STP14NF06 N-CHANNEL 60V - 0.1Ω - 14A TO-220 STripFET™ POWER MOSFET ■ ■ ■ ■ TYPE VDSS RDS(on) ID STP14NF10 60 V < 0.12 Ω 14 A TYPICAL RDS(on) = 0.1Ω EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE AT 100 °C APPLICATION ORIENTED CHARACTERIZATION 3 1 2 TO-220 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ DC-DC & DC-AC CONVERTERS ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SOLENOID AND RELAY DRIVERS ■ AUTOMOTIVE ENVIRONMENT ABSOLUTE MAXIMUM RATINGS Symbol Value Unit Drain-source Voltage (VGS = 0) 60 V Drain-gate Voltage (RGS = 20 kΩ) 60 V Gate- source Voltage ±20 V ID Drain Current (continuos) at TC = 25°C 14 A ID Drain Current (continuos) at TC = 100°C 10 A Drain Current (pulsed) 56 A Total Dissipation at TC = 25°C 45 W Derating Factor VDS VDGR VGS IDM (●) PTOT Parameter 0.3 W/°C dv/dt (1) Peak Diode Recovery voltage slope 6 V/ns EAS (2) Single Pulse Avalanche Energy 50 mJ Tstg Tj Storage Temperature Max. Operating Junction Temperature (●) Pulse width limited by safe operating area December 2000 –65 to 175 °C 175 °C (1) I SD ≤7A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, T j ≤ TJMAX. (2) Starting T j = 25°C, I D = 114A, VDD = 15V 1/8 STP14NF06 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 3.33 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C Tl ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Test Conditions Min. Typ. Max. 60 Unit Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 V Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating 1 µA VDS = Max Rating, TC = 125 °C 10 µA Gate-body Leakage Current (VDS = 0) VGS = ±20V ±100 nA Max. Unit ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 7 A ID(on) On State Drain Current VDS > ID(on) x RDS(on)max, VGS = 10V Min. Typ. 2 V 0.10 0.12 14 Ω A DYNAMIC Symbol gfs (1) 2/8 Parameter Forward Transconductance Test Conditions VDS > ID(on) x RDS(on)max, ID = 7 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. Max. Unit 7 S Ciss Input Capacitance 361 pF Coss Output Capacitance 54 pF Crss Reverse Transfer Capacitance 21 pF STP14NF06 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions Min. Typ. Max. Unit VDD = 30V, ID = 7 A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) 12.5 ns 32 ns VDD = 48 V, ID = 14 A, VGS = 10V 11.2 3.7 3.2 15 nC nC nC Typ. Max. Unit SWITCHING OFF Symbol td(off) tf Parameter Turn-off-Delay Time Fall Time Test Conditions Min. VDD = 30 V, ID = 7 A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 3) 30 9.5 ns ns SOURCE DRAIN DIODE Symbol ISD Parameter Test Conditions Source-drain Current (pulsed) VSD (2) Forward On Voltage ISD = 14 A, VGS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 14 A, di/dt = 100A/µs, VDD = 30 V, Tj = 150°C (see test circuit, Figure 5) IRRM Typ. Source-drain Current ISDM (1) trr Qrr Min. 38 61 3.2 Max. Unit 14 A 56 A 1.3 V ns nC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area Thermal Impedence 3/8 STP14NF06 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STP14NF06 Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 STP14NF06 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STP14NF06 TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L4 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 L4 P011C 7/8 STP14NF06 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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