STMICROELECTRONICS STP4NB80

STP4NB80
STP4NB80FP
®
N - CHANNEL 800V - 3Ω - 4A - TO-220/TO-220FP
PowerMESH MOSFET
TYPE
STP4NB80
STP4NB80FP
■
■
■
■
■
V DSS
R DS(on)
ID
800 V
800 V
3.3 Ω
3.3 Ω
4A
4A
TYPICAL RDS(on) = 3 Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
3
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
1
3
2
1
TO-220
2
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
■
ABSOLUTE MAXIMUM RATINGS
Symbol
V DS
V DGR
V GS
ID
ID
IDM (•)
P tot
dv/dt(1 )
V ISO
T stg
Tj
Parameter
Value
STP4NB80
STP4NB80FP
Unit
Drain-source Voltage (V GS = 0)
800
V
Drain- gate Voltage (R GS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at T c = 25 o C
800
V
± 30
V
A
4
4(*)
Drain Current (continuous) at T c = 100 C
2.4
2.4(*)
A
Drain Current (pulsed)
Total Dissipation at T c = 25 o C
16
100
16
35
A
W
Derating Factor
Peak Diode Recovery voltage slope
0.8
4.5
0.28
4.5
W/ C
V/ns
Insulation Withstand Voltage (DC)
Storage Temperature

o
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
(*) Limited only by maximum temperature allowed
September 2001
2500
o
V
C
-65 to 150
o
150
o
C
(1) ISD ≤4 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/9
STP4NB80/FP
THERMAL DATA
R thj-case
Thermal Resistance Junction-case
R thj-amb
R thc-sink
Tl
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
TO-220
TO220-FP
1.25
3.6
Max
62.5
0.5
300
o
C/W
o
C/W
C/W
o
C
o
AVALANCHE CHARACTERISTICS
Symbol
Parameter
I AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T j max)
E AS
Single Pulse Avalanche Energy
(starting T j = 25 o C, I D = I AR , V DD = 50 V)
Max Value
Unit
4
A
230
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V (BR)DSS
Parameter
Drain-source
Breakdown Voltage
Test Conditions
I D = 250 µA
Zero Gate Voltage
V DS = Max Rating
Drain Current (VGS = 0) V DS = Max Rating
I GSS
Gate-body Leakage
Current (V DS = 0)
Typ.
Max.
800
VGS = 0
I DSS
Min.
Unit
V
T c = 125 o C
V GS = ± 30 V
1
50
µA
µA
± 100
nA
Max.
Unit
ON (∗)
Symbol
Parameter
Test Conditions
V GS(th)
Gate Threshold Voltage V DS = VGS
ID = 250 µA
R DS(on)
Static Drain-source On
Resistance
ID = 2 A
ID(on)
V GS = 10V
On State Drain Current V DS > I D(on) x R DS(on)max
V GS = 10 V
Min.
Typ.
3
4
5
V
3
3.3
Ω
4
A
DYNAMIC
Symbol
g fs (∗)
C iss
C oss
C rss
2/9
Parameter
Test Conditions
Forward
Transconductance
V DS > I D(on) x R DS(on)max
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS = 25 V
f = 1 MHz
ID = 2 A
V GS = 0
Min.
Typ.
1.5
2.9
700
95
9
Max.
Unit
S
920
126
12
pF
pF
pF
STP4NB80/FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Typ.
Max.
Unit
t d(on)
tr
Turn-on delay Time
Rise Time
Parameter
V DD = 400 V
R G = 4.7 Ω
Test Conditions
ID = 2 A
V GS = 10 V
Min.
14
8
20
12
ns
ns
Qg
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 640 V
I D = 4 A V GS = 10 V
21
7
9
29
nC
nC
nC
Typ.
Max.
Unit
12
9
16
17
13
22
ns
ns
ns
Typ.
Max.
Unit
4
16
A
A
SWITCHING OFF
Symbol
t r(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
Min.
V DD = 640V ID = 4 A
R G = 4.7 Ω V GS = 10 V
SOURCE DRAIN DIODE
Symbol
I SD
I SDM (•)
V SD (∗)
t rr
Q rr
I RRM
Parameter
Test Conditions
Min.
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD =4 A
V GS = 0
1.6
I SD = 4 A di/dt = 100 A/µs
o
V DD = 100 V
T j = 150 C
V
600
ns
3.3
µC
11
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
3/9
STP4NB80/FP
Thermal Impedance for TO-220
Thermal Impedance forTO-220FP
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
4/9
STP4NB80/FP
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/9
STP4NB80/FP
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/9
STP4NB80/FP
TO-220 MECHANICAL DATA
DIM.
mm
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.052
D
2.40
2.72
0.094
0.107
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.202
G1
2.40
2.70
0.094
0.106
H2
10.00
10.40
0.394
L2
L4
16.40
13.00
0.409
0.645
14.00
0.511
0.551
0.116
L5
2.65
2.95
0.104
L6
15.25
15.75
0.600
0.620
L7
6.20
6.60
0.244
0.260
L9
3.50
3.93
0.137
0.154
3.85
0.147
M
DIA.
2.60
3.75
0.102
0.151
P011CI
7/9
STP4NB80/FP
TO-220FP MECHANICAL DATA
mm
DIM.
MIN.
A
4.4
inch
TYP.
MAX.
MIN.
TYP.
MAX.
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
28.6
30.6
1.126
1.204
L4
9.8
10.6
0.385
0.417
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
B
D
A
E
L3
L3
L6
F2
H
G
G1
¯
F
F1
L7
1 2 3
L2
8/9
L4
STP4NB80/FP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2001 STMicroelectronics – Printed in Italy – All Rights Reserved
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