STP12PF06 STF12PF06 P-CHANNEL 60V - 0.18 Ω - 12A TO-220/TO-220FP STripFET™ II POWER MOSFET Table 1: General Features Figure 1:Package TYPE VDSS RDS(on) ID STP12PF06 STF12PF06 60 V 60 V < 0.20 Ω < 0.20 Ω 12 A 12 A ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.18 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE APPLICATION ORIENTED CHARACTERIZATION 3 1 3 2 1 TO-220 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility 2 TO-220FP Figure 2: Internal Schematic Diagram APPLICATIONS ■ MOTOR CONTROL ■ DC-DC & DC-AC CONVERTERS Table 2: Order Codes PART NUMBER STP12PF06 STF12PF06 MARKING P12PF06 F12PF06 PACKAGE TO-220 TO-220FP PACKAGING TUBE TUBE Table 3: ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STP20PF06 VDS VDGR VGS ID ID IDM(•) Ptot dv/dt (1) EAS (2) Tstg Tj Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature (•) Pulse width limited by safe operating area. NOTE:For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed. March 2005 Unit STF20PF06 60 60 ± 20 6 200 V V V A A A W W/°C V/ns mJ -55 to 175 °C 12 8.4 48 60 0.4 8 5.6 32 225 0.17 (1) ISD ≤12A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX (2) Starting Tj = 25 oC, ID = 12A, VDD= 25V Rev. 2.0 1/10 STP12PF06 STF12PF06 Table 4: THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Tl Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max TO-220 TO-220FP 2.5 5.35 62.5 300 °C/W °C/W °C ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) Table 5: OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating TC = 125°C IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V V(BR)DSS Min. Typ. Max. 60 Unit V 1 10 µA µA ±100 nA Table 6: ON (*) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA RDS(on) Static Drain-source On Resistance VGS = 10 V ID = 10 A Min. Typ. Max. Unit 2 3.4 4 V 0.18 0.20 Ω Min. Typ. Max. Unit 2.5 6 S 850 230 75 pF pF pF Table 7: DYNAMIC Symbol 2/10 Parameter Test Conditions gfs (2) Forward Transconductance VDS = 15 V Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V f = 1 MHz VGS = 0 ID = 6 A STP12PF06 STF12PF06 ELECTRICAL CHARACTERISTICS (continued) Table 8: SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 30 V ID = 6 A VGS = 10 V RG = 4.7 Ω (Resistive Load, Figure 19) 20 40 Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD= 48 V ID= 12 A VGS= 10 V 16 4 6 21 nC nC nC Typ. Max. Unit ns ns Table 9: SWITCHING OFF Symbol td(off) tf Parameter Test Conditions Min. VDD = 30 V ID = 6 A VGS = 10 V RG = 4.7Ω, (Resistive Load, Figure 19) Turn-off Delay Time Fall Time 40 10 ns ns Table 10: SOURCE DRAIN DIODE Symbol Parameter ISD ISDM (1) Source-drain Current Source-drain Current (pulsed) VSD (2) Forward On Voltage ISD = 12 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 12 A di/dt = 100A/µs Tj = 150°C VDD = 30 V (see test circuit, Figure 21) trr Qrr IRRM (1 )Pulse width limited by safe operating area. (2) Pulsed: Pulse duration = 300 µs, duty cycle Test Conditions Min. Typ. VGS = 0 Max. Unit 10 40 A A 2.5 V 100 260 5.2 ns nC A 1.5 %. Figure 3: Safe Operating Area for TO-220 Figure 4: Safe Operating Area for TO-220FP 3/10 STP12PF06 STF12PF06 Figure 5: Thermal Impedance Figure 6: Thermal Impedance for TO-220FP Figure 7: Output Characteristics Figure 8: Transfer Characteristics Figure 9: Transconductance Figure 10: Static Drain-source On Resistance 4/10 STP12PF06 STF12PF06 Figure 11: Gate Charge vs Gate-source Voltage Figure 12: Capacitance Variations Figure 13: Normalized Gate Threshold Voltage vs Temperature Figure 14: Normalized on Resistance vs Temperature Figure 15: Source-drain Diode Forward Characteristics Figure 16: Normalized Breakdown Voltage Temperature 5/10 STP12PF06 STF12PF06 Figure 17: Unclamped Inductive Load Test Circuit Figure 18: Unclamped Inductive Waveform Figure 19: Switching Times Test Circuits For Resistive Load Figure 20: Gate Charge test Circuit Figure 21: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/10 STP12PF06 STF12PF06 TO-220 MECHANICAL DATA DIM. mm. MIN. TYP. inch. MAX. MIN. A 4.4 4.6 0.173 TYP. 0.181 TYP. C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.40 2.70 0.094 0.106 H2 10 10.40 0.393 0.409 L2 16.40 L3 0.645 28.90 1.137 L4 13 14 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.260 L9 3.50 3.93 0.137 0.154 DIA 3.75 3.85 0.147 0.151 7/10 STP12PF06 STF12PF06 TO-220FP MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L3 L3 L6 F2 H G G1 ¯ F F1 L7 1 2 3 L2 8/10 L4 STP12PF06 STF12PF06 Table 11:Revision History Date Revision Description of Changes March 2005 1.0 FIRST ISSUE March 2005 2.0 MINOR REVISION 9/10 STP12PF06 STF12PF06 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics All other names are the property of their respective owners. © 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco -Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America. www.st.com 10/10