STMICROELECTRONICS STP80NF55-06FP

STP80NF55-06
STP80NF55-06FP

N - CHANNEL 55V - 0.005Ω - 80A TO-220/TO-220FP
STripFET POWER MOSFET
PRELIMINARY DATA
TYPE
V DSS
R DS(on)
ID
STP80NF55-06
STP80NF55-06FP
55 V
55 V
< 0.0065 Ω
< 0.0065 Ω
80 A
60 A
■
■
■
■
TYPICAL RDS(on) = 0.005 Ω
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION
3
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique ”Single Feature
Size ” strip-based process. The resulting transistor shows extremely high packing density for low
on-resistance, rugged avalance characteristics
and less critical alignment steps therefore a remarkable manufacturing reproducibility.
1
3
2
1
TO-220
2
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ SOLENOID AND RELAY DRIVERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ DC-DC CONVERTERS
■ AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
STP80NF55-06
V DS
V DGR
V GS
Unit
STP55NF 55-06FP
Drain-source Voltage (VGS = 0)
55
Drain- gate Voltage (R GS = 20 kΩ)
55
V
± 20
V
G ate-source Voltage
V
ID
Drain Current (continuous) at Tc = 25 o C
80
60
A
ID
o
57
42
A
I DM (•)
P tot
Drain Current (continuous) at Tc = 100 C
Drain Current (pulsed)
320
240
A
T otal Dissipation at Tc = 25 o C
210
50
W
Derating Factor
1.43
0.33
W/ oC

2000
V
V ISO
Insulation W ithstand Voltage (DC)
dv/dt
Peak Diode Recovery voltage slope
Ts tg
Tj
Storage Temperature
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
July 1999
7
V/ns
-65 to 175
o
C
175
o
C
( 1) ISD ≤ 80 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/6
STP80NF55-06/FP
THERMAL DATA
R thj -case
Thermal Resistance Junction-case
R thj -amb
R thc-sink
Tl
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature F or Soldering Purpose
TO-220
TO-220FP
0.7
3
Max
62.5
0.5
300
o
C/W
o
C/W
C/W
o
C
o
AVALANCHE CHARACTERISTICS
Symbo l
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Parameter
80
A
E AS
Single Pulse Avalanche Energy
(starting Tj = 25 o C, ID = IAR , V DD = 30 V)
650
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbo l
V (BR)DSS
I DSS
IGSS
Parameter
Drain-source
Breakdown Voltage
Test Con ditions
I D = 250 µA
Typ.
Max.
55
V GS = 0
V DS = Max Rating
Zero Gate Voltage
Drain Current (V GS = 0) V DS = Max Rating
Gate-body Leakage
Current (VDS = 0)
Min.
Unit
V
o
T c = 125 C
V GS = ± 20 V
1
10
µA
µA
± 100
nA
ON (∗)
Symbo l
Parameter
Test Con ditions
V GS(th)
Gate Threshold Voltage V DS = V GS
ID = 250 µA
R DS(on)
Static Drain-source On
Resistance
V GS = 10V
ID = 40 A
I D(o n)
On State Drain Current
V DS > ID(o n) x R DS(on )ma x
V GS = 10 V
Min.
Typ.
Max.
Unit
2
3
4
V
0.005
0.0065
Ω
80
A
DYNAMIC
Symbo l
g f s (∗)
C iss
C os s
C rss
2/6
Parameter
Test Con ditions
Forward
Transconductance
V DS > ID(o n) x R DS(on )ma x
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS = 25 V
f = 1 MHz
I D =40 A
V GS = 0
Min.
Typ.
Max.
Unit
50
S
8000
1100
220
pF
pF
pF
STP80NF55-06/FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
t d(on)
tr
Turn-on Delay T ime
Rise Time
V DD = 27 V
I D = 40 A
V GS = 10 V
R G = 4.7 Ω
(Resistive Load, see fig. 3)
35
240
Qg
Q gs
Q gd
Total G ate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 44 V
178
29
61
230
nC
nC
nC
Typ.
Max.
Unit
I D = 80 A
VGS = 10 V
ns
ns
SWITCHING OFF
Symbo l
Parameter
Test Con ditions
Min.
t d(of f)
tf
Turn-off Delay T ime
Fall T ime
V DD = 27 V
I D = 40 A
V GS = 10 V
R G =4.7 Ω
(Resistive Load, see fig. 3)
260
80
ns
ns
t d(of f)
tr (Voff)
tf
tc
Turn-off Delay T ime
Off-voltage Rise T ime
Fall T ime
Cross-over Time
V DD = 44 V
I D = 80 A
V GS = 10 V
R G = 4.7 Ω
(Induct ive Load, see fig. 5)
225
55
145
205
ns
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Parameter
Test Con ditions
ISD
I SDM (•)
Source-drain Current
Source-drain Current
(pulsed)
V SD (∗)
Forward On Voltage
I SD = 80 A
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
di/dt = 100 A/µs
I SD = 80 A
T J = 150 o C
V DD = 20 V
(see test circuit, fig. 5)
t rr
Q rr
I RRM
Min.
Typ.
V GS = 0
Max.
Unit
80
320
A
A
1.5
V
80
ns
0.24
µC
6
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
3/6
STP80NF55-06/FP
TO-220 MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
D1
0.107
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
L4
13.0
14.0
0.511
L5
2.65
2.95
0.104
0.551
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
3.5
3.93
0.137
0.154
3.75
3.85
0.147
0.151
D1
C
D
A
E
L9
DIA.
H2
G
G1
F1
L2
F2
F
Dia.
L5
L9
L7
L6
4/6
L4
P011C
STP80NF55-06/FP
TO-220FP MECHANICAL DATA
mm
DIM.
MIN.
A
4.4
inch
TYP.
MAX.
MIN.
TYP.
MAX.
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
28.6
30.6
1.126
1.204
L4
9.8
10.6
0.385
0.417
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
B
D
A
E
L3
L3
L6
F
F1
L7
F2
H
G
G1
¯
1 2 3
L2
L4
5/6
STP80NF55-06/FP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibil ity for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specific ation mentioned in this publication are
subjec t to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
6/6
http://www.st.com
.