STMICROELECTRONICS STM2DPFS30L

STM2DPFS30L

P - CHANNEL 30V - 0.145Ω - 2A MiniS0-8
STripFET MOSFET PLUS SCHOTTKY RECTIFIER

PRELIMINARY DATA
MAIN PRODUCT CHARACTERISTICS
MOSFET
V DSS
R DS(on )
ID
30V
<0.165Ω
2A
SCHOTTKY
IF (A V)
V RRM
V F(M AX)
1A
40V
0.55V
MiniSO-8
DESCRIPTION:
This product associates the latest low voltage
St ripFET  in p-channel version to a low drop
Schottk y diode. Such configuration is extremely
versatile in implementing a large variety of DC-DC
convert ers for printers, portable equipment, and
cellular phones.
New MiniSO-8 package features:
■
■
INTERNAL SCHEMATIC DIAGRAM
Half footprint area versus standard SO-8, for
application where minimum circuit board
space is necessary.
Extremely low profile, ideal for low thickness
equipment.
MOSFET ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
Parameter
Valu e
Unit
Drain-source Voltage (VGS = 0)
30
V
V DGR
Drain- gate Voltage (RGS = 20 kΩ)
30
V
V GS
Gate-source Voltage
± 20
V
o
ID
Drain Current (continuous) at Tc = 25 C
2
A
ID
Drain Current (continuous) at Tc = 100 oC
1.3
A
8
A
1.25
W
IDM(•)
P t ot
Drain Current (pulsed)
o
Total Dissipation at Tc = 25 C
SCHOTTKY ABSOLUTE MAXIMUM RATINGS
Symb ol
V RRM
I F(RMS)
Parameter
Repetitive Peak Reverse Voltage
RMS Forward Current
o
Valu e
Un it
40
V
2
A
I F (AV)
Average F orward Current
T a=60 C
δ =0.5
1.2
A
I FSM
Surge Non Repetitive Forward Current
tp= 10 ms
Sinusoidal
5.5
A
dv/dt
Critical Rate Of Rise Of Reverse Voltage
10000
V/µs
(•) Pulse width limited by safe operating area
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
July 1999
1/6
STM2DPFS30L
THERMAL DATA
R thj -amb
T s tg
Tj
(*) Thermal Resistance Junction-ambient MOSFET
Storage Temperature Range
Maximum
Junction Temperature
o
100
-65 to 150
150
C/W
o
C
o
C
2
(*) Mounted on a 1 in pad of 2oz Cu in FR-4 board
MOSFET ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbo l
V (BR)DSS
Parameter
Drain-source
Breakdown Voltage
Test Con ditions
I D = 250 µA
V GS = 0
I DSS
Zero
Gate
Voltage V DS = Max Rating
Drain Current (V GS = 0) V DS = Max Rating
IGSS
Gate-body
Leakage V GS = ± 20 V
Current (VDS = 0)
Min.
Typ.
Max.
30
Unit
V
T c = 125 oC
1
10
µA
µA
± 100
nA
ON (∗)
Symbo l
Parameter
Test Con ditions
ID = 250 µA
V GS(th)
Gate Threshold Voltage V DS = V GS
R DS(on)
Static Drain-source On V GS = 10V
Resistance
V GS = 4.5V
I D(o n)
On State Drain Current
Min.
Typ.
Max.
Unit
1
1.7
2.5
V
0.145
0.18
0.165
0.2
Ω
ID = 1 A
ID = 1 A
2
V DS > ID(o n) x R DS(on )ma x
V GS = 10 V
A
DYNAMIC
Symbo l
g f s (∗)
C iss
C os s
C rss
2/6
Parameter
Forward
Transconductance
Test Con ditions
V DS > ID(o n) x R DS(on )ma x
Input Capacitance
V DS = 25 V
Output Capacitance
Reverse
T ransfer
Capacitance
f = 1 MHz
I D =1 A
V GS = 0
Min.
Typ.
Max.
2
510
170
55
Unit
S
660
220
72
pF
pF
pF
STM2DPFS30L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Typ.
Max.
Unit
t d(on)
tr
Turn-on Delay T ime
Rise Time
Parameter
V DD = 15 V
I D = 1.5 A
R G = 4.7 Ω
V GS = 4.5 V
(Resistive Load, see fig. 1)
Test Con ditions
14.5
37
19
48
ns
ns
Qg
Q gs
Q gd
Total G ate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 24 V
5.5
1.7
1.8
ID = 3 A
Min.
V GS = 5 V
nC
nC
nC
SWITCHING OFF
Symbo l
t d(of f)
tf
Parameter
Turn-off Delay T ime
Fall T ime
Test Con ditions
Min.
Typ.
Max.
88
23
V DD = 15 V
ID = 1.5 A
V GS = 4.5 V
R G = 4.7 Ω
(Resistive Load, see fig. 1)
Unit
ns
ns
SOURCE DRAIN DIODE
Symbo l
Parameter
ISD
I SDM (•)
Source-drain Current
Source-drain
Current
(pulsed)
V SD (∗)
Forward On Voltage
t rr
Q rr
I RRM
Reverse
Time
Reverse
Charge
Reverse
Current
Test Con ditions
I SD = 2 A
Min.
Typ.
V GS = 0
Recovery I SD = 2 A
V DD = 15V
Recovery
Max.
Unit
2
8
A
A
1.2
V
ns
di/dt = 100 A/µs
T j = 150 o C
tbd
nC
Α
Recovery
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
SCHOTTKY STATIC ELETTRICAL CHARACTERISTICS
Symbo l
I R (∗)
V F(∗)
Parameter
Reversed
Current
Test Con ditions
o
Leakage T J= 25 C
T J= 100 oC
Forward Voltage drop
T J=
T J=
T J=
T J=
25 oC
o
100 C
o
25 C
100 oC
Min.
V R =40V
V R=40V
I F =1A
I F =1A
I F =2A
I F =2A
Typ.
Max.
Unit
1.5
40
5
µA
mA
0.55
0.51
0.7
0.7
V
V
V
V
0.45
3/6
STM2DPFS30L
Fig. 1: Switching Times Test Circuits For
Resistive Load
4/6
Fig. 2: Gate Charge test Circuit
STM2DPFS30L
MiniSO-8 MECHANICAL DATA
A
A1
A2
D
D2
E
E1
E2
E3
E4
mm
TYP.
1.10
0.10
0.86
3.00
2.95
4.90
3.00
2.95
0.51
0.51
R
R1
t1
t2
θ1
θ2
L
L1
e
S
0.15
0.15
0.31
0.41
3.0°
12.0°
0.55
0.95
0.65
0.525
DIM.
MIN.
MAX.
MIN.
inch
TYP.
MAX.
5/6
STM2DPFS30L
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specific ation mentioned in this publication are
subjec t to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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