ETC STB40NF10T4

STP40NF10
STB40NF10 - STB40NF10-1
N-CHANNEL 100V - 0.024Ω - 50A TO-220/D2PAK/I2PAK
LOW GATE CHARGE STripFET II POWER MOSFET
TYPE
STP40NF10
STB40NF10
STB40NF10-1
■
■
■
■
■
VDSS
RDS(on)
ID
100 V
100 V
100 V
< 0.028 Ω
< 0.028 Ω
< 0.028 Ω
50 A
50 A
50 A
TYPICAL RDS(on) = 0.024Ω
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION
ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL
DESCRIPTION
This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters for Telecom and Computer application. It
is also intended for any application with low gate
charge drive requirements.
3
1
3
1
D2PAK
2
TO-220
3
12
I2PAK
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ HIGH-EFFICIENCY DC-DC CONVERTERS
■ UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VDGR
Parameter
Drain-source Voltage (VGS = 0)
Value
Unit
100
V
Drain-gate Voltage (RGS = 20 kΩ)
100
V
VGS
Gate- source Voltage
± 20
V
ID(*)
Drain Current (continuous) at TC = 25°C
50
A
ID
Drain Current (continuous) at TC = 100°C
35
A
IDM (l )
Drain Current (pulsed)
200
A
PTOT
Total Dissipation at TC = 25°C
150
W
1
W/°C
Derating Factor
dv/dt (1)
Peak Diode Recovery voltage slope
20
V/ns
EAS (2)
Single Pulse Avalanche Energy
150
mJ
– 55 to 175
°C
Tstg
Tj
Storage Temperature
Operating Junction Temperature
( ●) Pulse width limi ted by safe operating area
(*) Limited by Package
September 2002
(1) ISD ≤40A, di/dt ≤600A/µs, VDD ≤ V (BR)DSS, Tj ≤ TJMAX.
(2) Starting Tj = 25°C, ID = 40A, VDD = 50V
1/11
STP40NF10 - STB40NF10 - STB40NF10-1
THERMAL DATA
1
°C/W
Thermal Resistance Junction-ambient Max
62.5
°C/W
Maximum Lead Temperature For Soldering Purpose
300
°C
Rthj-case
Thermal Resistance Junction-case Max
Rthj-amb
Tl
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
V(BR)DSS
IDSS
IGSS
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
Zero Gate Voltage
Drain Current (V GS = 0)
VDS = Max Rating
1
µA
VDS = Max Rating, TC = 125 °C
10
µA
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
±100
nA
100
V
ON (1)
Symbol
Parameter
Test Conditions
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
R DS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 20 A
Min.
Typ.
Max.
Unit
2
2.8
4
V
0.024
0.028
Ω
Typ.
Max.
Unit
DYNAMIC
Symbol
gfs (1)
2/11
Parameter
Test Conditions
Forward Transconductance
VDS = 25V, ID = 20 A
C iss
Input Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
Coss
Output Capacitance
Crss
Reverse Transfer
Capacitance
Min.
20
S
1780
pF
265
pF
112
pF
STP40NF10 - STB40NF10 - STB40NF10-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
td(on)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
28
ns
Rise Time
VDD = 50 V, I D = 20 A
RG = 4.7Ω VGS = 10V
(see test circuit, Figure 3)
63
ns
Qg
Total Gate Charge
VDD = 80V, ID =40A,V GS = 10V
60
Qgs
Gate-Source Charge
10
nC
Q gd
Gate-Drain Charge
23
nC
tr
Turn-on Delay Time
80
nC
SWITCHING OFF
Symbol
td(off)
tf
Parameter
Turn-off-Delay Time
Fall Time
Test Condit ions
Min.
Typ.
Max.
84
28
VDD = 50 V, ID = 20 A,
R G = 4.7Ω, VGS = 10V
(see test circuit, Figure 3)
Unit
ns
ns
SOURCE DRAIN DIODE
Symbol
ISD
Parameter
Test Conditions
Source-drain Current (pulsed)
VSD (1)
Forward On Voltage
ISD = 40 A, V GS = 0
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 40 A, di/dt = 100A/µs,
VDD = 25V, Tj = 150°C
(see test circuit, Figure 5)
IRRM
Typ.
Source-drain Current
ISDM (2)
trr
Qrr
Min.
114
456
8
Max.
Unit
40
A
160
A
1.3
V
ns
nC
A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Safe Operating Area
Thermal Impedance
3/11
STP40NF10 - STB40NF10 - STB40NF10-1
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/11
STP40NF10 - STB40NF10 - STB40NF10-1
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
Normalized Drain-Source Breakdown vs
Temperature
5/11
STP40NF10 - STB40NF10 - STB40NF10-1
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/11
STP40NF10 - STB40NF10 - STB40NF10-1
TO-220 MECHANICAL DATA
DIM.
mm.
MIN.
TYP
inch
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.066
F2
1.14
1.70
0.044
0.066
G
4.95
5.15
0.194
0.202
G1
2.40
2.70
0.094
0.106
H2
10
10.40
0.393
0.409
L2
16.40
0.645
L3
28.90
1.137
L4
13
14
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.20
6.60
0.244
0.259
L9
3.50
3.93
0.137
0.154
DIA
3.75
3.85
0.147
0.151
1
7/11
STP40NF10 - STB40NF10 - STB40NF10-1
D2PAK MECHANICAL DATA
mm.
inch
DIM.
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
0.368
D1
E
8
0.315
10
E1
10.4
0.393
8.5
0.334
G
4.88
5.28
0.192
0.208
L
15
15.85
0.590
0.625
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
M
2.4
3.2
0.094
0.126
R
0.015
0º
8º
3
V2
0.4
8/11
1
STP40NF10 - STB40NF10 - STB40NF10-1
TO-262 (I2PAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
0.368
e
2.4
2.7
0.094
0.106
E
10
10.4
0.393
0.409
L
13.1
13.6
0.515
0.531
L1
3.48
3.78
0.137
0.149
L2
1.27
1.4
0.050
0.055
E
e
B
B2
C2
A1
A
C
A
L1
L2
D
L
P011P5/E
9/11
STP40NF10 - STB40NF10 - STB40NF10-1
D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
DIM.
mm
MIN.
DIM.
mm
inch
A0
MIN.
10.5
MAX. MIN. MAX.
10.7 0.413 0.421
B0
15.7
15.9
0.618 0.626
D
1.5
1.6
0.059 0.063
D1
E
1.59
1.65
1.61
1.85
0.062 0.063
0.065 0.073
F
K0
11.4
4.8
11.6
5.0
0.449 0.456
0.189 0.197
P0
3.9
4.1
0.153 0.161
P1
11.9
12.1
0.468 0.476
P2
R
1.9
50
2.1
0.075 0.082
1.574
T
W
0.25
23.7
0.35 0.0098 0.0137
24.3 0.933 0.956
* on sales type
10/11
MIN.
330
MAX.
A
B
1.5
C
D
12.8
20.2
13.2
0.504 0.520
0795
G
24.4
26.4
0.960 1.039
N
100
T
TAPE MECHANICAL DATA
MAX.
inch
BASE QTY
1000
12.992
0.059
3.937
30.4
1.197
BULK QTY
1000
STP40NF10 - STB40NF10 - STB40NF10-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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11/11