STN3NF06 N-CHANNEL 60V - 0.07Ω - 4A SOT-223 STripFET™ II POWER MOSFET TYPE STN3NF06 ■ ■ ■ ■ VDSS RDS(on) ID 60 V < 0.1 Ω 4A TYPICAL RDS(on) = 0.07 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED AVALANCHE RUGGED TECHNOLOGY 2 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS ■ DC-DC & DC-AC COVERTERS ■ DC MOTOR CONTROL (DISK DRIVERS, etc.) ■ SYNCHRONOUS RECTIFICATION 1 2 3 SOT-223 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Unit 60 V 60 V ± 20 V ID Drain Current (continuous) at TC = 25°C 4 A ID Drain Current (continuous) at TC = 100°C 2.9 A IDM(•) Ptot Drain Current (pulsed) 16 A Total Dissipation at TC = 25°C 3.3 W 0.026 W/°C Peak Diode Recovery voltage slope 10 V/ns Single Pulse Avalanche Energy 200 mJ -55 to 150 °C Derating Factor dv/dt (1) EAS (2) Tstg Tj Storage Temperature Operating Junction Temperature (•) Pulse width limited by safe operating area. December 2002 . Value (1) ISD ≤4A, di/dt ≤150A/µs, VDD ≤ V (BR)DSS, Tj ≤ T JMAX (2) Starting T j = 25 oC, ID = 4A, VDD = 30V 1/8 STN3NF06 Note: 1. THERMAL DATA Rthj-pcb Rthj-pcb Tl Thermal Resistance Junction-PCB (*) Thermal Resistance Junction-PCB (**) Maximum Lead Temperature For Soldering Purpose (for 10 sec. 1.6 mm from case) Max Max Typ 38 100 260 °C/W °C/W °C (*) When Mounted on FR-4 board with 1 inch2 pad, 2 oz of Cu and t [ 10 sec (**) When Mounted on minimum recommended footprint ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating TC = 125°C IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V V(BR)DSS Min. Typ. Max. 60 Unit V 1 10 µA µA ±100 nA ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA RDS(on) Static Drain-source On Resistance VGS = 10 V ID = 1.5 A Min. Typ. Max. Unit 2 3 4 V 0.07 0.10 Ω Typ. Max. Unit DYNAMIC Symbol 2/8 Parameter Test Conditions gfs (*) Forward Transconductance VDS = 15 V Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 ID = 1.5A Min. 3 S 315 70 30 pF pF pF STN3NF06 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time ID = 1.5 A VDD = 30 V RG = 4.7 Ω VGS = 10 V (Resistive Load, Figure 3) 7 18 Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 48V ID = 3A VGS = 10V 10 3.5 3.5 13 nC nC nC Typ. Max. Unit ns ns SWITCHING OFF Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions Min. ID = 1.5 A VDD = 30 V RG = 4.7Ω, VGS = 10 V (Resistive Load, Figure 3) 17 6 ns ns SOURCE DRAIN DIODE Symbol Parameter ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) VSD (*) Forward On Voltage ISD = 4 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt = 100A/µs ISD = 4 A VDD = 25 V Tj = 150°C (see test circuit, Figure 5) trr Qrr IRRM Test Conditions Min. Typ. VGS = 0 50 88 3.5 Max. Unit 4 16 A A 1.3 V ns nC A (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/8 STN3NF06 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STN3NF06 Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature. . . 5/8 STN3NF06 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STN3NF06 SOT-223 MECHANICAL DATA mm DIM. mils MIN. TYP. MAX. MIN. TYP. MAX. a 2.27 2.3 2.33 89.4 90.6 91.7 b 4.57 4.6 4.63 179.9 181.1 182.3 c 0.2 0.4 0.6 7.9 15.7 23.6 d 0.63 0.65 0.67 24.8 25.6 26.4 e1 1.5 1.6 1.7 59.1 63 66.9 e4 0.32 12.6 f 2.9 3 3.1 114.2 118.1 122.1 g 0.67 0.7 0.73 26.4 27.6 28.7 l1 6.7 7 7.3 263.8 275.6 287.4 l2 3.5 3.5 3.7 137.8 137.8 145.7 L 6.3 6.5 6.7 248 255.9 263.8 L e1 l2 d a c b e4 f l1 C B C E g P008B 7/8 STN3NF06 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 2001 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 8/8