STPS60L45CW ® LOW DROP POWER SCHOTTKY RECTIFIER MAJOR PRODUCTS CHARACTERISTICS A1 K IF(AV) 2 x 30 A Tj (max) 150°C VRRM 45 V VF(max) 0.50 V A2 FEATURES AND BENEFITS ■ ■ ■ ■ ■ ■ A2 VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP LOW THERMAL RESISTANCE AVALANCHE CAPABILITY SPECIFIED K A1 TO-247 DESCRIPTION Dual center tap schottky barrier rectifier suited for 5V output in off line AC/DC power supplies. Packaged in TO-247, this device is intended for use in low voltage, high frequency converters, free wheeling and polarity protection applications. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) Parameter Repetitive peak reverse voltage RMS forward current Value 45 Unit V 50 A 30 60 A 600 A IF(AV) Average forward current Tc = 135°C δ = 0.5 IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal IRRM Repetitive peak reverse current tp = 2 µs square F=1kHz 2 A IRSM Non repetitive peak reverse current tp = 100 µs square 4 A PARM Repetitive peak avalanche power tp = 1µs 12300 W - 65 to + 150 °C 150 °C 10000 V/µs Tstg Tj dV/dt * : Storage temperature range Per diode Per device Tj = 25°C Maximum operating junction temperature (*) Critical rate of rise of reverse voltage dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j − a ) July 2003 - Ed: 3C 1/4 STPS60L45CW THERMAL RESISTANCES Symbol Rth (j-c) Junction to case Parameter Rth (c) Per diode Total Value 0.75 0.42 Unit °C/W Coupling 0.1 °C/W When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * VF * Parameter Tests Conditions Min. Typ. Max. 1.5 175 350 VR = 45 V Reverse leakage current Tj = 25°C Forward voltage drop Tj = 25°C IF = 30 A Tj = 125°C IF = 30 A Tj = 25°C IF = 60 A Tj = 125°C Tj = 125°C Unit mA 0.55 0.44 V 0.5 0.73 0.64 IF = 60 A 0.72 Pulse test : * tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation : P = 0.28 x IF(AV) + 0.0073 IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current (per diode). 22 20 18 16 14 12 10 8 6 4 2 0 PF(av)(W) Fig. 2: Average current versus ambient temperature (δ=0.5, per diode). IF(av)(A) 35 δ = 0.1 δ = 0.2 δ = 0.5 Rth(j-a)=Rth(j-c) δ = 0.05 30 δ=1 25 20 15 T IF(av) (A) 0 5 10 15 20 25 δ=tp/T 30 10 5 tp 35 Rth(j-a)=15°C/W T 40 Fig. 3: Normalized avalanche power derating versus pulse duration. 0 δ=tp/T 0 25 Tamb(°C) 50 75 100 125 150 Fig. 4: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(1µs) 1 tp 1.2 PARM(tp) PARM(25°C) 1 0.1 0.8 0.6 0.4 0.01 0.2 0.001 0.01 2/4 Tj(°C) tp(µs) 0.1 1 0 10 100 1000 0 25 50 75 100 125 150 STPS60L45CW Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values, per diode). Fig. 6: Relative variation of thermal transient impedance junction to case versus pulse duration. Zth(j-c)/Rth(j-c) IM(A) 1.0 400 350 0.8 300 250 0.6 Tc=25°C 200 0.4 150 Tc=75°C 100 t(s) δ=0.5 0 1E-3 T 0.2 Tc=125°C t δ = 0.2 δ = 0.1 IM 50 δ = 0.5 tp(s) Single pulse 1E-2 1E-1 1E+0 Fig. 7: Reverse leakage current versus reverse voltage applied (typical values, per diode). 0.0 1E-4 1E-3 δ=tp/T 1E-2 1E-1 tp 1E+0 Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode). IR(mA) C(nF) 1E+3 10.0 F=1MHz Tj=25°C Tj=150°C 1E+2 Tj=125°C Tj=100°C 1E+1 1.0 1E+0 Tj=25°C 1E-1 VR(V) 1E-2 0 5 10 15 20 25 30 35 40 45 0.1 VR(V) 1 2 5 10 20 50 Fig. 9: Forward voltage drop versus forward current (per diode). IFM(A) 200 100 Typical values Tj=150°C Maximum values Tj=125°C 10 Maximum values Tj=100°C Maximum values Tj=25°C VFM(V) 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 3/4 STPS60L45CW PACKAGE MECHANICAL DATA TO-247 DIMENSIONS REF. V Millimeters Min. Dia. V A H L5 L L2 L4 F2 F1 L1 F3 V2 F4 D L3 F(x3) M G = Type = Marking STPS60L45CW STPS60L45CW ■ ■ ■ ■ E Typ. Max. Inches Min. Typ. Max. A 4.85 5.15 0.191 D 2.20 2.60 0.086 E 0.40 0.80 0.015 F 1.00 1.40 0.039 F1 3.00 F2 2.00 F3 2.00 2.40 0.078 F4 3.00 3.40 0.118 G 10.90 H 15.45 15.75 0.608 L 19.85 20.15 0.781 L1 3.70 4.30 0.145 L2 18.50 L3 14.20 14.80 0.559 L4 34.60 L5 5.50 M 2.00 3.00 0.078 V 5° V2 60° Dia. 3.55 3.65 0.139 0.203 0.102 0.031 0.055 0.118 0.078 0.094 0.133 0.429 0.620 0.793 0.169 0.728 0.582 1.362 0.216 0.118 5° 60° 0.143 Package Weight Base qty Delivery mode TO-247 4.36 g 30 Tube Cooling method : C RECOMMENDED TORQUE VALUE : 0.8M.N MAXIMUM TORQUE VALUE : 1.0M.N EPOXY MEETS UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. 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