STP62NS04Z N-CHANNEL CLAMPED 12.5mΩ - 62A TO-220 FULLY PROTECTED MESH OVERLAY™ MOSFET VDSS RDS(on) ID CLAMPED <0.015 Ω 62 A TYPE STP62NS04Z ■ ■ ■ ■ TYPICAL RDS(on) = 0.0125 Ω 100% AVALANCHE TESTED LOW CAPACITANCE AND GATE CHARGE 175 oC MAXIMUM JUNCTION TEMPERATURE 3 1 DESCRIPTION 2 TO-220 This fully clamped Mosfet is produced by using the latest advanced Company’s Mesh Overlay process which is based on a novel strip layout. The inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operation conditions such as those encountered in the automotive environment. Any other application requiring extra ruggedness is also recommended. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ ABS, SOLENOID DRIVERS ■ POWER TOOLS Ordering Information SALES TYPE STP62NS04Z MARKING P62NS04Z PACKAGE TO-220 PACKAGING TUBE ABSOLUTE MAXIMUM RATINGS Symbol VDS VDG VGS ID ID IDG IGS IDM(•) Ptot dv/dt (1) EAS (2) VESD Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Gate Current (continuous) Gate SourceCurrent (continuous) Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy ESD (HBM - C = 100pF, R=1.5 kΩ) Storage Temperature Operating Junction Temperature (•) Pulse width limited by safe operating area. March 2004 . Value CLAMPED CLAMPED CLAMPED 62 37.5 ± 50 ± 50 248 110 0.74 8 500 8 Unit V V V A A mA mA A W W/°C V/ns mJ kV -55 to 175 °C (1) ISD ≤40A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX (2) Starting Tj = 25 oC, ID = 20A, VDD= 20V 1/8 STP62NS04Z THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose (for 10 sec., 1.6mm from case) Max Max °C/W °C/W °C 1.36 62.5 300 ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol V(BR)DSS Parameter Test Conditions Min. Typ. Max. Unit Clamped Voltage ID = 1 mA, IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = 16 V 10 µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 10 V 10 µA VGSS Gate-Source Breakdown Voltage IGS = 100 µA VGS = 0 33 V 18 V ON (*) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA RDS(on) Static Drain-source On Resistance VGS = 10 V ID = 30 A Min. Typ. Max. Unit 4 V 12.5 15 mΩ Typ. Max. Unit 2 DYNAMIC Symbol 2/8 Parameter Test Conditions gfs (*) Forward Transconductance VDS = 15 V Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 ID=30A Min. 20 S 1330 420 135 pF pF pF STP62NS04Z ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 20 V ID = 20 A VGS = 10 V RG = 4.7 Ω (Resistive Load, Figure 3) 13 104 Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD= 20 V ID= 40 A VGS= 10V 34 10 11.5 47 nC nC nC Typ. Max. Unit ns ns SWITCHING OFF Symbol Parameter Test Conditions Min. td(off) tf Turn-off Delay Time Fall Time VDD = 20 V ID = 20 A VGS = 10 V RG = 4.7 Ω (Resistive Load, Figure 3) 41 42 ns ns tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time Vclamp = 30 V ID = 40 A VGS = 10 V RG = 4.7Ω, (Inductive Load, Figure 5) 30 54 90 ns ns ns SOURCE DRAIN DIODE Symbol Parameter ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) VSD (*) Forward On Voltage ISD = 62 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 40 A di/dt = 100A/µs Tj = 150°C VDD = 20 V (see test circuit, Figure 5) trr Qrr IRRM Test Conditions Min. Typ. VGS = 0 45 65 2.9 Max. Unit 62 248 A A 1.5 V ns nC A (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/8 STP62NS04Z Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STP62NS04Z Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage Temperature. . . 5/8 STP62NS04Z Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STP62NS04Z TO-220 MECHANICAL DATA DIM. mm. MIN. TYP. inch. MAX. MIN. TYP. TYP. A 4.4 4.6 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 D1 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.40 2.70 0.094 0.106 H2 10 10.40 0.393 0.409 L2 16.10 16.73 0.633 16.40 0.645 0.658 L4 13 14 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.260 L9 3.50 3.93 0.137 0.154 DIA 3.75 3.85 0.147 0.151 7/8 STP62NS04Z Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics All other names are the property of their respective owners. © 2004 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco -Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. www.st.com 8/8