STMICROELECTRONICS STS4DNFS30L

STS4DNFS30L
N-CHANNEL 30V - 0.044Ω - 4A SO-8
STripFET™ II MOSFET PLUS SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
MOSFET
SCHOTTKY
VDSS
RDS(on)
ID
30 V
< 0.055 Ω
4A
IF(AV)
VRRM
VF(MAX)
3A
30 V
0.51 V
SO-8
DESCRIPTION
This product associates the latest low voltage
STripFET™ in n-channel version to a low drop
Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DC-DC
converters for printers, portable equipment, and cellular phones.
INTERNAL SCHEMATIC DIAGRAM
MOSFET ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VDGR
VGS
ID
ID
IDM (●)
PTOT
Value
Unit
Drain-source Voltage (VGS = 0)
Parameter
30
V
Drain-gate Voltage (RGS = 20 kΩ)
30
V
± 16
V
Drain Current (continuous) at TC = 25°C
4
A
Gate- source Voltage
Drain Current (continuous) at TC = 100°C
2.5
A
Drain Current (pulsed)
16
A
Total Dissipation at TC = 25°C
2
W
Value
Unit
Repetitive Peak Reverse Voltage
30
V
RMS Forward Current
20
A
SCHOTTKY ABSOLUTE MAXIMUM RATINGS
Symbol
VRRM
IF(RMS)
Parameter
IF(AV)
Average Forward Current
TL = 125°C
δ = 0.5
3
A
IFSM
Surge Non Repetitive Forward Current
tp = 10 ms
Sinusoidal
75
A
IRRM
Repetitive Peak Reverse Current
tp = 2 µs
F=1 kHz
1
A
IRSM
Non Repetitive Peak Reverse Current
tp = 100 µs
1
A
dv/dt
Critical Rate Of Rise Of Reverse Voltage
10000
V/µs
(•)Pulse width limited by safe operating area
July 2002
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STS4DNFS30L
THERMAL DATA
Rthj-amb
Tstg
Tl
(*)Thermal Resistance Junction-ambient MOSFET
62.5
°C/W
Storage Temperature Range
-55 to 150
°C
Junction Temperature
-55 to 150
°C
(*) Mounted on FR-4 board (Steady State)
MOSFET ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 16 V
V(BR)DSS
Min.
Typ.
Max.
30
Unit
V
VDS = Max Rating, TC = 125 °C
1
µA
10
µA
±100
nA
Typ.
Max.
Unit
ON (1)
Symbol
Parameter
Test Conditions
Min.
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 2 A
0.044
0.055
Ω
VGS = 5V, ID = 2 A
0.051
0.065
Ω
Typ.
Max.
Unit
1
V
DYNAMIC
Symbol
gfs (1)
2/8
Parameter
Forward Transconductance
Test Conditions
VDS = 15 V , ID = 2 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
5
S
330
pF
Ciss
Input Capacitance
Coss
Output Capacitance
90
pF
Crss
Reverse Transfer
Capacitance
40
pF
STS4DNFS30L
ELECTRICAL CHARACTERISTICS (CONTINUED)
1.
SWITCHING ON
Symbol
td(on)
tr
Parameter
Turn-on Delay Time
Rise Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Test Conditions
Min.
VDD = 15 V, ID = 2 A
RG = 4.7 Ω VGS = 5 V
(see test circuit, Figure 1)
VDD = 24 V, ID = 4 A,
VGS = 5 V
Typ.
Max.
Unit
11
ns
100
ns
6.5
9
nC
3.6
nC
2
nC
SWITCHING OFF
Symbol
td(off)
tf
Parameter
Turn-off Delay Time
Fall Time
Test Conditions
Min.
VDD = 15 V, ID = 2 A,
RG = 4.7Ω, VGS = 5 V
(see test circuit, Figure 1)
Typ.
Max.
25
22
Unit
ns
ns
SOURCE DRAIN DIODE
Symbol
ISD
Parameter
Test Conditions
Min.
Typ.
Source-drain Current
ISDM (2)
Source-drain Current (pulsed)
VSD (1)
Forward On Voltage
ISD = 4 A, VGS = 0
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ISD = 4 A, di/dt = 100A/µs,
VDD = 15 V, Tj = 150°C
(see test circuit, Figure 3)
IRRM
Reverse Recovery Current
Max.
Unit
4
A
16
A
1.2
V
35
ns
25
nC
1.4
A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Safe Operating Area
Thermal Impedance
3/8
STS4DNFS30L
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/8
STS4DNFS30L
Normalized Gate Thereshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
STS4DNFS30L
Fig. 1: Switching Times Test Circuit For
Resistive Load
Fig. 3: Test Circuit For Diode Recovery Behaviour
6/8
Fig. 2: Gate Charge test Circuit
STS4DNFS30L
SO-8 MECHANICAL DATA
mm
DIM.
MIN.
TYP.
A
a1
MAX.
MIN.
TYP.
1.75
0.1
0.003
0.009
1.65
0.65
MAX.
0.068
0.25
a2
a3
inch
0.064
0.85
0.025
0.033
b
0.35
0.48
0.013
0.018
b1
0.19
0.25
0.007
0.010
C
0.25
0.5
0.010
0.019
D
4.8
5.0
0.188
0.196
E
5.8
6.2
0.228
0.244
c1
45 (typ.)
e
1.27
0.050
e3
3.81
0.150
F
3.8
4.0
0.14
0.157
L
0.4
1.27
0.015
0.050
M
S
0.6
0.023
8 (max.)
0016023
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STS4DNFS30L
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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© 2002 STMicroelectronics - Printed in Italy - All Rights Reserved
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