STP45NF3LL - STP45NF3LLFP STB45NF3LL N-CHANNEL 30V - 0.014Ω - 45A TO-220 - TO220FP - D2PAK STripFET II™ POWER MOSFET TYPE STP45NF3LL STP45NF3LLFP STB45NF3LL ■ ■ ■ ■ ■ VDSS RDS(on) ID 30 V 30 V 30 V <0.018Ω <0.018Ω <0.018Ω 45 A 45 A 27 A TYPICAL RDS(on) = 0.014Ω @4.5V OPTIMAL RDS(ON) x Qg TRADE-OFF @ 4.5V CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL DESCRIPTION This application specific Power MOSFET is the third genaration of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows the best trade-off between on-resistance ang gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance. 3 3 1 1 2 D2PAK TO-220 3 1 2 TO-220FP INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY DC/DC CONVERTERS ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value TO-220/D2PAK VDS VDGR VGS Unit TO-220FP Drain-source Voltage (VGS = 0) 30 V Drain-gate Voltage (RGS = 20 kΩ) 30 V Gate- source Voltage ± 16 V ID Drain Current (continuous) at TC = 25°C 45 27 A ID Drain Current (continuous) at TC = 100°C 32 19 A Drain Current (pulsed) 180 108 A IDM () PTOT Total Dissipation at TC = 25°C Derating Factor EAS (1) 25 W 0.167 W/°C Single Pulse Avalanche Energy Viso Insulation Withstand Voltage (DC) Tstg Storage Temperature Tj 70 0.46 Max. Operating Junction Temperature (● ) Pulse width limited by safe operating area November 2002 241 -- mJ 2500 – 55 to 175 (1) Starting Tj= 25°C, ID= 22.5A, VDD= 24V V °C 1/11 STP45NF3LL - STB45NF3LL THERMAL DATA TO-220 D2PAK TO-220FP 2.14 6 Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C Tl °C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 16 V V(BR)DSS Min. Typ. Max. 30 Unit V VDS = Max Rating, TC = 125 °C 1 µA 10 µA ±100 nA Max. Unit ON (1) Symbol Parameter Test Conditions Min. Typ. VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-source On Resistance VGS = 10 V, ID = 22.5 A 0.014 0.018 Ω VGS = 4.5V, ID = 22.5 A 0.016 0.020 Ω Typ. Max. Unit 1 V DYNAMIC Symbol gfs (1) 2/11 Parameter Forward Transconductance Test Conditions VDS =15 V , ID = 22.5 A VDS = 25V, f = 1 MHz, VGS = 0 Min. 20 S 800 pF Ciss Input Capacitance Coss Output Capacitance 250 pF Crss Reverse Transfer Capacitance 60 pF STP45NF3LL - STB45NF3LL ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions Min. VDD = 15 V, ID = 22.5A RG = 4.7Ω VGS = 4.5V (Resistive Load, see Fig. 3) VDD = 24V, ID = 45A, VGS = 5V Typ. Max. Unit 17 ns 100 ns 12.5 4.6 5.2 17 nC nC nC Typ. Max. Unit SWITCHING OFF Symbol td(off) tf Parameter Turn-off-Delay Time Fall Time Test Conditions Min. VDD = 15V, ID = 22.5A, RG = 4.7Ω, VGS = 4.5V (Resistive Load, see Fig. 3) 20 21 ns ns SOURCE DRAIN DIODE Symbol Max. Unit Source-drain Current 45 A ISDM (2) Source-drain Current (pulsed) 180 A VSD (1) Forward On Voltage ISD = 45A, VGS = 0 1.3 V Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 45A, di/dt = 100A/µs, VDD = 15V, Tj = 150°C (see test circuit, Figure 5) ISD trr Qrr IRRM Parameter Test Conditions Min. Typ. 35 44 2.5 ns nC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area for TO-220/D2PAK Thermal Impedance for TO-220/D2PAK 3/11 STP45NF3LL - STB45NF3LL Safe Operating Area for TO-220FP Output Characteristics Transconductance 4/11 Thermal Impedance for TO-220FP Transfer Characteristics Static Drain-source On Resistance STP45NF3LL - STB45NF3LL Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Tj 5/11 STP45NF3LL - STB45NF3LL Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/11 STP45NF3LL - STB45NF3LL TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L4 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 L4 P011C 7/11 STP45NF3LL - STB45NF3LL TO-220FP MECHANICAL DATA mm DIM. MIN. A 4.4 inch TYP. MAX. MIN. 4.6 0.173 TYP. MAX. 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 L2 16 0.630 B D A E L3 L3 L6 F2 H G G1 ¯ F F1 L7 1 2 3 L2 8/11 L4 STP45NF3LL - STB45NF3LL D2PAK MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 E 8 0.315 10 E1 10.4 0.393 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.015 0º 8º 3 V2 0.4 9/11 1 STP45NF3LL - STB45NF3LL D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A DIM. mm inch MIN. MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 * on sales type 10/11 0.075 0.082 0.933 0.956 MAX. MIN. 330 B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA inch MAX. 12.992 0.059 13.2 0.504 0.520 26.4 0.960 1.039 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STP45NF3LL - STB45NF3LL Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com 11/11