STB5NK50Z/-1 - STD5NK50Z/-1 STP5NK50Z - STP5NK50ZFP N-CHANNEL 500V - 1.22Ω - 4.4A TO-220/FP-D/IPAK-D2/I2PAK Zener-Protected SuperMESH™MOSFET Figure 1: Package Table 1: General Features TYPE STB5NK50Z STB5NK50Z-1 STD5NK50Z STD5NK50Z-1 STP5K50Z STP5K50ZFP ■ ■ ■ ■ ■ ■ ■ VDSS RDS(on) ID Pw 500 500 500 500 500 500 < 1.5 Ω < 1.5 Ω < 1.5 Ω < 1.5 Ω < 1.5 Ω < 1.5 Ω 4.4 A 4.4 A 4.4 A 4.4 A 4.4 A 4.4 A 70 W 70 W 70 W 70 W 70 W 25 W V V V V V V TYPICAL RDS(on) = 1.22 Ω EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY 100% AVALANCHE RATED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY 3 12 3 1 I2PAK TO-220 3 TO-220FP 3 3 2 1 1 1 DPAK 2 IPAK D2PAK Figure 2: Internal Schematic Diagram DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC ■ LIGHTING Table 2: Order Codes SALES TYPE MARKING PACKAGE PACKAGING STB5NK50ZT4 B5NK50Z D2PAK TAPE & REEL STB5NK50Z-1 B5NK50Z I2PAK TUBE STD5NK50ZT4 D5NK50Z DPAK TAPE & REEL STD5NK50Z-1 D5NK50Z IPAK TUBE STP5NK50Z P5NK50Z TO-220 TUBE STP5NK50ZFP P5NK50ZFP TO-220FP TUBE Rev. 2 September 2005 1/17 STB5NK50Z/-1 - STD5NK50Z/-1 - STP5NK50Z - STP5NK50ZFP Table 3: Absolute Maximum ratings Symbol Parameter Value STP5NK50Z STB5NK50Z/-1 VDS VDGR VGS Unit STP5NK50ZFP STD5NK50Z STD5NK50Z-1 Drain-source Voltage (VGS = 0) 500 V Drain-gate Voltage (RGS = 20 kΩ) 500 V Gate- source Voltage ± 30 V ID Drain Current (continuous) at TC = 25°C 4.4 4.4 (*) 4.4 A ID Drain Current (continuous) at TC = 100°C 2.7 2.7 (*) 2.7 A 17.6 17.6 (*) 17.6 A 70 25 70 W 0.2 0.56 W/°C IDM () PTOT Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor VESD(G-S) dv/dt (1) 0.56 Gate source ESD(HBM-C=100pF, R=1.5KΩ) 3000 V 4.5 V/ns Peak Diode Recovery voltage slope VISO Insulation Withstand Voltage (DC) Tj Tstg Operating Junction Temperature Storage Temperature - 2500 - V -55 to 150 -55 to 150 °C °C ( ) Pulse width limited by safe operating area (1) ISD ≤4.4A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. (*) Limited only by maximum temperature allowed Table 4: Thermal Data TO-220 I2PAK/D2PAK TO-220FP DPAK 1.78 5 1.78 Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C Tl °C/W Table 5: Avalanche Characteristics Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 4.4 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 130 mJ Table 6: Gate-Source Zener Diode Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Conditions Igs=± 1mA (Open Drain) Min. 30 Typ. Max. Unit V PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/17 STB5NK50Z/-1 - STD5NK50Z/-1 - STP5NK50Z - STP5NK50ZFP ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 7: On /Off Symbol Parameter Test Conditions V(BR)DSS Drain-source Breakdown Voltage ID = 1 mA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125°C IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20 V VGS(th) Gate Threshold Voltage VDS = VGS, ID = 50 µA RDS(on Static Drain-source On Resistance VGS = 10 V, ID = 2.2 A Min. Typ. Max. 500 3 Unit V 1 50 µA µA ± 10 µA 3.75 4.5 V 1.22 1.5 Ω Typ. Max. Unit Table 8: Dynamic Symbol gfs (1) Parameter Test Conditions Min. Forward Transconductance VDS = 15 V , ID = 2.2 A 3.1 S Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, f = 1 MHz, VGS = 0 535 75 17 pF pF pF Equivalent Output Capacitance VGS = 0 V, VDS = 0 to 400 V 45 pF td(on) tr td(off) tf Turn-on Delay Time Rise Time Turn-off-Delay Time Fall Time VDD = 250 V, ID = 2.2 A, RG = 4.7 Ω, VGS = 10 V (see Figure 19) 15 10 32 15 ns ns ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 400 V, ID = 4.4 A, VGS = 10 V (see Figure 22) 20 4 10 28 nC nC nC Typ. Max. Unit 4.4 17.6 A A 1.6 V Ciss Coss Crss COSS eq (3). Table 9: Source Drain Diode Symbol Parameter ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 4.4 A, VGS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 4.4 A, di/dt = 100 A/µs VDD = 30V, Tj = 150°C (see Figure 20) trr Qrr IRRM Test Conditions Min. 310 1425 9.2 ns nC A (1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (2) Pulse width limited