STN749 ® MEDIUM CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR ■ ■ ■ ■ ■ Ordering Code Marking STN749 N749 VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE DC CURRENT GAIN, hFE > 100 3 A CONTINUOUS COLLECTOR CURRENT SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS AVAILABLE IN TAPE AND REEL PACKING APPLICATIONS POWER MANAGEMENT IN PORTABLE EQUIPMENT ■ VOLTAGE REGULATION IN BIAS SUPPLY CIRCUITS ■ SWITCHING REGULATOR IN BATTERY CHARGER APPLICATIONS ■ HEAVY LOAD DRIVER 2 1 2 3 SOT-223 ■ INTERNAL SCHEMATIC DIAGRAM DESCRIPTION The device is manufactured in low voltage PNP Planar Technology by using a "Base Island" layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage. ABSOLUTE MAXIMUM RATINGS Symbol Value Unit V CBO Collector-Base Voltage (I E = 0) -35 V V CEO Collector-Emitter Voltage (I B = 0) -25 V V EBO Emitter-Base Voltage (I C = 0) -5 V Collector Current -3 A IC Parameter I CM Collector Peak Current (t p < 5 ms) -6 A P tot Total Dissipation at T amb = 25 o C 1.6 W T stg Storage Temperature Tj March 2003 Max. Operating Junction Temperature -65 to 150 o C 150 o C 1/6 STN749 THERMAL DATA R t hj-amb • Thermal Resistance Junction-Ambient Max o 78 C/W • Device mounted on a PCB area of 1 cm . 2 ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions I CBO Collector Cut-off Current (I E = 0) V CB = -30 V V CB = -30 V I EBO Emitter Cut-off Current (I C = 0) V EB = -4 V V (BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) Min. T j = 100 o C Typ. Max. Unit -100 -10 nA µA -100 nA I C = -10 mA -25 V V (BR)CBO Collector-Base Breakdown Voltage (I E = 0) I C = -100 µA -35 V V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) I E = -100 µA -5 V V CE(sat) ∗ Collector-Emitter Saturation Voltage I C = -1A I C = -3A I B = -100 mA I B = -300 mA -0.3 -0.6 V V V BE(sat) ∗ Base-Emitter Saturation Voltage I C = -1 A I B = -100 mA -1.25 V Base-Emitter Turn-On Voltage I C = -1 A V CE = -2 V -1 V DC Current Gain IC IC IC IC V BE(on) h FE ∗ = = = = ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 % 2/6 -50 mA -1 A -2 A -6 A V CE = -2 V V CE = -2 V V CE = -2 V V CE = -2V 70 100 75 15 300 STN749 DC Current Gain DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Switching Times Resistive Load Switching Times Resistive Load 3/6 STN749 Figure 1: Resistive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 4/6 STN749 SOT-223 MECHANICAL DATA mm DIM. MIN. TYP. A inch MAX. MIN. TYP. 1.80 MAX. 0.071 B 0.60 0.70 0.80 0.024 0.027 0.031 B1 2.90 3.00 3.10 0.114 0.118 0.122 c 0.24 0.26 0.32 0.009 0.010 0.013 D 6.30 6.50 6.70 0.248 0.256 0.264 e 2.30 0.090 e1 4.60 0.181 E 3.30 3.50 3.70 0.130 0.138 0.146 H 6.70 7.00 7.30 0.264 0.276 0.287 10o V A1 10o 0.02 P008B 5/6 STN749 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2003 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 6/6