STMICROELECTRONICS STP10NK60Z/FP

STB10NK60Z/-1 - STP10NK60Z/FP
STW10NK60Z
N-CHANNEL 600V-0.65Ω-10A - TO220/FP-D²/I²PAK-TO-247
Zener-Protected SuperMESH™ MOSFET
General features
Type
STB10NK60Z
STB10NK60Z-1
STP10NK60ZFP
STP10NK60Z
STW10NK60Z
Package
VDSS
RDS(on)
ID
Pw
600
600
600
600
600
<0.75 Ω
<0.75 Ω
<0.75 Ω
<0.75 Ω
<0.75 Ω
10 A
10 A
10 A
10 A
10 A
115
115
35
115
156
V
V
V
V
V
■
TYPICAL RDS(on) = 0.65 Ω
■
EXTREMELY HIGH dv/dt CAPABILITY
■
100% AVALANCHE TESTED
■
GATE CHARGE MINIMIZED
■
VERY LOW INTRINSIC CAPACITANCES
■
VERY GOOD MANUFACTURING
REPEABILITY
3
1
TO-220
2
3
1
2
3
2
1
TO-220FP
TO-247
3
1
D²PAK
3
12
I²PAK
Internal schematic diagram
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage
MOSFETs
including
revolutionary
MDmesh™ products.
Applications
■
HIGH CURRENT, HIGH SPEED SWITCHING
■
IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTOR AND PFC
■
LIGHTING
July 2005
Rev 1
1/19
www.st.com
19
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
1 Absolute maximum ratings
1
Absolute maximum ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220/D²/I²PAK TO-220FP
VDS
VDGR
VGS
TO-247
Drain-Source Voltage (VGS = 0)
600
V
Drain-gate Voltage (RGS = 20kΩ)
600
V
Gate-Source Voltage
± 30
V
ID
Drain Current (continuous) at TC = 25°C
10
10
(Note 3)
10
A
ID
Drain Current (continuous) at TC = 100°C
5.7
5.7
(Note 3)
5.7
A
Drain Current (pulsed)
36
36
(Note 3)
36
A
Total Dissipation at TC = 25°C
115
35
156
W
Derating Factor
0.92
0.28
1.25
W/°C
IDM
Note 2
PTOT
Vesd(G-S)
G-S ESD (HBM C=100pF, R=1.5kΩ)
4000
V
dv/dt
Note 1
Peak Diode Recovery voltage slope
4.5
V/ns
VISO
Insulation Withstand Volatge (DC)
Tj
Tstg
Table 2.
--
Operating Junction Temperature
Storage Temperature
2500
-55 to 150
I²PAK
D²PAK
Rthj-case
Thermal Resistance Junction-case Max
Rthj-pcb
Thermal Resistance Junction-pcb Max
(when mounted on minimum Footprint)
60
Rthj-amb
Thermal Resistance Junction-amb Max
62.5
2/19
V
°C
Thermal data
TO-220
Tl
--
Maximum Lead Temperature For Soldering
Purpose
TO-220FP TO-247
1.09
3.6
0.8
Unit
°C/W
°C/W
50
300
°C/W
°C
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
Table 3.
1 Absolute maximum ratings
Avalanche characteristics
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, repetitive or
Not-Repetitive (pulse width limited by Tj max)
9
A
EAS
Single Pulse Avalanche Energy
(starting Tj=25°C, ID=IAR, VDD = 50V)
300
mJ
EAR
Repetitive Avalanche Energy
(pulse width limited by Tj max)
3.5
mJ
Table 4.
Gate-source zener diode
Symbol
BVGSO
1.1
Parameter
Gate-Source
Breakdown Voltage
Test Conditions
Igs=±1mA
(Open Drain)
Min.
Typ.
Max.
30
Unit
V
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER
DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the
device’s ESD capability, but also to make them safely absorb possible voltage transients that
may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
3/19
2 Electrical characteristics
2
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 5.
On/Off
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-Source Breakdown
Voltage
ID = 250µA, V GS= 0
IDSS
Zero Gate Voltage Drain
Current (VGS = 0)
VDS = Max Rating,
1
50
µA
IGSS
Gate Body Leakage Current
(VDS = 0)
VGS = ±15V, VDS = 0
±10
µA
VGS(th)
Gate Threshold Voltage
VDS= VGS, ID = 250 µA
3.75
4.5
V
RDS(on)
Static Drain-Source On
Resistance
VGS= 10 V, ID= 20 A
0.65
0.75
Ω
Typ.