by safe operating area. (3) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 3/17 STB5NK50Z/-1 - STD5NK50Z/-1 - STP5NK50Z - STP5NK50ZFP Figure 3: Safe Operating Area For DPAK/IPAK/ D2PAK/I2PAK/TO-220 Figure 6: Safe Operating Area For TO-220FP Figure 4: Thermal Impedance For DPAK/IPAK/ D2PAK/I2PAK/TO-220 Figure 7: Thermal Impedance For TO-220FP Figure 5: Output Characteristics Figure 8: Transfer Characteristics 4/17 STB5NK50Z/-1 - STD5NK50Z/-1 - STP5NK50Z - STP5NK50ZFP Figure 9: Transconductance Figure 12: Static Drain-Source On Resistance Figure 10: Gate Charge vs Gate-source Voltage Figure 13: Capacitance Variations Figure 11: Normalized Gate Threshold Voltage vs Temperature Figure 14: Normalized On Resistance vs Temperature 5/17 STB5NK50Z/-1 - STD5NK50Z/-1 - STP5NK50Z - STP5NK50ZFP Figure 15: Source-Drain Forward Characteristics Figure 16: Maximum Avalanche Energy vs Temperature 6/17 Figure 17: Normalized BVDSS vs Temperature STB5NK50Z/-1 - STD5NK50Z/-1 - STP5NK50Z - STP5NK50ZFP Figure 18: Unclamped Inductive Load Test Circuit Figure 21: Unclamped Inductive Wafeform Figure 19: Switching Times Test Circuit For Resistive Load Figure 22: Gate Charge Test Circuit Figure 20: Test Circuit For Inductive Load Switching and Diode Recovery Times 7/17 STB5NK50Z/-1 - STD5NK50Z/-1 - STP5NK50Z - STP5NK50ZFP In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 8/17 STB5NK50Z/-1 - STD5NK50Z/-1 - STP5NK50Z - STP5NK50ZFP TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 inch TYP MAX. MIN. TYP. 4.6 0.173 0.181 MAX. 0.106 B 2.5 2.7 0.098 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L7 L3 L6 F2 H G G1 F F1 L7 L2 L5 1 2 3 L4 9/17 STB5NK50Z/-1 - STD5NK50Z/-1 - STP5NK50Z - STP5NK50ZFP TO-220 MECHANICAL DATA DIM. mm. MIN. inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 10/17 TYP 0.154 0.645 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 STB5NK50Z/-1 - STD5NK50Z/-1 - STP5NK50Z - STP5NK50ZFP TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 B5 0.033 0.3 0.012 B6 0.95 C 0.45 C2 0.48 D 6 E 6.4 6.6 0.037 0.6 0.017 0.023 0.6 0.019 0.023 6.2 0.236 0.244 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039 A1 C2 A3 A C H B B3 = 1 = 2 G = = = E B2 = 3 B5 L D B6 L2 L1 0068771-E 11/17 STB5NK50Z/-1 - STD5NK50Z/-1 - STP5NK50Z - STP5NK50ZFP TO-262 (I2PAK) MECHANICAL DATA mm. inch DIM. MIN. 12/17 TYP MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 A1 2.40 2.72 0.094 0.107 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.49 0.70 0.019 0.027 c2 1.23 1.32 0.048 0.052 D 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 E 10 10.40 0.393 0.410 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L2 1.27 1.40 0.050 0.055 STB5NK50Z/-1 - STD5NK50Z/-1 - STP5NK50Z - STP5NK50ZFP DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 D 1.5 D1 1.5 E 1.65 MIN. 12.1 0.476 1.6 0.059 0.063 1.85 0.065 0.073 7.4 7.6 0.291 0.299 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 40 15.7 MAX. 330 12.992 13.2 0.504 0.520 18.4 0.645 0.724 0.059 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 0.059 F R MIN. MAX. K0 W inch MAX. 1.574 16.3 0.618 0.641 13/17 STB5NK50Z/-1 - STD5NK50Z/-1 - STP5NK50Z - STP5NK50ZFP D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. inch DIM. MAX. MIN. A MIN. 4.4 TYP 4.6 0.173 TYP. 0.181 MAX. A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 D1 E 8 10 E1 0.368 0.315 10.4 0.393 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.4 0º 0.015 4º 3 V2 1 14/17 STB5NK50Z/-1 - STD5NK50Z/-1 - STP5NK50Z - STP5NK50ZFP TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 L2 0.8 0.398 0.031 L4 0.60 1.00 0.024 0.039 V2 0o 8o 0o 0o P032P_B 15/17 STB5NK50Z/-1 - STD5NK50Z/-1 - STP5NK50Z - STP5NK50ZFP Table 10: Revision History Date Revision 16-Jun-2004 1 06-Sep-2005 2 16/17 Description of Changes 2 D PAK Included. New Stylesheet. Inserted Ecopack indication STB5NK50Z/-1 - STD5NK50Z/-1 - STP5NK50Z - STP5NK50ZFP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 17/17