STN4NF03L N-CHANNEL 30V - 0.039Ω - 6.5A SOT-223 STripFET™ II POWER MOSFET TYPE VDSS RDS(on) ID STN4NF03L 30V <0.05Ω 6.5A ■ ■ TYPICAL RDS(on) = 0.039Ω LOW THRESHOLD DRIVE 2 1 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™ ” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. 2 3 SOT-223 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ DC-DC & DC-AC CONVERTERS ■ DC MOTOR CONTROL (DISK DRIVES, etc.) ■ SYNCHRONOUS RECTIFICATION ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS Parameter Value Unit Drain-source Voltage (VGS = 0) 30 V Drain-gate Voltage (RGS = 20 kΩ) 30 V Gate- source Voltage ±16 V ID Drain Current (continuous) at TC = 25°C 6.5 A ID Drain Current (continuous) at TC = 100°C 4.5 A Drain Current (pulsed) 26 A IDM () PTOT Total Dissipation at TC = 25°C Derating Factor EAS (1) Tstg Tj Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature (● ) Pulse width limited by safe operating area December 2002 3.3 W 0.026 W/°C 200 mJ –55 to 175 °C (1) Starting Tj=25°C, ID=6.5A, VDD=15V 1/8 STN4NF03L THERMAL DATA Rthj-PCB Thermal Resistance Junction-PC Board Max (*) 38 °C/W Rthj-PCB Thermal Resistance Junction-PCB Max (**) 100 °C/W Maximum Lead Temperature For Soldering Purpose (1.6 mm from case for 10s) 260 °C Tl 2 Note: (*) When mounted on 1 in FR-4 board , 2 oz Cu, t<10s. Note: (**) Minimum recommended footprint ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating IGSS Gate-body Leakage Current (VDS = 0) VGS = ±16V V(BR)DSS Min. Typ. Max. 30 Unit V VDS = Max Rating, TC = 125 °C 1 µA 10 µA ±100 nA Max. Unit ON (1) Symbol Parameter Test Conditions Min. Typ. VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(on) Static Drain-source On Resistance VGS = 10 V, ID = 2 A 0.039 0.05 Ω VGS = 5 V, ID = 2 A 0.046 0.06 Ω Min. Typ. Max. Unit 1 3 S 330 pF 1 V DYNAMIC Symbol gfs (1) 2/8 Parameter Test Conditions Forward Transconductance VDS = 10 V , ID =2 A Ciss Input Capacitance VDS = 25 V, f = 1 MHz, VGS = 0 Coss Output Capacitance 90 pF Crss Reverse Transfer Capacitance 40 pF STN4NF03L ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Test Conditions Min. Typ. Max. Unit 11 ns Rise Time VDD = 15 V, ID = 2 A RG = 4.7Ω VGS = 4.5 V (see test circuit, Figure 3) 100 ns Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 24 V, ID = 4 A, VGS = 10 V 6.5 3.6 2 9 nC nC nC Typ. Max. Unit Turn-on Delay Time SWITCHING OFF Symbol td(off) tf Parameter Turn-off-Delay Time Test Conditions Min. VDD = 15 V, ID = 2 A, RG = 4.7Ω, VGS = 4.5 V (see test circuit, Figure 3) Fall Time 25 ns 22 ns SOURCE DRAIN DIODE Symbol Parameter ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 6.5 A, VGS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 6.5 A, di/dt = 100 A/µs, VDD = 15 V, Tj = 150°C (see test circuit, Figure 5) trr Qrr IRRM Test Conditions Min. Typ. Max. Unit 6.5 26 A A 1.5 V 35 25 1.4 ns nC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area Thermal Impedence Junction-PCB 3/8 STN4NF03L Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STN4NF03L Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 STN4NF03L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STN4NF03L SOT-223 MECHANICAL DATA mm DIM. MIN. TYP. A inch MAX. MIN. TYP. 1.80 MAX. 0.071 B 0.60 0.70 0.80 0.024 0.027 0.031 B1 2.90 3.00 3.10 0.114 0.118 0.122 c 0.24 0.26 0.32 0.009 0.010 0.013 D 6.30 6.50 6.70 0.248 0.256 0.264 e 2.30 0.090 e1 4.60 0.181 E 3.30 3.50 3.70 0.130 0.138 0.146 H 6.70 7.00 7.30 0.264 0.276 0.287 10o V A1 10o 0.02 P008B 7/8 STN4NF03L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com 8/8