STS7NF60L N-CHANNEL 60V - 0.017 Ω - 7.5A SO-8 STripFET™ II POWER MOSFET ■ ■ ■ TYPE VDSS RDS(on) ID STS7NF60L 60 V < 0.0195 Ω 7.5 A TYPICAL RDS(on) = 0.017 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS ■ DC MOTOR DRIVE ■ DC-DC CONVERTERS ■ BATTERY MANAGEMENT IN NOMADIC EQUIPMENT ■ POWER MANAGEMENT IN PORTABLE/DESKTOP PCs SO-8 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Unit 60 V 60 V ± 16 V ID Drain Current (continuous) at TC = 25°C 7.5 A ID Drain Current (continuous) at TC = 100°C 4.7 A IDM(•) Ptot EAS (1) Drain Current (pulsed) 30 A Total Dissipation at TC = 25°C 2.5 W 350 mJ Single Pulse Avalanche Energy (•) Pulse width limited by safe operating area. April 2002 . Value (1) Starting T j = 25 oC, ID = 7.5 A VDD = 30 V 1/8 STS7NF60L THERMAL DATA Rthj-amb(#) Tj Tstg Thermal Resistance Junction-ambient Maximum Operating Junction Temperature Storage Temperature Max 50 150 -55 to 150 °C/W °C °C (#) When Mounted on 1 inch2 FR-4 board, 2 oz of Cu and t [ 10 sec. ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating TC = 125°C IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 16 V V(BR)DSS Min. Typ. Max. 60 Unit V 1 10 µA µA ±100 nA Max. Unit ON (*) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA RDS(on) Static Drain-source On Resistance VGS = 10 V VGS = 5 V ID = 3.5 A ID = 3.5 A Min. Typ. 1 V 0.017 0.019 0.0195 0.0215 Ω Ω Typ. Max. Unit DYNAMIC Symbol gfs Ciss Coss Crss 2/8 Parameter Test Conditions Forward Transconductance VDS = 15 V Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 ID = 3.5 A Min. 13 S 1700 300 100 pF pF pF STS7NF60L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON (*) Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time ID = 3.5 A VDD = 30 V RG = 4.7 Ω VGS = 4.5 V (Resistive Load, Figure 1) 15 27 Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD= 48V ID 7.5A VGS=4.5V 25 4.5 7 34 nC nC nC Typ. Max. Unit SWITCHING OFF (*) Symbol td(off) tf (see test circuit, Figure 2) Parameter Turn-off Delay Time Fall Time SOURCE DRAIN DIODE Test Conditions Min. ID = 3.5 A VDD = 30 V RG = 4.7Ω, VGS = 4.5 V (Resistive Load, Figure 1) 47 20 ns ns (*) Symbol Parameter ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) Test Conditions VSD Forward On Voltage ISD = 7.5 A trr Qrr Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt = 100A/µs ISD =7.5 A VDD = 20 V Tj = 150°C (see test circuit, Figure 3) IRRM ns ns Min. Typ. VGS = 0 55 110 3.9 Max. Unit 7.5 30 A A 1.2 V ns nC A (*) Pulse width [ 300 µs, duty cycle 1.5 %. (•)Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/8 STS7NF60L Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STS7NF60L Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature . . 5/8 STS7NF60L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STS7NF60L SO-8 MECHANICAL DATA mm DIM. MIN. TYP. A a1 MAX. MIN. TYP. 1.75 0.1 0.003 0.009 1.65 0.65 MAX. 0.068 0.25 a2 a3 inch 0.064 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 c1 45 (typ.) D 4.8 5.0 0.188 0.196 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 3.81 0.150 F 3.8 4.0 0.14 0.157 L 0.4 1.27 0.015 0.050 M S 0.6 0.023 8 (max.) 0016023 7/8 STS7NF60L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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