STPS16L45CT/CFP ® LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS IF(AV) 2x8A VRRM 45 V Tj (max) 150 °C VF (max) 0.45 V A1 K A2 FEATURES AND BENEFITS LOW FORWARD VOLTAGE DROP MEANING VERY SMALL CONDUCTION LOSSES LOW SWITCHING LOSSES ALLOWING HIGH FREQUENCY OPERATION INSULATED PACKAGE: TO-220FPAB Insulated voltage: 2000V DC Capacitance: 12 pF AVALANCHE CAPABILITY SPECIFIED ■ ■ ■ A2 A2 A1 ■ DESCRIPTION Dual center tap Schottky barrier rectifier designed for high frequency Switched Mode Power Supplies and high frequency DC to DC converters. Packaged in TO-220AB and TO-220FPAB, these devices are intended for use in low voltage, high frequency converters, free-wheeling and polarity protection applications. K A1 K TO-220AB STPS16L45CT TO-220FPAB STPS16L45CFP ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) Parameter Repetitive peak reverse voltage RMS forward current Average forward current TO-220AB Tc = 140°C δ = 0.5 TO-220FPAB Tc = 125°C δ = 0.5 16 Per diode 8 Per device 16 A A 180 A tp=2 µs square F=1kHz 1 A Non repetitive peak reverse current tp = 100 µs square 2 A Repetitive peak avalanche power tp = 1µs 4000 W - 65 to + 150 °C 150 °C 10000 V/µs IRRM Repetitive peak reverse current IRSM PARM * : A Per device tp = 10 ms sinusoidal dV/dt 30 8 Surge non repetitive forward current Tj Unit V Per diode IFSM Tstg Value 45 Storage temperature range Tj = 25°C Maximum operating junction temperature * Critical rate of rise of reverse voltage dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j − a ) July 2003 - Ed : 3C 1/5 STPS16L45CT/CFP THERMAL RESISTANCES Symbol Rth(j-c) Junction to case Parameter Value 2.2 1.3 0.3 4.5 3.5 2.5 Per diode Total Coupling Per diode Total Coupling TO-220AB TO-220FPAB Unit °C/W When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter Tests Conditions IR * Reverse leakage Tj = 25°C VR = VRRM current Tj = 125°C VF * Forward voltage drop Tj = 25°C IF = 8 A Tj = 125°C IF = 8 A Tj = 25°C IF = 16 A Tj = 125°C IF = 16 A Min. Typ. Max. 0.2 Unit mA 65 130 mA 0.5 V 0.39 0.45 0.63 0.55 0.64 Pulse test : * tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation : P = 0.26 x IF(AV) + 0.024 IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current (per diode). Fig. 2: Average current versus temperature (δ = 0.5) (per diode). PF(av)(W) 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 δ = 0.1 δ = 0.05 δ = 0.2 9 8 7 6 5 4 3 2 1 0 δ = 0.5 δ=1 T IF(av) (A) 0 1 2 3 4 5 6 δ=tp/T 7 8 tp 9 10 Fig. 3: Normalized avalanche power derating versus pulse duration. IF(av)(A) Rth(j-a)=Rth(j-c) TO-220AB Rth(j-a)=15°C/W TO-220FPAB T δ=tp/T 0 Tamb(°C) tp 25 50 75 100 125 150 Fig. 4: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(1µs) 1 ambient 1.2 PARM(tp) PARM(25°C) 1 0.1 0.8 0.6 0.4 0.01 0.2 0.001 0.01 2/5 Tj(°C) tp(µs) 0.1 1 0 10 100 1000 0 25 50 75 100 125 150 STPS16L45CT/CFP Fig. 5-1: Non repetitive surge peak forward current versus overload duration (maximum values per diode, TO-220AB). 