STGW30NC120HD N-CHANNEL 30A - 1200V - TO-247 VERY FAST PowerMESH™ IGBT TARGET SPECIFICATION General features Type VCES STGW30NC120HD 1200V VCE(sat) (Max) @ 25°C < 2.8V ■ LOW ON-LOSSES ■ LOW ON-VOLTAGE DROP (Vcesat) ■ HIGH CURRENT CAPABILITY ■ HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) ■ LOW GATE CHARGE ■ VERY HIGH FREQUENCY OPERATION ■ LATCH CURRENT FREE OPERATION IC 30A 3 2 1 TO-247 Internal schematic diagram Description Using the latest high voltage technology based on its patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, with outstanding performances. The suffix “H” identifies a family optimized for high frequency application in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop. Applications ■ HIGH FREQUENCY MOTOR CONTROL ■ U.P.S ■ WELDING EQUIPMENT ■ INDUCTION HEATING Order codes Sales Type Marking Package Packaging STGW30NC120HD GW30NC120HD TO-247 TUBE November 2005 This is a preliminary information on a new product foreseen to be developed. Details are subject to change without notice Rev 1 1/9 www.st.com 9 STGW30NC120HD 1 Electrical ratings 1 Electrical ratings Table 1. Symbol VCES Absolute maximum ratings Parameter Collector-Emitter Voltage (VGS = 0) Value Unit 1200 V IC Note 2 Collector Current (continuous) at 25°C 60 A IC Note 2 Collector Current (continuous) at 100°C 30 A Collector Current (pulsed) 120 A VGE Gate-Emitter Voltage ± 20 V PTOT Total Dissipation at TC=25°C 200 W If Diode RMS Forward Current at TC=25°C 200 Tj Operating Junction Temperature ICM Note 1 – 55 to 150 Tstg Storage Temperature Table 2. Thermal resistance °C Min. Typ. Max. Unit Rthj-case Thermal Resistance Junction-case -- -- 0.625 °C/W Rthj-amb Thermal Resistance Junction-ambient -- -- 50 °C/W 2/9 STGW30NC120HD 2 2 Electrical characteristics Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 3. Static Symbol Parameter Test Conditions VBR(CES) Collectro-Emitter Breakdown Voltage VCE(SAT) Collector-Emitter Saturation Voltage VGE= 15V, IC= 20A, Tj= 125°C Gate Threshold Voltage VCE= VGE, IC= 250µA ICES Collector-Emitter Leakage Current (VCE = 0) VGE =Max Rating,Tc=25°C IGES Gate-Emitter Leakage Current (VCE = 0) VGE =± 20V , VCE = 0 Forward Transconductance VCE = 25V, IC= 25A VGE(th) gfs Table 4. Symbol C ies IC = 250µA, V GE = 0 Min. Typ. 1200 VGE= 15V, IC= 20A, Tj= 25°C Unit V 2.4 2 5 VGE =Max Rating, Tc=125°C 2.9 V V 7 V 10 100 µA µA ± 100 nA TBD S Dynamic Parameter Test Conditions Min. Typ. Cres Input Capacitance VCE = 25V, f = 1 MHz, VGE = 0 Output Capacitance Reverse Transfer Capacitance TBD TBD TBD Qg Qge Qgc Total Gate Charge Gate-Emitter Charge Gate-Collector Charge TBD TBD TBD C oes Max. VCE =960V, IC=20A,VGE =15V Max. Unit pF pF pF TBD nC nC nC 3/9 STGW30NC120HD 2 Electrical characteristics Table 5. Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on tr(Voff) td(off) tf tr(Voff) td(off) tf Table 6. Switching on/off (inductive load) Parameter Turn-on Delay Time Current Rise Time Turn-on Current Slope Turn-on Delay Time Current Rise Time Turn-on Current Slope Off Voltage Rise Time Turn-off Delay Time Current Fall Time Cross-over Time Off Voltage Rise Time Turn-off Delay Time Current Fall Time Parameter Eon Note 3 Turn-on Switching Losses Turn-off Switching Losses Total Switching Losses Ets Eon Note 3 Eoff Note 4 Ets Table 7. Symbol VCC = 960V, IC = 20A RG= 10Ω, VGE= 15V, Tj= 25°C (see Figure 3) VCC = 960V, IC = 20A RG= 10Ω, VGE= 15V, Tj= 125°C (see Figure 3) VCC = 960V, IC = 20A RG= 10Ω, VGE= 15V, Tj= 25°C (see Figure 3) VCC = 960V, IC = 20A RG= 10Ω, VGE= 15V, Tj= 125°C (see Figure 3) Turn-on Switching Losses Turn-off Switching Losses Total Switching Losses Test Conditions RG= 10Ω, V GE= 15V, Tj= 25°C (see Figure 3) VCC = 960V, IC = 20A RG= 10Ω, V GE= 15V, Tj= 125°C (see Figure 3) Typ. Max. Unit TBD 62 TBD ns ns A/µs TBD TBD TBD ns ns A/µs TBD TBD TBD ns ns ns TBD TBD TBD ns ns ns Typ. Max. Unit TBD TBD TBD µJ µJ µJ TBD TBD TBD µJ µJ µJ Collector-emitter diode Parameter Test Conditions If = 12A If = 12A, Tj = 125 °C Forward On-Voltage trr If = 12A, VR = 27V, Reverse Recovery Time Reverse Recovery Charge Tj = 125 °C, di/dt = 100A/µs Reverse Recovery Current (see Figure 4) Irrm Min. VCC = 960V, IC = 20A Vf Qrr Min. Switching energy (inductive load) Symbol Eoff Note 4 Test Conditions Min. Typ. Max. Unit 2.4 1.4 2.9 V V TBD TBD TBD ns nC A (1)Pulse width limited by max junction temperature (2) Calculated according to the iterative formula: T –T JMAX C I ( T ) = -------------------------------------------------------------------------------------------------C C R ×V (T , I ) THJ – C CESAT ( MAX ) C C (3) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25°C and 125°C) (4) Turn-off losses include also the tail of the collector current 4/9 STGW30NC120HD 3 3 Test Circuits Test Circuits Figure 1. Test Circuit for Inductive Load Switching Figure 2. Gate Charge Test Circuit Figure 3. Switching Waveform Figure 4. Diode Recovery Time Waveform 5/9 4 Package mechanical data 4 STGW30NC120HD Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 6/9 STGW30NC120HD 4 Package mechanical data TO-247 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.85 5.15 0.19 0.20 A1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 0.134 b2 3.0 3.40 0.118 c 0.40 0.80 0.015 0.03 D 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 e 5.45 L 14.20 14.80 0.560 L1 3.70 4.30 0.14 L2 0.620 0.214 18.50 0.582 0.17 0.728 øP 3.55 3.65 0.140 0.143 øR 4.50 5.50 0.177 0.216 S 5.50 0.216 7/9 STGW30NC120HD 5 Revision History 5 8/9 Revision History Date Revision 14-Nov-2005 1 Changes Initial release. STGW30NC120HD 5 Revision History Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. 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