STQ1NE10L N-CHANNEL 100V - 0.3 Ω - 1A TO-92 STripFET™ POWER MOSFET TYPE STQ1NE10L ■ ■ ■ ■ ■ VDSS RDS(on) ID 100 V <0.4 Ω 1A TYPICAL RDS(on) = 0.3 Ω EXCEPTIONAL HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED AVALANCHE RUGGED TECHNOLOGY LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. TO-92 TO-92 (Ammopack) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ DC MOTOR CONTROL (DISK DRIVES, etc.) ■ DC-DC & DC-AC CONVERTERS ■ SYNCHRONOUS RECTIFICATION ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM(•) Ptot(1) Parameter 100 V 100 V Gate- source Voltage ± 16 V Drain Current (continuous) at TC = 25°C 1 A Drain Current (continuous) at TC = 100°C 0.6 A 4 A Drain Current (pulsed) Total Dissipation at TC = 25°C dv/dt (2) Peak Diode Recovery voltage slope EAS (3) Single Pulse Avalanche Energy Tj Storage Temperature Operating Junction Temperature (•) Pulse width limited by safe operating area. (1) Related to Rthj -l December 2002 . Unit Drain-gate Voltage (RGS = 20 kΩ) Derating Factor Tstg Value Drain-source Voltage (VGS = 0) 3 W 0.025 W/°C 6 V/ns 400 mJ -55 to 150 °C °C (2) ISD ≤1A, di/dt ≤200A/µs, VDD ≤ V (BR)DSS, Tj ≤ TJMAX (3) Starting T j = 25 oC, ID = 1A, VDD = 50V 1/9 STQ1NE10L THERMAL DATA Rthj-Lead Rthj-amb Tl Thermal Resistance Junction-Lead Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max Typ 40 125 260 °C/W °C/W °C ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating TC = 125°C IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 16 V V(BR)DSS Min. Typ. Max. 100 Unit V 1 10 µA µA ±100 nA Max. Unit 2.5 V 0.30 0.35 0.40 0.45 Ω Ω Typ. Max. Unit ON (*) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS RDS(on) Static Drain-source On Resistance VGS = 10 V VGS = 5 V ID = 250 µA Min. Typ. 1 ID = 0.5 A ID = 0.5 A DYNAMIC Symbol 2/9 Parameter Test Conditions gfs (*) Forward Transconductance VDS = 15V Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V f = 1 MHz VGS = 0 ID = 0.5 A Min. 2 S 345 45 20 pF pF pF STQ1NE10L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Test Conditions Min. Typ. Max. Unit Turn-on Time Rise Time ID = 0.5 A VDD = 50 V VGS = 10 V RG = 4.7 Ω (Resistive Load, Figure 3) 11 12 ns ns Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD= 80 V ID= 1 A VGS= 5 V 7 1.5 3.5 nC nC nC SWITCHING OFF Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions Min. ID = 0.5 A VDD = 50 V VGS = 5 V RG = 4.7Ω, (Resistive Load, Figure 3) Typ. Max. 20 13 Unit ns ns SOURCE DRAIN DIODE Symbol Parameter ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) VSD (*) Forward On Voltage ISD = 1 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 1 A di/dt = 100A/µs Tj = 150°C VDD = 30 V (see test circuit, Figure 5) trr Qrr IRRM Test Conditions Min. Typ. VGS = 0 52 90 3.5 Max. Unit 1 4 A A 1.5 V ns nC A (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance Junction-lead 3/9 STQ1NE10L Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/9 STQ1NE10L Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics . . . 5/9 STQ1NE10L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 STQ1NE10L TO-92 MECHANICAL DATA mm inch DIM. MIN. TYP. MAX. MIN. TYP. MAX. A 4.58 5.33 0.180 0.210 B 4.45 5.2 0.175 0.204 C 3.2 4.2 0.126 0.165 D 12.7 E 0.500 1.27 F 0.4 G 0.35 0.050 0.51 0.016 0.020 0.14 7/9 STQ1NE10L 8/9 STQ1NE10L Information furnished is believed to be accurate and reliable. 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