STGD3NB60HD N-CHANNEL 6A - 600V - DPAK PowerMESH™ IGBT TYPE VCES VCE(sat) (Max) @25°C IC @100°C STGD3NB60HD 600 V < 2.8 V 6A ■ ■ ■ ■ ■ ■ HIGH INPUT IMPEDANCE OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH FREQUENCY OPERATION TYPICAL SHORT CIRCUIT WITHSTAND TIME 5micro S-family, 4 micro H family CO-PACKAGED WITH TURBOSWITCH™ ANTIPARALLEL DIODE DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances. The suffix "H" identifies a family optimized for high frequency applications (up to 50kHz)in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop. 3 1 DPAK INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH FREQUENCY MOTOR CONTROLS ■ SMPS and PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES ■ ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STGD3NB60HDT4 GD3NB60HD DPAK TAPE & REEL September 2003 1/10 STGD3NB60HD ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VGS = 0) 600 V VECR Emitter-Collector Voltage 20 V VGE Gate-Emitter Voltage ± 20 V IC Collector Current (continuous) at TC = 25°C 10 A IC Collector Current (continuous) at TC = 100°C 6 A Collector Current (pulsed) 24 A ICM () PTOT Tstg Tj Total Dissipation at TC = 25°C 50 W Derating Factor 0.4 W/°C –55 to 150 °C Storage Temperature Operating Junction Temperature () Pulse width limited by safe operating area THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 2.5 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 100 °C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol VBR(CES) ICES IGES Parameter Collector-Emitter Breakdown Voltage Collector cut-off (VGE = 0) Gate-Emitter Leakage Current (VCE = 0) Test Conditions IC = 250 µA, VGE = 0 Min. Typ. Max. 600 Unit V VCE = Max Rating, TC = 25 °C 50 µA VCE = Max Rating, TC = 125 °C 100 µA VGE = ±20V , VCE = 0 ±100 nA Max. Unit 5 V 2.8 V ON (1) Symbol Parameter Test Conditions Min. Typ. VGE(th) Gate Threshold Voltage VCE = VGE, IC = 250µA VCE(sat) Collector-Emitter Saturation Voltage VGE = 15V, IC = 3 A 2.4 VGE = 15V, IC = 3 A, Tj =125°C 1.9 2/10 3 V STGD3NB60HD ELECTRICAL CHARACTERISTICS (CONTINUED) DYNAMIC Symbol gfs Parameter Forward Transconductance Test Conditions Min. VCE = 25 V , IC =3 A Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 25V, f = 1 MHz, VGE = 0 Qg Qge Qgc Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCE = 480V, IC = 3 A, VGE = 15V ICL Latching Current Vclamp = 480 V , Tj = 125°C RG = 10 Ω Typ. Max. Unit 2.4 S 235 33 6.6 pF pF pF 21 6 7.6 27 12 nC nC nC A SWITCHING ON Symbol td(on) tr (di/dt)on Eon Parameter Test Conditions Turn-on Delay Time Rise Time VCC = 480 V, IC = 3 A RG = 10Ω , VGE = 15 V Turn-on Current Slope Turn-on Switching Losses VCC= 480 V, IC = 3 A RG=10Ω VGE = 15 V,Tj = 125°C Min. Typ. Max. Unit 5 11 ns ns 400 77 A/µs µJ SWITCHING OFF Symbol tc Parameter Cross-over Time Unit ns 53 ns Fall Time 77 ns Turn-off Switching Loss 33 µJ Total Switching Loss 100 µJ 180 ns 82 ns Delay Time tc Max. 36 Off Voltage Rise Time Ets Vcc = 480 V, IC =3 A, RGE = 10 Ω , VGE = 15 V Typ. ns td(off) Eoff(**) Min. 76 tr(Voff) tf Test Conditions Cross-over Time Vcc = 480 V, IC = 3 A, RGE = 10 Ω , VGE = 15 V Tj = 125 °C tr(Voff) Off Voltage Rise Time td(off) Delay Time 58 ns Fall Time 110 ns Turn-off Switching Loss 88 µJ Total Switching Loss 165 µJ tf Eoff(**) Ets Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by max. junction temperature. (**)Losses include Also the Tail (Jedec Standardization) COLLECTOR-EMITTER DIODE Symbol Parameter Test Conditions Min. Typ. Ifm Forward Current Forward Current pulsed Vf Forward On-Voltage If = 1.5 A If = 1.5 A, Tj = 125 °C 1.6 1.3 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current If = 1.5 A ,VR = 400 V, Tj =125°C, di/dt = 100 A/µs 95 110 2.7 If trr Qrr Irrm Max. Unit 1.5 12 A A 2.1 V V ns nC A 3/10 STGD3NB60HD Thermal Impedance Output Characteristics Transfer Characteristics Transconductance Collector-Emitter On Voltage vs Temperature 4/10 STGD3NB60HD Collector-Emitter On Voltage vs Collettor Current Gate Threshold vs Temperature Normalized Breakdown Voltage vs Temperature Capacitance Variations Gate Charge vs Gate-Emitter Voltage Total Switching Losses vs Gate Resistance 5/10 STGD3NB60HD Total Switching Losses vs Temperature Emitter-collector Diode Characteristics Total Switching Losses vs Collector Current Switching Off Safe Operating Area 6/10 STGD3NB60HD Fig. 1: Gate Charge test Circuit Fig. 2: Test Circuit For Inductive Load Switching 7/10 STGD3NB60HD TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. A 2.20 2.40 0.087 TYP. MAX. 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L2 0.8 0.031 L4 0.60 1.00 0.024 0.039 V2 0o 8o 0o 0o P032P_B 8/10 STGD3NB60HD DPAK FOOTPRINT TUBE SHIPMENT (no suffix)* All dimensions are in millimeters All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A DIM. mm inch MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 D 1.5 D1 1.5 E 1.65 MIN. MIN. B 1.5 C 12.8 D 20.2 G 16.4 N 50 MAX. 12.992 0.059 13.2 0.504 0.520 0.795 18.4 0.645 0.724 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 MAX. 12.1 0.476 1.6 0.059 0.063 0.059 1.85 0.065 0.073 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R W 40 15.7 16.3 1.574 0.618 * on sales type MAX. 330 T TAPE MECHANICAL DATA inch 0.641 9/10 STGD3NB60HD Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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