.641
L
9
9.4
0.354
0.370
L1
0.8
1.2
0.031
0.047
L2
0.8
1
0.031
0.039
A1
C2
A3
A
C
H
B
B3
=
1
=
2
G
=
=
=
E
B2
=
3
B5
L
D
B6
L2
L1
0068771-E
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STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1
TO-92 MECHANICAL DATA
mm.
inch
DIM.
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.32
4.95
0.170
0.194
0.020
b
0.36
0.51
0.014
D
4.45
4.95
0.175
0.194
E
3.30
3.94
0.130
0.155
e
2.41
2.67
0.094
0.105
e1
1.14
1.40
0.044
0.055
L
12.70
15.49
0.50
0.610
R
2.16
2.41
0.085
0.094
S1
0.92
1.52
0.036
0.060
W
0.41
0.56
0.016
0.022
V
5°
5°
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STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1
TO-220FP MECHANICAL DATA
mm.
DIM.
MIN.
A
4.4
inch
TYP
MAX.
MIN.
TYP.
4.6
0.173
0.181
MAX.
0.106
B
2.5
2.7
0.098
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
L3
28.6
30.6
1.126
1.204
L4
9.8
10.6
.0385
0.417
L5
2.9
3.6
0.114
0.141
L6
15.9
16.4
0.626
0.645
9
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
B
D
A
E
L7
L3
L6
F2
H
G
G1
F
F1
L7
L2
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L5
1 2 3
L4
STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1
Table 10: Revision History
Date
Revision
Description of Changes
07-Jul-2004
3
The document change from “TARGET” to “COMPLETE”
11/Nov/2004
05-Sep-2005
4
5
New stylesheet
Added TO-220FP
Inserted Ecopack indication
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STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2005 STMicroelectronics - All Rights Reserved
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