STX790A ® MEDIUM CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR ■ ■ ■ ■ ■ Type Marking STX790A X790A VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE DC CURRENT GAIN, hFE > 100 3 A CONTINUOUS COLLECTOR CURRENT 60 V BREAKDOWN VOLTAGE (V(BR)CER) TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY TO-92 APPLICATIONS ■ SWITCHING REGULATOR IN BATTERY CHARGER APPLICATIONS ■ SUITABLE FOR AUTOMOTIVE APPLICATIONS (V(BR)CER > 60V) ■ VOLTAGE REGULATION IN BIAS SUPPLY CIRCUITS ■ HEAVY LOAD DRIVER INTERNAL SCHEMATIC DIAGRAM DESCRIPTION The device is manufactured in low voltage PNP Planar Technology by using a "Base Island" layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage. ABSOLUTE MAXIMUM RATINGS Symbol Value Unit V CBO Collector-Base Voltage (I E = 0) -60 V V CER Collector-Emitter Voltage (R BE = 47Ω) Emitter-Base Voltage (I C = 0) -60 V -5 V -3 A V EBO IC Parameter Collector Current I CM Collector Peak Current (t p < 5 ms) -6 A P tot Total Dissipation at T amb = 25 o C 0.9 W T stg Storage Temperature Tj March 2003 Max. Operating Junction Temperature -65 to 150 o C 150 o C 1/6 STX790A THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max o 44.6 139 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions I CBO Collector Cut-off Current (I E = 0) V CB = -30 V V CB = -30 V I EBO Emitter Cut-off Current (I C = 0) V EB = -4 V Min. Typ. T j = 100 o C Max. Unit -0.1 -10 µA µA -1 µA V (BR)CER ∗ Collector-Emitter Breakdown Voltage (R BE = 47Ω) I C = -10 mA -60 V V (BR)CBO Collector-Base Breakdown Voltage (I E = 0) I C = -100 µA -60 V V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) I E = -100 µA -5 V V CE(sat) ∗ Collector-Emitter Saturation Voltage IC IC IC IC IC V BE(sat) ∗ Base-Emitter Saturation Voltage I C = -1 A I B = -10 mA Base-Emitter Turn-On Voltage I C = -1 A V CE = -2 V DC Current Gain IC IC IC IC IC V BE(on) h FE ∗ = = = = = = = = = = IB IB IB IB IB -10 mA -500 mA -1 A -2 A -3 A = = = = = -0.15 -0.3 -0.5 -0.7 -0.9 V V V V V -0.8 -1.0 V -0.8 -1 V 200 200 300 300 -5mA -10mA -20mA -30mA -30mA T j = 100 o C V CE = -2 V V CE = -2 V V CE = -2 V V CE = -1 V V CE = -1V fT Transition Frequency I C = -50 mA td tr ts tf RESISTIVE LOAD Delay Time RiseTime StorageTime Fall Time I C = -3 A I B1 = - I B2 = -60 mA V CC = -20 V (see figure 1) ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 % 2/6 -0.5A -1A -2A -3A -3A V CE = -5V f = 50MHz 100 100 100 100 90 160 130 100 MHz 180 160 250 80 220 210 300 100 ns ns ns ns STX790A DC Current Gain DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Switching Times Resistive Load Switching Times Resistive Load 3/6 STX790A Figure 1: Resistive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 4/6 STX790A TO-92 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.32 4.95 0.170 0.195 b 0.36 0.51 0.014 0.020 D 4.45 4.95 0.175 0.194 E 3.30 3.94 0.130 0.155 e 2.41 2.67 0.095 0.105 e1 1.14 1.40 0.045 0.055 L 12.70 15.49 0.500 0.609 R 2.16 2.41 0.085 0.094 S1 1.14 1.52 0.045 0.059 W 0.41 0.56 0.016 0.022 V 4 degree 6 degree 4 degree 6 degree 5/6 STX790A Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2003 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 6/6