STP22NF03L N-CHANNEL 30V - 0.038Ω - 22A TO-220 STripFET™ POWER MOSFET TYPE STP22NF03L ■ ■ ■ ■ VDSS RDS(on) ID 30V <0.05Ω 22A TYPICAL RDS(on) = 0.038Ω EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE AT 100°C APPLICATION ORIENTED CHARACTERIZATION 3 1 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. 2 TO-220 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS DC-DC & DC-AC CONVERTERS ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SOLENOID AND RELAY DRIVERS ■ AUTOMOTIVE ENVIRONMENT ■ ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS Parameter Value Unit Drain-source Voltage (VGS = 0) 30 V Drain-gate Voltage (RGS = 20 kΩ) 30 V Gate- source Voltage ±15 V ID Drain Current (continuos) at TC = 25°C 22 A ID Drain Current (continuos) at TC = 100°C 16 A Drain Current (pulsed) 88 A IDM (●) PTOT Total Dissipation at TC = 25°C 45 W Derating Factor 0.3 W/°C 6 V/ns 200 mJ dv/dt (1) Peak Diode Recovery voltage slope EAS (2) Single Pulse Avalanche Energy Tstg Tj Storage Temperature Max. Operating Junction Temperature –65 to 175 °C 175 °C (●) Pulse width limited by safe operating area (1) I SD ≤10A, di/dt ≤300A/µs, VDD ≤ V (BR)DSS, Tj ≤ T JMAX. (2) Starting T j=25°C, ID=11A, V DD=15V Aug 2000 1/8 STP22NF03L THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 3.33 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C Tl ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS Parameter Drain-source Breakdown Voltage IDSS Zero Gate Voltage Drain Current (VGS = 0) IGSS Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 Min. Typ. Max. 30 Unit V VDS = Max Rating 1 µA VDS = Max Rating, TC = 125 °C 10 µA ±100 nA Max. Unit VGS = ±20V ON (1) Symbol Parameter Test Conditions Min. Typ. VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 11 A 0.038 0.05 VGS = 5 V, ID = 11 A 0.045 0.06 ID(on) On State Drain Current VDS > ID(on) x RDS(on)max, VGS = 10V 1 V 22 Ω A DYNAMIC Symbol gfs (1) 2/8 Parameter Forward Transconductance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Test Conditions VDS > ID(on) x RDS(on)max, ID =11A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. Max. Unit 7 S 330 pF 90 pF 40 pF STP22NF03L ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Parameter Turn-on Delay Time Rise Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Test Conditions Min. VDD = 15V, ID = 11A RG = 4.7Ω VGS = 4.5V (see test circuit, Figure 3) VDD = 24V, ID = 22A, VGS = 10V Typ. Max. Unit 11 ns 100 ns 6.5 9 nC 3.6 nC 2 nC SWITCHING OFF Symbol td(off) tf Parameter Turn-off-Delay Time Test Conditions Min. VDD = 15V, ID = 11A, RG = 4.7Ω, VGS = 4.5V (see test circuit, Figure 3) Fall Time Typ. Max. Unit 25 ns 22 ns Off-voltage Rise Time Vclamp =24V, ID =22A RG = 4.7Ω, VGS = 4.5V 22 ns tf Fall Time (see test circuit, Figure 5) 55 ns tc Cross-over Time 75 ns tr(off) SOURCE DRAIN DIODE Symbol ISD Parameter Test Conditions Min. Typ. Source-drain Current ISDM (1) Source-drain Current (pulsed) VSD (2) Forward On Voltage ISD = 22A, VGS = 0 trr Reverse Recovery Time ISD = 22A, di/dt = 100A/µs, VDD = 15V, Tj = 150°C (see test circuit, Figure 5) Qrr IRRM Max. Unit 22 A 88 A 1.5 V 30 ns Reverse Recovery Charge 18 nC Reverse Recovery Current 1.2 A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area Thermal Impedence 3/8 STP22NF03L Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STP22NF03L Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 STP22NF03L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STP22NF03L TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L4 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 L4 P011C 7/8 STP22NF03L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. 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