STB140NF55 STP140NF55 N-CHANNEL 55V - 0.0065 Ω - 80A TO-220/D²PAK STripFET™ II POWER MOSFET Table 1: General Features ■ Figure 1:Package TYPE VDSS RDS(on) ID STB140NF55 STP140NF55 55 V 55 V < 0.008 Ω < 0.008 Ω 80 A 80 A TYPICAL RDS(on) = 0.0065 Ω DESCRIPTION This Power Mosfet is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS MOTOR CONTROL ■ HIGH CURRENT, SWITCHING APPLICATIONS ■ AUTOMOTIVE ENVIRONMENT 3 1 3 D2PAK TO-263 (Suffix “T4”) 1 2 TO-220 ■ Figure 2: Internal Schematic Diagram Table 2: Order Codes Part Number STB140NF55T4 STP140NF55 MARKING B140NF55 P140NF55 PACKAGE D²PAK TO-220 PACKAGING TAPE & REEL TUBE Table 3:ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID ID IDM(•) Ptot dv/dt(1) EAS(2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature (•) Pulse width limited by safe operating area. (**) Current Limited by Package December 2004 Value 55 ± 20 80 80 320 300 2 10 1.3 Unit V V A A A W W/°C V/ns mJ -55 to 175 °C (1) ISD ≤80A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX (2) Starting Tj = 25 oC, ID = 40A, VDD = 30V Rev. 2 1/11 STB140NF55 STP140NF55 Table 4: THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max °C/W °C/W °C 0.5 62.5 300 ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) Table 5: OFF Symbol V(BR)DSS Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating TC = 125°C IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20 V Min. Typ. Max. 55 Unit V 1 10 µA µA ±100 nA Table 6: ON (*) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA RDS(on) Static Drain-source On Resistance VGS = 10 V ID = 40 A Min. Typ. Max. Unit 2 3 4 V 0.0065 0.008 Ω Typ. Max. Unit Table 7: DYNAMIC Symbol 2/11 Parameter Test Conditions gfs (*) Forward Transconductance VDS = 25 V Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V f = 1 MHz VGS = 0 ID = 40 A Min. 100 S 5300 1000 290 pF pF pF STB140NF55 STP140NF55 ELECTRICAL CHARACTERISTICS (continued) Table 8: SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time ID = 40 A VDD = 27.5 V VGS = 10 V RG = 4.7 Ω (Resistive Load, Figure 3) 30 150 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD= 44V ID= 80A VGS= 10V 142 27 55 nC nC nC Table 9: SWITCHING OFF Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions Min. VDD = 27.5 V ID = 40 A VGS = 10 V RG = 4.7 Ω (Resistive Load, Figure 3) Typ. Max. 125 45 Unit ns ns Table 10: SOURCE DRAIN DIODE Symbol Parameter ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) VSD (*) Forward On Voltage ISD = 80 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 80 A di/dt = 100A/µs Tj = 150°C VDD = 20 V (see test circuit, Figure 5) trr Qrr IRRM Test Conditions Min. Typ. VGS = 0 90 275 6.5 Max. Unit 80 320 A A 1.5 V ns µC A (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limited by safe operating area. Figure 3: Safe Operating Area Figure 4: Thermal Impedance 3/11 STB140NF55 STP140NF55 Figure 5: Output Characteristics Figure 6: Transfer Characteristics Figure 7: Transconductance Figure 8: Static Drain-source On Resistance Figure 9: Gate Charge vs Gate-source Voltage Figure 10: Capacitance Variations 4/11 STB140NF55 STP140NF55 Figure 11: Normalized Gate Threshold Voltage vs Temperature Figure 13: Source-drain Diode Forward Characteristics Figure 12: Normalized on Resistance vs Temperature Figure 14: Normalized Breakdown Voltage vs Temperature. . . . . 5/11 STB140NF55 STP140NF55 Figure 15: Unclamped Inductive Load Test Cir- Figure 16: Unclamped Inductive Waveform Figure cuit 17: Switching Times Test Circuits For Resistive Load Figure 18: Gate Charge test Circuit Figure 19: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/11 STB140NF55 STP140NF55 TO-220 MECHANICAL DATA DIM. mm. MIN. TYP. inch. MAX. MIN. TYP. TYP. A 4.4 4.6 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.40 2.70 0.094 0.106 H2 10 10.40 0.393 0.409 L2 16.40 0.645 L3 28.90 1.137 L4 13 14 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.260 L9 3.50 3.93 0.137 0.154 DIA 3.75 3.85 0.147 0.151 7/11 STB140NF55 STP140NF55 D2PAK MECHANICAL DATA DIM. mm. MIN. MAX. MIN. TYP. TYP. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.028 0.037 B2 1.14 1.7 0.045 0.067 C 0.45 0.6 0.018 0.024 C2 1.21 1.36 0.048 0.054 D 8.95 9.35 0.352 0.368 10.4 0.394 D1 E 8 10 E1 G 0.315 8.5 0.409 0.334 4.88 5.28 0.192 0.208 L 15 15.85 0.591 0.624 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.069 M 2.4 3.2 0.094 0.126 8° 0° R V2 8/11 TYP. inch. 0.4 0° 0.015 8° STB140NF55 STP140NF55 D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A inch MAX. MIN. 330 B 1.5 C 12.8 D 20.2 G 24.4 N 100 T MAX. 12.992 0.059 13.2 0.504 0.520 0.795 26.4 0.960 1.039 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 0.161 P0 3.9 4.1 0.153 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0075 0.082 R 50 T 0.25 0.35 .0.0098 1.574 0.0137 W 23.7 24.3 0.933 0.956 * on sales type 9/11 STB140NF55 STP140NF55 Table 11:Revision History 10/11 Date Revision 07-Nov-2004 2 Description of Changes updated fig.14 STB140NF55 STP140NF55 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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