STMICROELECTRONICS STN4NF03

STN4NF03L
N-CHANNEL 30V - 0.039Ω - 6.5A SOT-223
STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STN4NF03L
30V
<0.05Ω
6.5A
■
■
TYPICAL RDS(on) = 0.039Ω
LOW THRESHOLD DRIVE
2
1
DESCRIPTION
This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™ ” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance,
rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
2
3
SOT-223
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ DC-DC & DC-AC CONVERTERS
■ DC MOTOR CONTROL (DISK DRIVES, etc.)
■ SYNCHRONOUS RECTIFICATION
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VDGR
VGS
Parameter
Value
Unit
Drain-source Voltage (VGS = 0)
30
V
Drain-gate Voltage (RGS = 20 kΩ)
30
V
Gate- source Voltage
±16
V
ID
Drain Current (continuous) at TC = 25°C
6.5
A
ID
Drain Current (continuous) at TC = 100°C
4.5
A
Drain Current (pulsed)
26
A
IDM ()
PTOT
Total Dissipation at TC = 25°C
Derating Factor
EAS (1)
Tstg
Tj
Single Pulse Avalanche Energy
Storage Temperature
Operating Junction Temperature
(● ) Pulse width limited by safe operating area
December 2002
3.3
W
0.026
W/°C
200
mJ
–55 to 175
°C
(1) Starting Tj=25°C, ID=6.5A, VDD=15V
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STN4NF03L
THERMAL DATA
Rthj-PCB
Thermal Resistance Junction-PC Board Max (*)
38
°C/W
Rthj-PCB
Thermal Resistance Junction-PCB Max (**)
100
°C/W
Maximum Lead Temperature For Soldering Purpose
(1.6 mm from case for 10s)
260
°C
Tl
2
Note: (*) When mounted on 1 in FR-4 board , 2 oz Cu, t<10s.
Note: (**) Minimum recommended footprint
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±16V
V(BR)DSS
Min.
Typ.
Max.
30
Unit
V
VDS = Max Rating, TC = 125 °C
1
µA
10
µA
±100
nA
Max.
Unit
ON (1)
Symbol
Parameter
Test Conditions
Min.
Typ.
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static Drain-source On
Resistance
VGS = 10 V, ID = 2 A
0.039
0.05
Ω
VGS = 5 V, ID = 2 A
0.046
0.06
Ω
Min.
Typ.
Max.
Unit
1
3
S
330
pF
1
V
DYNAMIC
Symbol
gfs (1)
2/8
Parameter
Test Conditions
Forward Transconductance
VDS = 10 V , ID =2 A
Ciss
Input Capacitance
VDS = 25 V, f = 1 MHz, VGS = 0
Coss
Output Capacitance
90
pF
Crss
Reverse Transfer
Capacitance
40
pF
STN4NF03L
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
td(on)
tr
Qg
Qgs
Qgd
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
11
ns
Rise Time
VDD = 15 V, ID = 2 A
RG = 4.7Ω VGS = 4.5 V
(see test circuit, Figure 3)
100
ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 24 V, ID = 4 A,
VGS = 10 V
6.5
3.6
2
9
nC
nC
nC
Typ.
Max.
Unit
Turn-on Delay Time
SWITCHING OFF
Symbol
td(off)
tf
Parameter
Turn-off-Delay Time
Test Conditions
Min.
VDD = 15 V, ID = 2 A,
RG = 4.7Ω, VGS = 4.5 V
(see test circuit, Figure 3)
Fall Time
25
ns
22
ns
SOURCE DRAIN DIODE
Symbol
Parameter
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
VSD (1)
Forward On Voltage
ISD = 6.5 A, VGS = 0
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 6.5 A, di/dt = 100 A/µs,
VDD = 15 V, Tj = 150°C
(see test circuit, Figure 5)
trr
Qrr
IRRM
Test Conditions
Min.
Typ.
Max.
Unit
6.5
26
A
A
1.5
V
35
25
1.4
ns
nC
A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Safe Operating Area
Thermal Impedence Junction-PCB
3/8
STN4NF03L
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/8
STN4NF03L
Normalized Gate Thereshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
STN4NF03L
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8
STN4NF03L
SOT-223 MECHANICAL DATA
mm
DIM.
MIN.
TYP.
A
inch
MAX.
MIN.
TYP.
1.80
MAX.
0.071
B
0.60
0.70
0.80
0.024
0.027
0.031
B1
2.90
3.00
3.10
0.114
0.118
0.122
c
0.24
0.26
0.32
0.009
0.010
0.013
D
6.30
6.50
6.70
0.248
0.256
0.264
e
2.30
0.090
e1
4.60
0.181
E
3.30
3.50
3.70
0.130
0.138
0.146
H
6.70
7.00
7.30
0.264
0.276
0.287
10o
V
A1
10o
0.02
P008B
7/8
STN4NF03L
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consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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