STP45N10 STP45N10FI ® N - CHANNEL 100V - 0.027Ω - 45A - TO-220/TO-220FI POWER MOS TRANSISTOR TYPE STP45N10 STP45N10FI ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS(on) ID 100 V 100 V < 0.035 Ω < 0.035 Ω 45 A 24 A TYPICAL RDS(on) = 0.027 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175 oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION 3 1 3 2 1 TO-220 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING ■ SOLENOID AND RELAY DRIVERS ■ DC-DC & DC-AC CONVERTERS ■ AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMP DRIVERS. Etc.) 2 ISOWATT220 ■ INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STP45N10 V DS V DGR V GS Unit STP45N10FI Drain-source Voltage (V GS = 0) 100 V Drain- gate Voltage (R GS = 20 kΩ) 100 V ± 25 V Gate-source Voltage o ID Drain Current (continuous) at T c = 25 C ID o 24 A 32 17 A Drain Current (pulsed) 180 180 A Total Dissipation at T c = 25 o C 150 45 W Derating Factor 1 0.3 W/ o C V ISO Insulation Withstand Voltage (DC) T stg Storage Temperature IDM (•) P tot Tj June 1998 Drain Current (continuous) at T c = 100 C 45 Max. Operating Junction Temperature 2000 V -65 to 175 o C 175 o C 1/10 STP45N10/FI THERMAL DATA R thj-case Thermal Resistance Junction-case R thj-amb R thc-sink Tl Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose TO220 ISOWATT220 1 3.33 Max 62.5 0.5 300 o C/W o C/W C/W o C o AVALANCHE CHARACTERISTICS Symbol Parameter I AR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) E AS Single Pulse Avalanche Energy (starting T j = 25 o C, I D = I AR , VDD = 25 V) Max Value Unit 45 A 400 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS I DSS I GSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µA V GS = 0 Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 V DS = Max Rating x 0.8 Gate-Source Leakage Current (V DS = 0) Min. Typ. Max. 100 Unit V T c = 125 o C V GS = ± 20 V 10 1 50 µA µA ± 100 mA ON (∗) Symbol Parameter V GS(th) Gate Threshold Voltage R DS(on) Static Drain-source On Resistance ID(on) Test Conditions Min. Typ. Max. Unit V DS = VGS I D = 250 µA 2 3 4 V V GS = 10 V V GS = 10 V I D = 22.5 A I D = 22.5 A T c = 100 o C 0.027 0.035 0.07 Ω Ω On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V 45 A DYNAMIC Symbol g fs (∗) C iss C oss C rss 2/10 Parameter Test Conditions Forward Transconductance V DS > I D(on) x R DS(on)max I D = 22.5 A Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V V GS = 0 f = 1 MHz Min. Typ. 20 40 4100 600 150 Max. Unit S 5200 800 220 pF pF pF STP45N10/FI ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr (di/dt)on Qg Q gs Q gd Parameter Test Conditions Min. I D = 22.5 Typ. Max. Unit 25 75 35 105 ns ns Turn-on Time Rise Time V DD = 50 V A R G = 4.7 Ω V GS = 10 V Turn-on Current Slope V DD = 80 V R G = 47 Ω I D = 45 A V GS = 10 V 400 Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 80 V V GS = 10 V 120 20 50 170 nC nC nC Typ. Max. Unit 30 35 65 45 50 95 ns ns ns Typ. Max. Unit 45 180 A A 1.5 V I D =45 A A/µs SWITCHING OFF Symbol t r(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 80 V R G = 4.7 Ω Min. I D = 45 A V GS = 10 V SOURCE DRAIN DIODE Symbol Parameter Test Conditions I SD I SDM (•) Source-drain Current Source-drain Current (pulsed) V SD (∗) Forward On Voltage I SD = 45 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 45 A V DD = 30 V t rr Q rr I RRM Min. V GS = 0 di/dt = 100 A/µs o T j = 150 C 200 ns 0.14 µC 14 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Area for TO-220 Safe Operating Area for ISOWATT220 3/10 STP45N10/FI Thermal Impedance for TO-220 Thermal Impedance for ISOWATT220 Derating Curve for TO-220 Derating Curve for ISOWATT220 Output Characteristics Transfer Characteristics 4/10 STP45N10/FI Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature 5/10 STP45N10/FI Turn-on Current Slope Turn-off Drain-source Voltage Slope Cross-over Time Switching Safe Operating Area Accidental Overload Area Source-drain Diode Forward Characteristics 6/10 STP45N10/FI Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 7/10 STP45N10/FI TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 L2 0.409 16.4 L4 0.645 13.0 14.0 0.511 0.551 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L5 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 8/10 L4 P011C STP45N10/FI ISOWATT220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.4 0.7 0.015 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 L2 0.409 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L3 L3 L6 F2 H G G1 ¯ F F1 L7 1 2 3 L2 L4 P011G 9/10 STP45N10/FI Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 1998 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. . 10/10