STGD7NB120S-1 N-CHANNEL 7A - 1200V - IPAK PowerMESH™ IGBT PRELIMINARY DATA ■ ■ ■ ■ TYPE VCES VCE(sat) IC STGD7NB120S-1 1200 V < 2.1 V 7A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) VERY LOW ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT HIGH CURRENT CAPABILITY 3 2 1 DESCRIPTION IPAK Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH ™ IGBTs, with outstanding performances. The suffix “S” identifies a family optimized achieve minimum on-voltage drop for low frequency applications (<1kHz). INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ MOTOR CONTROL ■ LIGHT DIMMER ■ INTRUSH CURRENT LIMITATION ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit 1200 V Reverse Battery Protection 20 V Gate-Emitter Voltage ±20 V IC Collector Current (continuos) at TC = 25°C 10 A IC Collector Current (continuos) at TC = 100°C 7 A Collector Current (pulsed) 20 A Total Dissipation at TC = 25°C 55 W VCES Collector-Emitter Voltage (VGS = 0) VECR VGE ICM (■) PTOT Derating Factor Tstg Tj Storage Temperature Max. Operating Junction Temperature 0.4 W/°C –65 to 150 °C 150 °C (● ) Pulse width limited by safe operating area Aug 2000 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/6 STGD7NB120S-1 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 2.27 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 100 °C/W Thermal Resistance Case-heatsink Typ 0.5 °C/W Rthc-h ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit VBR(CES) Collectro-Emitter Breakdown Voltage IC = 250 µA, VGE = 0 1200 V VBR(ECR) Emitter-Collectro Breakdown Voltage IC = 10mA, VGE = 0 20 V ICES Collector cut-off (VGE = 0) IGES Gate-Emitter Leakage Current (VCE = 0) VCE = Max Rating, TC = 25 °C 50 µA VCE = Max Rating, TC = 125 °C 250 µA VGE = ±20V , VCE = 0 ±100 nA Max. Unit ON (1) Symbol VGE(th) VGE VCE(sat) Parameter Test Conditions Min. Typ. Gate Threshold Voltage VCE = VGE, IC = 250µA 5 V Gate Emitter Voltage VCE =2.5V, IC = 2A, Tj = 25÷125°C 6.5 V VGE = 15V, IC = 3.5 A 1.6 V Collector-Emitter Saturation Voltage VGE = 15V, IC = 7 A 2.1 V Max. Unit 3 VGE = 15V, IC = 10 A 1.7 DYNAMIC Symbol Parameter Test Conditions VCE = 25 V , IC =7 A Min. Typ. 2.5 4.5 S gfs Forward Transconductance Cies Input Capacitance 430 pF Coes Output Capacitance 40 pF Cres Reverse Transfer Capacitance 7 pF 29 nC VCE = 25V, f = 1 MHz, VGE = 0 Qg Gate Charge VCE = 960V, IC = 7 A, VGE = 15V ICL Latching Current Vclamp = 960V , Tj = 150°C RG = 1KΩ 10 A SWITCHING ON Symbol td(on) tr (di/dt)on Eon 2/6 Parameter Turn-on Delay Time Rise Time Turn-on Current Slope Turn-on Switching Losses Test Conditions VCC = 960 V, IC = 7 A RG = 1KΩ , VGE = 15 V VCC= 960 V, IC = 7 A, RG=1KΩ VGE = 15 V, Tj = 125°C Min. Typ. Max. Unit 570 ns 270 ns 800 A/µs 3.2 µJ STGD7NB120S-1 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING OFF Symbol tc tr(Voff) tf Eoff(**) tc tr(Voff) tf Eoff(**) Parameter Test Conditions Min. Typ. Max. Unit 4.9 µs 2.9 µs 3.3 µs Turn-off Switching Loss 15 mJ Cross-over Time 7.5 µs 5.5 µs 6.2 µs 22 mJ Cross-over Time Off Voltage Rise Time Fall Time Off Voltage Rise Time Fall Time Vcc = 960 V, IC = 7 A, RGE = 1KΩ , VGE = 15 V Vcc = 960 V, IC = 7 A, RGE = 1KΩ , VGE = 15 V Tj = 125 °C Turn-off Switching Loss Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by max. junction temperature. (**)Losses include Also the Tail (Jedec Standardization) 3/6 STGD7NB120S-1 Fig. 1: Gate Charge test Circuit 4/6 Fig. 2: Test Circuit For Inductive Load Switching STGD7NB120S-1 TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. 2.4 0.086 MAX. 0.094 0.043 A 2.2 A1 0.9 1.1 0.035 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 B5 0.033 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 L2 0.8 0.047 1 0.031 0.039 A1 C2 A3 A C H B B3 = 1 = 2 G = = = E B2 = 3 B5 L D B6 L2 L1 0068771-E 5/6 STGD7NB120S-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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