Max.
Unit
Table 6.
Symbol
gfs Note 4
Ciss
Coss
Crss
Coss eq.
Note 5
Qg
Qgs
Qgd
Table 7.
Symbol
td(on)
tr
td(off)
tf
tr(Voff)
tf
tc
4/19
600
3
V
Dynamic
Parameter
Forward Transconductance
Test Conditions
Min.
VDS =15V, ID = 4.5A
Input Capacitance
VDS =25V, f=1 MHz, V GS=0
Output Capacitance
Reverse Transfer Capacitance
Equivalent Ouput Capacitance VGS=0, VDS =0V to 480V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD=480V, ID = 8A
VGS =10V
(see Figure 19)
7.8
S
1370
156
37
pF
pF
pF
90
pF
50
10
25
70
nC
nC
nC
Typ.
Max.
Unit
Switching on/off
Parameter
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD=300 V, ID=4A,
RG=4.7Ω, VGS=10V
(see Figure 20)
VDD=300 V, ID=4A,
RG=4.7Ω, VGS=10V
(see Figure 20)
VDD=480 V, ID=8A,
RG=4.7Ω, VGS=10V
(see Figure 20)
Min.
20
20
ns
ns
55
30
ns
ns
18
18
36
ns
ns
ns
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
Table 8.
Source drain diode
Symbol
Parameter
ISD
ISDMNote 2
Source-drain Current
Source-drain Current (pulsed)
VSDNote 4
Forward on Voltage
ISD=10A, V GS=0
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD=8A, di/dt = 100A/µs,
VDD=40 V, Tj=150°C
trr
Qrr
IRRM
2 Electrical characteristics
Test Conditions
Min.
Typ.
570
4.3
15
Max.
Unit
10
36
A
A
1.6
V
ns
µC
A
(1) ISD ≤10A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS , Tj ≤ TJMAX
(2) Pulse width limited by safe operating area
(3) Limited only by maximum temperature allowed
(4) Pulsed: pulse duration = 300µs, duty cycle 1.5%
(5) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
to 80%
5/19
2 Electrical characteristics
2.1
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
Typical characteristics
Figure 1.
Safe Operating Area for
TO-220/D²/I²PAK
Figure 2.
Thermal Impedanc for
TO-220/D²/I²PAK
Figure 3.
Safe Operating Area for TO-220FP
Figure 4.
Thermal Impedance for TO-220FP
Figure 5.
Safe Operating Area for TO-247
Figure 6.
Thermal Impedance for TO-247
6/19
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
2 Electrical characteristics
Figure 7.
Output Characteristics
Figure 8.
Figure 9.
Transconductance
Figure 10. Static Drain-Source on Resistance
Figure 11. Gate Charge vs Gate -Source
Voltage
Transfer Characteristics
Figure 12. Capacitance Variations
7/19
2 Electrical characteristics
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
Figure 13. Normalized Gate Threshold Voltage Figure 14. Normalized on Resistance vs
vs Temperatute
Temperature
Figure 15. Source-drain Diode Forward
Characteristics
Figure 17. Maximum Avalanche Energy vs
Temperature
8/19
Figure 16. Normalized BVDSS vs Temperature
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
3
3 Test circuits
Test circuits
Figure 18. Switching Times Test Circuit For
Resistive Load
Figure 19. Gate Charge Test Circuit
Figure 20. Test Circuit For Indictive Load
Switching and Diode Recovery
Times
9/19
4 Package mechanical data
4
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in compliance
with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also
marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are
available at: www.st.com
10/19
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
4 Package mechanical data
TO-220FP MECHANICAL DATA
mm.
DIM.
MIN.
A
4.4
inch
TYP
MAX.
MIN.
TYP.
4.6
0.173
0.181
MAX.
0.106
B
2.5
2.7
0.098
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
L3
28.6
30.6
1.126
1.204
L4
9.8
10.6
.0385
0.417
L5
2.9
3.6
0.114
0.141
L6
15.9
16.4
0.626
0.645
9
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
B
D
A
E
L7
L3
L6
F2
H
G
G1
F
F1
L7
L2
L5
1 2 3
L4
11/19
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
4 Package mechanical data
TO-220 MECHANICAL DATA
DIM.
mm.
