STMICROELECTRONICS STP5NK50ZFP

STB5NK50Z/-1 - STD5NK50Z/-1
STP5NK50Z - STP5NK50ZFP
N-CHANNEL 500V - 1.22Ω - 4.4A TO-220/FP-D/IPAK-D2/I2PAK
Zener-Protected SuperMESH™MOSFET
Figure 1: Package
Table 1: General Features
TYPE
STB5NK50Z
STB5NK50Z-1
STD5NK50Z
STD5NK50Z-1
STP5K50Z
STP5K50ZFP
■
■
■
■
■
■
■
VDSS
RDS(on)
ID
Pw
500
500
500
500
500
500
< 1.5 Ω
< 1.5 Ω
< 1.5 Ω
< 1.5 Ω
< 1.5 Ω
< 1.5 Ω
4.4 A
4.4 A
4.4 A
4.4 A
4.4 A
4.4 A
70 W
70 W
70 W
70 W
70 W
25 W
V
V
V
V
V
V
TYPICAL RDS(on) = 1.22 Ω
EXTREMELY HIGH dv/dt CAPABILITY
IMPROVED ESD CAPABILITY
100% AVALANCHE RATED
GATE CHARGE MINIMIZED
VERY LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURING
REPEATIBILITY
3
12
3
1
I2PAK
TO-220
3
TO-220FP
3
3
2
1
1
1
DPAK
2
IPAK
D2PAK
Figure 2: Internal Schematic Diagram
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
stripbased PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt capability
for the most demanding applications. Such series
complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
■ LIGHTING
Table 2: Order Codes
SALES TYPE
MARKING
PACKAGE
PACKAGING
STB5NK50ZT4
B5NK50Z
D2PAK
TAPE & REEL
STB5NK50Z-1
B5NK50Z
I2PAK
TUBE
STD5NK50ZT4
D5NK50Z
DPAK
TAPE & REEL
STD5NK50Z-1
D5NK50Z
IPAK
TUBE
STP5NK50Z
P5NK50Z
TO-220
TUBE
STP5NK50ZFP
P5NK50ZFP
TO-220FP
TUBE
Rev. 2
September 2005
1/17
STB5NK50Z/-1 - STD5NK50Z/-1 - STP5NK50Z - STP5NK50ZFP
Table 3: Absolute Maximum ratings
Symbol
Parameter
Value
STP5NK50Z
STB5NK50Z/-1
VDS
VDGR
VGS
Unit
STP5NK50ZFP
STD5NK50Z
STD5NK50Z-1
Drain-source Voltage (VGS = 0)
500
V
Drain-gate Voltage (RGS = 20 kΩ)
500
V
Gate- source Voltage
± 30
V
ID
Drain Current (continuous) at TC = 25°C
4.4
4.4 (*)
4.4
A
ID
Drain Current (continuous) at TC = 100°C
2.7
2.7 (*)
2.7
A
17.6
17.6 (*)
17.6
A
70
25
70
W
0.2
0.56
W/°C
IDM ()
PTOT
Drain Current (pulsed)
Total Dissipation at TC = 25°C
Derating Factor
VESD(G-S)
dv/dt (1)
0.56
Gate source ESD(HBM-C=100pF, R=1.5KΩ)
3000
V
4.5
V/ns
Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tj
Tstg
Operating Junction Temperature
Storage Temperature
-
2500
-
V
-55 to 150
-55 to 150
°C
°C
( ) Pulse width limited by safe operating area
(1) ISD ≤4.4A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed
Table 4: Thermal Data
TO-220
I2PAK/D2PAK
TO-220FP
DPAK
1.78
5
1.78
Rthj-case
Thermal Resistance Junction-case Max
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
°C/W
Maximum Lead Temperature For Soldering Purpose
300
°C
Tl
°C/W
Table 5: Avalanche Characteristics
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
4.4
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
130
mJ
Table 6: Gate-Source Zener Diode
Symbol
BVGSO
Parameter
Gate-Source Breakdown
Voltage
Test Conditions
Igs=± 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/17
STB5NK50Z/-1 - STD5NK50Z/-1 - STP5NK50Z - STP5NK50ZFP
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 7: On /Off
Symbol
Parameter
Test Conditions
V(BR)DSS
Drain-source Breakdown
Voltage
ID = 1 mA, VGS = 0
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125°C
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 50 µA
RDS(on
Static Drain-source On
Resistance
VGS = 10 V, ID = 2.2 A
Min.
Typ.
Max.
500
3
Unit
V
1
50
µA
µA
± 10
µA
3.75
4.5
V
1.22
1.5
Ω
Typ.
