STB9NB50 N-CHANNEL 500V - 0.75 Ω - 8.6A D2PAK STripFET POWER MOSFET ■ ■ ■ ■ ■ ■ ■ ■ ■ TYPE VDSS RDS(on) ID STB9NB50 500 V <0.85 Ω 8.6 A TYPICAL RDS(on) = 0.75 Ω EXTREMELY HIGHT dv/dt CAPABILITY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100 oC VERY LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED LOW LEAKAGE CURRENT APPLICATION ORIENTED FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE DESCRIPTION This Power Mosfet is the latest development of STMicroelectronis unique ”Single Feature Size ” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. 3 1 D2PAK TO-263 (suffix“T4”) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLY (SMPS) ■ DC-AC CONVERTER FOR WELDING EQUIPMENT AND UNINTERRUPTABLE POWER SUPPLY (UPS) ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR VGS ID ID IDM(•) Ptot dv/dt (2) Tstg Tj Parameter Value Unit Drain-source Voltage (VGS = 0) 500 V Drain-gate Voltage (RGS = 20 kΩ) 500 V Gate- source Voltage ± 30 V Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C 8.6 A 5.4 A Drain Current (pulsed) 34.4 A Total Dissipation at TC = 25°C 125 W Derating Factor 1.0 W/°C Peak Diode Recovery voltage slope 4.5 V/ns –60 to 150 °C 150 °C Storage Temperature Max. Operating Junction Temperature ( •)Pulse width limited by safe operating area. November 2000 (2) ISD ≤9A, di/dt ≤200A/µs, VDD ≤ V (BR)DSS, Tj ≤ TJMAX. 1/8 STB9NB50 THERMAL DATA Max 1 °C/W Thermal Resistance Junction-ambient Max 62.5 °C/W Thermal Resistance Case-sink Typ 0.5 °C/W 300 °C Max Value Unit R thj-case Thermal Resistance Junction-case R thj-amb Rthc-sink Tj Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS Symbol Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 8.6 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 520 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (V GS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 30V V(BR)DSS Min. Typ. Max. 500 Unit V 1 50 µA µA ±100 nA ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA R DS(on) Static Drain-source On Resistance VGS = 10 V ID = 4.3 A ID(on) On State Drain Current VDS > ID(on) x RDS(on)max VGS = 10 V Min. Typ. Max. Unit 3 4 5 V 0.75 0.85 Ω 8.6 A DYNAMIC Symbol Parameter Test Conditions Forward Transconductance VDS > ID(on) x R DS(on)max, ID = 4.3 A C iss Input Capacitance VDS = 25V f = 1 MHz VGS = 0 Coss Crss gfs 2/8 (*) Min. Typ. 4.5 5.7 Max. Unit S 1250 1625 pF Output Capacitance 175 236 pF Reverse Transfer Capacitances 20 27 pF STB9NB50 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Typ. Max. Unit Turn-on Delay Time Rise Time VDD = 250V ID = 4.3 A RG = 4.7 Ω VGS = 10 V (see test circuit, Figure 3) 19 11 30 15 ns ns Qg Total Gate Charge 32 45 nC Qgs Gate-Source Charge 10.6 nC Q gd Gate-Drain Charge 13.7 nC td(on) tr Parameter Test Conditions Min. VDD=400V ID=8.6A VGS=10V SWITCHING OFF Symbol Typ. Max. Unit 11.5 11 20 17 16 28 ns ns ns Typ. Max. Unit Source-drain Current 8.6 A ISDM (•) Source-drain Current (pulsed) 34.4 A VSD (*) Forward On Voltage ISD = 8.6 A 1.6 V Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 8.6 A di/dt = 100 A/µs VDD = 100V Tj = 150 °C (see test circuit, Figure 3) tr(Voff) tr tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions Min. VDD = 400 V ID = 8.6 A RG = 4.7 Ω VGS = 10 V (see test circuit, Figure 5) SOURCE DRAIN DIODE Symbol ISD trr Qrr IRRM Parameter Test Conditions Min. VGS = 0 420 3.5 16.5 ns µC A (*) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limit ed by safe operating area. Safe Operating Area Thermal Impedance 3/8 STB9NB50 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STB9NB50 Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 STB9NB50 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STB9NB50 D2PAK MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. A 4.4 4.6 0.173 TYP. 0.181 MAX. A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 D1 E 8 10 10.4 0.393 4.88 5.28 0.192 0.208 E1 G 0.368 0.315 8.5 0.334 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R V2 0.4 0º 0.015 8º 7/8 STB9NB50 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in lif e support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 2000 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A . http://w ww.st.com 8/8