120 IM(A) 100 80 Tc=25°C 60 Tc=75°C 40 Tc=125°C IM 20 t t(s) δ=0.5 0 1E-3 1E-2 1E-1 1E+0 Fig. 6-1: Relative variation of thermal impedance junction to case versus pulse duration (TO-220AB). Fig. 5-2: Non repetitive surge peak forward current versus overload duration (maximum values per diode, TO-220FPAB). IM(A) 100 90 80 70 60 50 40 30 20 IM 10 0 1E-3 Zth(j-c)/Rth(j-c) 0.8 0.8 δ = 0.5 0.6 0.4 δ = 0.2 T δ = 0.1 0.2 0.2 Single pulse 0.0 1E-4 Tc=100°C t t(s) δ=0.5 1E-2 1E-1 δ=tp/T tp(s) 1E-3 1E-2 δ = 0.5 δ = 0.2 1E-1 T δ = 0.1 tp 1E+0 0.0 1E-3 δ=tp/T tp(s) Single pulse Fig. 7: Reverse leakage current versus reverse voltage applied (typical values) (per diode). 1E-2 1E-1 1E+0 tp 1E+1 Fig. 8: Junction capacitance versus reverse voltage applied (typical values) (per diode). C(pF) IR(mA) 2000 2E+2 1E+2 F=1MHz Tj=25°C Tj=150°C 1000 Tj=125°C 1E+1 500 Tj=75°C 1E+0 1E-1 200 Tj=25°C VR(V) 1E-2 1E+0 Zth(j-c)/Rth(j-c) 1.0 0.4 Tc=50°C Fig. 6-2: Relative variation of thermal impedance junction to case versus pulse duration (TO-220FPAB). 1.0 0.6 Tc=25°C 0 5 10 15 20 25 30 VR(V) 35 40 45 100 1 2 5 10 20 50 3/5 STPS16L45CT/CFP Fig. 9: Forward voltage drop versus forward current (maximum values) (per diode). 100.0 IFM(A) Typical values Tj=150°C 10.0 Tj=125°C Tj=25°C 1.0 Tj=75°C VFM(V) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 PACKAGE MECHANICAL DATA TO-220FPAB REF. A B H Dia L6 L2 L7 L3 L5 D F1 L4 F2 F G1 G 4/5 E A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Dia. DIMENSIONS Millimeters Inches Min. Max. 4.4 4.6 2.5 2.7 2.5 2.75 0.45 0.70 0.75 1 1.15 1.70 1.15 1.70 4.95 5.20 2.4 2.7 10 10.4 16 Typ. 28.6 30.6 9.8 10.6 2.9 3.6 15.9 16.4 9.00 9.30 3.00 3.20 Min. Max. 0.173 0.181 0.098 0.106 0.098 0.108 0.018 0.027 0.030 0.039 0.045 0.067 0.045 0.067 0.195 0.205 0.094 0.106 0.393 0.409 0.63 Typ. 1.126 1.205 0.386 0.417 0.114 0.142 0.626 0.646 0.354 0.366 0.118 0.126 STPS16L45CT/CFP PACKAGE MECHANICAL DATA TO-220AB DIMENSIONS Dia C L5 L7 L6 L2 F2 D L9 L4 F M G1 E G ■ ■ ■ Inches A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam. Min. Max. 4.40 4.60 1.23 1.32 2.40 2.72 0.49 0.70 0.61 0.88 1.14 1.70 1.14 1.70 4.95 5.15 2.40 2.70 10 10.40 16.4 typ. 13 14 2.65 2.95 15.25 15.75 6.20 6.60 3.50 3.93 2.6 typ. 3.75 3.85 Min. Max. 0.173 0.181 0.048 0.051 0.094 0.107 0.019 0.027 0.024 0.034 0.044 0.066 0.044 0.066 0.194 0.202 0.094 0.106 0.393 0.409 0.645 typ. 0.511 0.551 0.104 0.116 0.600 0.620 0.244 0.259 0.137 0.154 0.102 typ. 0.147 0.151 Ordering type Marking Package Weight Base qty Delivery mode STPS16L45CT STPS16L45CT TO-220AB 2g 50 Tube 2g 50 Tube STPS16L45CFP STPS16L45CFP TO-220FPAB ■ Millimeters A H2 F1 REF. Epoxy meets UL94,V0 Cooling method : C Recommended torque value : 0.55 m.N Maximum torque value : 0.70 m.N Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All rights reserved. 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