MIN.
inch
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
b
0.61
0.88
0.024
0.034
b1
1.15
1.70
0.045
0.066
c
0.49
0.70
0.019
0.027
D
15.25
15.75
0.60
0.620
E
10
10.40
0.393
0.409
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
F
1.23
1.32
0.048
0.052
H1
6.20
6.60
0.244
0.256
J1
2.40
2.72
0.094
0.107
0.551
L
13
14
0.511
L1
3.50
3.93
0.137
L20
16.40
L30
12/19
TYP
0.154
0.645
28.90
1.137
øP
3.75
3.85
0.147
0.151
Q
2.65
2.95
0.104
0.116
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
4 Package mechanical data
D2PAK MECHANICAL DATA
TO-247 MECHANICAL DATA
mm.
inch
DIM.
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
0.368
10.4
0.393
D1
E
8
10
E1
0.315
8.5
0.334
G
4.88
5.28
0.192
0.208
L
15
15.85
0.590
0.625
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
M
2.4
3.2
0.094
R
0º
0.126
0.015
4º
3
V2
0.4
1
13/19
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
4 Package mechanical data
TO-262 (I2PAK) MECHANICAL DATA
mm.
inch
DIM.
MIN.
14/19
MAX.
MIN.
A
4.40
TYP
4.60
0.173
TYP.
MAX.
A1
2.40
2.72
0.094
0.107
b
0.61
0.88
0.024
0.034
b1
1.14
1.70
0.044
0.066
0.181
c
0.49
0.70
0.019
0.027
c2
1.23
1.32
0.048
0.052
D
8.95
9.35
0.352
0.368
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
E
10
10.40
0.393
0.410
L
13
14
0.511
0.551
L1
3.50
3.93
0.137
0.154
L2
1.27
1.40
0.050
0.055
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
4 Package mechanical data
TO-247 MECHANICAL DATA
DIM.
mm.
MIN.
TYP
inch
MAX.
MIN.
TYP.
MAX.
A
4.85
5.15
0.19
0.20
A1
2.20
2.60
0.086
0.102
b
1.0
1.40
0.039
0.055
b1
2.0
2.40
0.079
0.094
0.134
b2
3.0
3.40
0.118
c
0.40
0.80
0.015
0.03
D
19.85
20.15
0.781
0.793
E
15.45
15.75
0.608
e
5.45
L
14.20
14.80
0.560
L1
3.70
4.30
0.14
L2
0.620
0.214
18.50
0.582
0.17
0.728
øP
3.55
3.65
0.140
0.143
øR
4.50
5.50
0.177
0.216
S
5.50
0.216
15/19
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
5 Packing mechanical data
5
Packing mechanical data
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
B
1.5
C
12.8
D
20.2
G
24.4
N
100
T
TAPE MECHANICAL DATA
DIM.
mm
MIN.
MAX.
MIN.
A0
10.5
10.7
0.413 0.421
B0
15.7
15.9
0.618 0.626
D
1.5
1.6
0.059 0.063
D1
1.59
1.61
0.062 0.063
E
1.65
1.85
0.065 0.073
F
11.4
11.6
0.449 0.456
MAX.
K0
4.8
5.0
0.189 0.197
P0
3.9
4.1
0.153 0.161
P1
11.9
12.1
0.468 0.476
P2
1.9
2.1
0.075 0.082
R
50
1.574
T
0.25
0.35 0.0098 0.0137
W
23.7
24.3
* on sales type
16/19
inch
0.933 0.956
inch
MAX.
MIN.
MAX.
330
12.992
13.2
0.504 0.520
26.4
0.960 1.039
0.059
0795
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
1000
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
6
6 Order codes
Order codes
Sales Type
Marking
Package
Packaging
STB10NK60Z-1
B10NK60Z-1
I²PAK
TUBE
STB10NK60ZT4
B10NK60Z
D²PAK
TAPE & REEL
STP10NK60ZFP
P10NK60ZFP
TO-220FP
TUBE
STP10NK60Z
P10NK60Z
TO-220
TUBE
STW10NK60Z
W10NK60Z
TO-247
TUBE
17/19
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
7 Revision History
7
18/19
Revision History
Date
Revision
26-Jul-2005
2
Changes
Inserted Ecopack indication
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
7 Revision History
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by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
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19/19