Max.
Unit
Table 8: Dynamic
Symbol
gfs (1)
Parameter
Test Conditions
Min.
Forward Transconductance VDS = 15 V , ID = 2.2 A
3.1
S
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V, f = 1 MHz, VGS = 0
535
75
17
pF
pF
pF
Equivalent Output
Capacitance
VGS = 0 V, VDS = 0 to 400 V
45
pF
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off-Delay Time
Fall Time
VDD = 250 V, ID = 2.2 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 19)
15
10
32
15
ns
ns
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 400 V, ID = 4.4 A,
VGS = 10 V
(see Figure 22)
20
4
10
28
nC
nC
nC
Typ.
Max.
Unit
4.4
17.6
A
A
1.6
V
Ciss
Coss
Crss
COSS eq (3).
Table 9: Source Drain Diode
Symbol
Parameter
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
VSD (1)
Forward On Voltage
ISD = 4.4 A, VGS = 0
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 4.4 A, di/dt = 100 A/µs
VDD = 30V, Tj = 150°C
(see Figure 20)
trr
Qrr
IRRM
Test Conditions
Min.
310
1425
9.2
ns
nC
A
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
(3) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.
3/17
STB5NK50Z/-1 - STD5NK50Z/-1 - STP5NK50Z - STP5NK50ZFP
Figure 3: Safe Operating Area For DPAK/IPAK/
D2PAK/I2PAK/TO-220
Figure 6: Safe Operating Area For TO-220FP
Figure 4: Thermal Impedance For DPAK/IPAK/
D2PAK/I2PAK/TO-220
Figure 7: Thermal Impedance For TO-220FP
Figure 5: Output Characteristics
Figure 8: Transfer Characteristics
4/17
STB5NK50Z/-1 - STD5NK50Z/-1 - STP5NK50Z - STP5NK50ZFP
Figure 9: Transconductance
Figure 12: Static Drain-Source On Resistance
Figure 10: Gate Charge vs Gate-source Voltage
Figure 13: Capacitance Variations
Figure 11: Normalized Gate Threshold Voltage
vs Temperature
Figure 14: Normalized On Resistance vs Temperature
5/17
STB5NK50Z/-1 - STD5NK50Z/-1 - STP5NK50Z - STP5NK50ZFP
Figure 15: Source-Drain Forward Characteristics
Figure 16: Maximum Avalanche Energy vs
Temperature
6/17
Figure 17: Normalized BVDSS vs Temperature
STB5NK50Z/-1 - STD5NK50Z/-1 - STP5NK50Z - STP5NK50ZFP
Figure 18: Unclamped Inductive Load Test Circuit
Figure 21: Unclamped Inductive Wafeform
Figure 19: Switching Times Test Circuit For
Resistive Load
Figure 22: Gate Charge Test Circuit
Figure 20: Test Circuit For Inductive Load
Switching and Diode Recovery Times
7/17
STB5NK50Z/-1 - STD5NK50Z/-1 - STP5NK50Z - STP5NK50ZFP
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These
packages have a Lead-free second level interconnect . The category of second level interconnect is
marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The
maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an
ST trademark. ECOPACK specifications are available at: www.st.com
8/17
STB5NK50Z/-1 - STD5NK50Z/-1 - STP5NK50Z - STP5NK50ZFP
TO-220FP MECHANICAL DATA
mm.
DIM.
MIN.
A
4.4
inch
TYP
MAX.
MIN.
TYP.
4.6
0.173
0.181
MAX.
0.106
B
2.5
2.7
0.098
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
L3
28.6
30.6
1.126
1.204
L4
9.8
10.6
.0385
0.417
L5
2.9
3.6
0.114
0.141
L6
15.9
16.4
0.626
0.645
9
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
B
D
A
E
L7
L3
L6
F2
H
G
G1
F
F1
L7
L2
L5
1 2 3
L4
9/17
STB5NK50Z/-1 - STD5NK50Z/-1 - STP5NK50Z - STP5NK50ZFP
TO-220 MECHANICAL DATA
DIM.
mm.
