STMICROELECTRONICS STN2NF06L

STN2NF06L
N-CHANNEL 60V - 0.1 Ω - 2A SOT-223
STripFET™ II POWER MOSFET
■
■
■
■
■
TYPE
VDSS
RDS(on)
ID
STN2NF06L
60 V
<0.12 Ω
2A
TYPICAL RDS(on) = 0.1 Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
AVALANCHE RUGGED TECHNOLOGY
LOW THRESHOLD DRIVE
2
1
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low onresistance, rugged avalanche characteristics and
less critical alignment steps therefore a remarkable manufacturing reproducibility.
2
3
SOT-223
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ DC MOTOR CONTROL (DISK DRIVES, etc.)
■ DC-DC & DC-AC CONVERTERS
■ SYNCHRONOUS RECTIFICATION
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VDGR
VGS
Value
Unit
Drain-source Voltage (VGS = 0)
Parameter
60
V
Drain-gate Voltage (RGS = 20 kΩ)
60
V
± 16
V
ID
Drain Current (continuous) at TC = 25°C
2
A
ID
Drain Current (continuous) at TC = 100°C
IDM(•)
Gate- source Voltage
1.2
A
Drain Current (pulsed)
8
A
Total Dissipation at TC = 25°C
3
W
Derating Factor
8
W/°C
dv/dt (2)
Peak Diode Recovery voltage slope
6
V/ns
EAS (3)
Single Pulse Avalanche Energy
200
mJ
Ptot(1)
Tstg
Tj
Storage Temperature
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area.
(1) Related to Rthj -l
November 2002
.
-55 to 150
°C
°C
(2) ISD ≤2A, di/dt ≤100A/µs, VDD ≤ V (BR)DSS, Tj ≤ TJMAX
(3) Starting T j = 25 oC, ID = 2A, VDD = 30V
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STN2NF06L
THERMAL DATA
Rthj-pcb
Rthj-pcb
Tl
Thermal Resistance Junction-PCB(1 inch2 copper board)
Thermal Resistance Junction-PCB (min. footprint)
Maximum Lead Temperature For Soldering Purpose
50
90
260
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 16 V
V(BR)DSS
Min.
Typ.
Max.
60
Unit
V
1
10
µA
µA
±100
nA
Max.
Unit
ON (*)
Symbol
Parameter
Test Conditions
VGS(th)
Gate Threshold Voltage
VDS = VGS
RDS(on)
Static Drain-source On
Resistance
VGS = 10 V
VGS = 5 V
ID = 250 µA
Min.
Typ.
1
ID = 1 A
ID = 1 A
V
0.1
0.12
0.12
0.14
Ω
Ω
Typ.
Max.
Unit
DYNAMIC
Symbol
2/8
Parameter
Test Conditions
gfs (*)
Forward Transconductance
VDS = 15 V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25V f = 1 MHz VGS = 0
ID = 1 A
Min.
3
S
360
55
25
pF
pF
pF
STN2NF06L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
tr
Qg
Qgs
Qgd
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Turn-on Time
Rise Time
ID = 1 A
VDD = 30 V
VGS = 4.5 V
RG = 4.7 Ω
(Resistive Load, Figure 3)
10
20
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD= 48 V ID= 2 A VGS= 5 V
5.6
1.2
2.6
7.6
nC
nC
nC
Typ.
Max.
Unit
ns
ns
SWITCHING OFF
Symbol
td(off)
tf
Parameter
Turn-off Delay Time
Fall Time
Test Conditions
Min.
ID = 1 A
VDD = 30 V
VGS = 4.5 V
RG = 4.7Ω,
(Resistive Load, Figure 3)
17
6
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
ISD
ISDM (•)
Source-drain Current
Source-drain Current (pulsed)
VSD (*)
Forward On Voltage
ISD = 2 A
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 2 A
di/dt = 100A/µs
Tj = 150°C
VDD = 20 V
(see test circuit, Figure 5)
trr
Qrr
IRRM
Test Conditions
Min.
Typ.
VGS = 0
28
31
2.2
Max.
Unit
2
8
A
A
1.3
V
ns
nC
A
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
Safe Operating Area
Thermal Impedance Junction-lead
3/8
STN2NF06L
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/8
STN2NF06L
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature.
.
.
5/8
STN2NF06L
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive
Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
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STN2NF06L
SOT-223 MECHANICAL DATA
mm
DIM.
mils
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
a
2.27
2.3
2.33
89.4
90.6
91.7
b
4.57
4.6
4.63
179.9
181.1
182.3
c
0.2
0.4
0.6
7.9
15.7
23.6
d
0.63
0.65
0.67
24.8
25.6
26.4
e1
1.5
1.6
1.7
59.1
63
66.9
e4
0.32
12.6
f
2.9
3
3.1
114.2
118.1
122.1
g
0.67
0.7
0.73
26.4
27.6
28.7
l1
6.7
7
7.3
263.8
275.6
287.4
l2
3.5
3.5
3.7
137.8
137.8
145.7
L
6.3
6.5
6.7
248
255.9
263.8
L
e1
l2
d
a
c
b
e4
f
l1
C
B
C
E
g
P008B
7/8
STN2NF06L
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
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