STMICROELECTRONICS STD888

STD888
®
HIGH CURRENT, HIGH PERFORMANCE,
LOW VOLTAGE PNP TRANSISTOR
■
■
■
■
■
Ordering Code
Marking
STD888
D888
VERY LOW COLLECTOR TO EMITTER
SATURATION VOLTAGE
DC CURRENT GAIN, hFE > 100
5 A CONTINUOUS COLLECTOR CURRENT
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL (Suffix
"T4")
APPLICATIONS
■ POWER MANAGEMENT IN PORTABLE
EQUIPMENT
■ VOLTAGE REGULATION IN BIAS SUPPLY
CIRCUITS
■ SWITCHING REGULATOR IN BATTERY
CHARGER APPLICATIONS
■ HEAVY LOAD DRIVER
3
1
DPAK
TO-252
(Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
DESCRIPTION
The device is manufactured in low voltage PNP
Planar Technology by using a "Base Island"
layout.
The resulting Transistor shows exceptional high
gain performance coupled with very low
saturation voltage.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V CBO
Collector-Base Voltage (I E = 0)
-60
V
V CEO
Collector-Emitter Voltage (I B = 0)
-30
V
V EBO
Emitter-Base Voltage (I C = 0)
-6
V
Collector Current
-5
A
-10
A
IC
I CM
Collector Peak Current (t p < 5 ms)
o
P tot
Total Dissipation at T C = 25 C
T stg
Storage Temperature
Tj
March 2003
Max. Operating Junction Temperature
15
W
-65 to 150
o
C
150
o
C
1/6
STD888
THERMAL DATA
R thj-case • Thermal Resistance Junction-Case
Max
o
8.33
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
I CBO
Collector Cut-off
Current (I E = 0)
V CB = -30 V
V CB = -30 V
I EBO
Emitter Cut-off Current
(I C = 0)
V EB = -6 V
V (BR)CEO ∗ Collector-Emitter
Breakdown Voltage
(I B = 0)
Min.
Typ.
T j = 100 o C
Max.
Unit
-10
-1
nA
µA
-10
nA
I C = -10 mA
-30
V
V (BR)CBO
Collector-Base
Breakdown Voltage
(I E = 0)
I C = -100 µA
-60
V
V (BR)EBO
Emitter-Base
Breakdown Voltage
(I C = 0)
I E = -100 µA
-6
V
V CE(sat) ∗
Collector-Emitter
Saturation Voltage
IC
IC
IC
IC
IC
IC
V BE(sat) ∗
Base-Emitter
Saturation Voltage
DC Current Gain
h FE ∗
td
tr
ts
tf
RESISTIVE LOAD
Delay Time
RiseTime
StorageTime
Fall Time
I B = -5 mA
I B = -50 mA
I B = -250 mA
I B = -250 mA
I B = -400 mA
I B = -500 mA
-0.15
-0.25
-0.70
-0.70
-1
-1.5
V
V
V
V
V
V
I C = -2 A
I C = -6 A
I B = -50 mA
I B = -250 mA
-1.1
-1.4
V
V
IC
IC
IC
IC
Tj
IC
IC
V CE = -1 V
V CE = -1 V
V CE = -1 V
V CE = -1V
=
=
=
=
=
=
=
=
=
=
=
=
=
-10 mA
-500 mA
-5 A
-5 A
100 o C
-8 A
-10 A
V CE = -1 V
V CE = -1 V
I C = -3 A
I B1 = - I B2 = -60 mA
V CC = -20 V
(see figure 1)
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 %
2/6
-500 mA
-2 A
-5 A
-6 A
-8 A
-10 A
150
150
75
200
200
100
75
40
15
100
55
35
180
160
250
80
300
220
210
300
100
ns
ns
ns
ns
STD888
DC Current Gain
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Switching Times Resistive Load
Switching Times Resistive Load
3/6
STD888
Figure 1: Resistive Load Switching Test Circuit.
1) Fast electronic switch
2) Non-inductive Resistor
4/6
STD888
TO-252 (DPAK) MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
2.20
2.40
0.087
0.094
A1
0.90
1.10
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.213
C
0.45
0.60
0.018
0.024
C2
0.48
0.60
0.019
0.024
D
6.00
6.20
0.236
0.244
E
6.40
6.60
0.252
0.260
G
4.40
4.60
0.173
0.181
H
9.35
10.10
0.368
0.398
L2
0.8
0.031
L4
0.60
1.00
0.024
0.039
V2
0o
8o
0o
0o
P032P_B
5/6
STD888
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2003 STMicroelectronics – Printed in Italy – All Rights Reserved
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