MIN.
inch
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
b
0.61
0.88
0.024
0.034
b1
1.15
1.70
0.045
0.066
c
0.49
0.70
0.019
0.027
D
15.25
15.75
0.60
0.620
E
10
10.40
0.393
0.409
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
F
1.23
1.32
0.048
0.052
H1
6.20
6.60
0.244
0.256
J1
2.40
2.72
0.094
0.107
0.551
L
13
14
0.511
L1
3.50
3.93
0.137
L20
16.40
L30
10/17
TYP
0.154
0.645
28.90
1.137
øP
3.75
3.85
0.147
0.151
Q
2.65
2.95
0.104
0.116
STB5NK50Z/-1 - STD5NK50Z/-1 - STP5NK50Z - STP5NK50ZFP
TO-251 (IPAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
2.2
2.4
0.086
0.094
A1
0.9
1.1
0.035
0.043
A3
0.7
1.3
0.027
0.051
B
0.64
0.9
0.025
0.031
B2
5.2
5.4
0.204
0.212
B3
0.85
B5
0.033
0.3
0.012
B6
0.95
C
0.45
C2
0.48
D
6
E
6.4
6.6
0.037
0.6
0.017
0.023
0.6
0.019
0.023
6.2
0.236
0.244
0.252
0.260
G
4.4
4.6
0.173
0.181
H
15.9
16.3
0.626
0.641
L
9
9.4
0.354
0.370
L1
0.8
1.2
0.031
0.047
L2
0.8
1
0.031
0.039
A1
C2
A3
A
C
H
B
B3
=
1
=
2
G
=
=
=
E
B2
=
3
B5
L
D
B6
L2
L1
0068771-E
11/17
STB5NK50Z/-1 - STD5NK50Z/-1 - STP5NK50Z - STP5NK50ZFP
TO-262 (I2PAK) MECHANICAL DATA
mm.
inch
DIM.
MIN.
12/17
TYP
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
A1
2.40
2.72
0.094
0.107
b
0.61
0.88
0.024
0.034
b1
1.14
1.70
0.044
0.066
c
0.49
0.70
0.019
0.027
c2
1.23
1.32
0.048
0.052
D
8.95
9.35
0.352
0.368
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
E
10
10.40
0.393
0.410
L
13
14
0.511
0.551
L1
3.50
3.93
0.137
0.154
L2
1.27
1.40
0.050
0.055
STB5NK50Z/-1 - STD5NK50Z/-1 - STP5NK50Z - STP5NK50ZFP
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
B
1.5
C
12.8
D
20.2
G
16.4
N
50
T
TAPE MECHANICAL DATA
DIM.
mm
inch
MIN.
MAX.
A0
6.8
7
0.267 0.275
B0
10.4
10.6
0.409 0.417
B1
D
1.5
D1
1.5
E
1.65
MIN.
12.1
0.476
1.6
0.059 0.063
1.85
0.065 0.073
7.4
7.6
0.291 0.299
2.55
2.75
0.100 0.108
P0
3.9
4.1
0.153 0.161
P1
7.9
8.1
0.311 0.319
P2
1.9
2.1
0.075 0.082
40
15.7
MAX.
330
12.992
13.2
0.504 0.520
18.4
0.645 0.724
0.059
0.795
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
2500
0.059
F
R
MIN.
MAX.
K0
W
inch
MAX.
1.574
16.3
0.618
0.641
13/17
STB5NK50Z/-1 - STD5NK50Z/-1 - STP5NK50Z - STP5NK50ZFP
D2PAK MECHANICAL DATA
TO-247 MECHANICAL DATA
mm.
inch
DIM.
MAX.
MIN.
A
MIN.
4.4
TYP
4.6
0.173
TYP.
0.181
MAX.
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
D1
E
8
10
E1
0.368
0.315
10.4
0.393
8.5
0.334
G
4.88
5.28
0.192
0.208
L
15
15.85
0.590
0.625
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
M
2.4
3.2
0.094
0.126
R
0.4
0º
0.015
4º
3
V2
1
14/17
STB5NK50Z/-1 - STD5NK50Z/-1 - STP5NK50Z - STP5NK50ZFP
TO-252 (DPAK) MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
2.20
2.40
0.087
0.094
A1
0.90
1.10
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.213
C
0.45
0.60
0.018
0.024
C2
0.48
0.60
0.019
0.024
D
6.00
6.20
0.236
0.244
E
6.40
6.60
0.252
0.260
G
4.40
4.60
0.173
0.181
H
9.35
10.10
0.368
L2
0.8
0.398
0.031
L4
0.60
1.00
0.024
0.039
V2
0o
8o
0o
0o
P032P_B
15/17
STB5NK50Z/-1 - STD5NK50Z/-1 - STP5NK50Z - STP5NK50ZFP
Table 10: Revision History
Date
Revision
16-Jun-2004
1
06-Sep-2005
2
16/17
Description of Changes
2
D PAK Included. New Stylesheet.
Inserted Ecopack indication
STB5NK50Z/-1 - STD5NK50Z/-1 - STP5NK50Z - STP5NK50ZFP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
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© 2005 STMicroelectronics - All Rights Reserved
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17/17