STPS10L60CF/CFP ® POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS A1 IF(AV) 2x5A VRRM 60 V Tj (max) 150 °C VF (max) 0.52 V K A2 FEATURES AND BENEFITS ■ ■ ■ ■ LOW FORWARD VOLTAGE DROP NEGLIGIBLE SWITCHING LOSSES INSULATED PACKAGE: Insulating voltage = 2000V DC Capacitance = 12pF AVALANCHE CAPABILITY SPECIFIED A2 A2 K K A1 ISOWATT220AB STPS10L60CF TO-220FPAB STPS10L60CFP A1 DESCRIPTION Dual center tap Schottky rectifiers suited for Switched Mode Power Supplies and high frequency DC to DC converters. Packaged in ISOWATT220AB, TO-220FPAB this device is intended for use in high frequency inverters. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) Parameter IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal IRRM Repetitive peak reverse current tp = 2 µs square F = 1kHz PARM Repetitive peak avalanche power tp = 1µs dV/dt * : 30 A 5 10 A 180 A 1 A 4000 W - 65 to + 175 °C 150 °C 10000 V/µs RMS forward current Average forward current Tj Unit V Repetitive peak reverse voltage IF(AV) Tstg Value 60 ISOWATT220AB TO220FPAB Tc =130°C δ = 0.5 Storage temperature range Per diode Per device Tj = 25°C Maximum operating junction temperature * Critical rate of rise reverse voltage dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j − a ) July 2003 - Ed: 3C 1/5 STPS10L60CF/CFP THERMAL RESISTANCE Symbol Rth (j-c) Parameter Per Diode Total Coupling Junction to case ISOWATT220AB TO-220FPAB Rth (c) Value Unit 4.5 3.5 2.5 °C/W °C/W When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter Tests conditions IR * Reverse leakage current Min. Typ. VR = VRRM Tj = 25°C Forward voltage drop Unit 220 µA 60 mA 0.55 V 45 Tj = 125°C VF * Max. Tj = 25°C IF = 5 A Tj = 125°C IF = 5 A Tj = 25°C IF = 10 A Tj = 125°C IF = 10 A 0.43 0.52 0.67 0.55 0.64 Pulse test : * tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation : P = 0.4x IF(AV) + 0.024 IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current (per diode). 3.5 PF(av)(W) 3.0 δ = 0.1 δ = 0.2 Fig. 2: Average current versus temperature (δ=0.5) (per diode). ambient IF(av)(A) δ = 0.5 6 Rth(j-a)=Rth(j-c) δ = 0.05 5 δ=1 2.5 4 2.0 Rth(j-a)=15°C/W 3 1.5 1.0 2 T 1 0.5 IF(av) (A) δ=tp/T δ=tp/T tp 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 2/5 T 0 0 Tamb(°C) tp 25 50 75 100 125 150 STPS10L60CF/CFP Fig. 3: Normalized avalanche power derating versus pulse duration. Fig. 4: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(1µs) 1 1.2 PARM(tp) PARM(25°C) 1 0.1 0.8 0.6 0.4 0.01 0.2 Tj(°C) tp(µs) 0.001 0.01 0.1 1 0 10 100 Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) (ISOWATT220AB, TO-220FPAB). 90 0 1000 25 50 75 100 125 150 Fig. 6: Relative variation of thermal transient impedance junction to case versus pulse duration. (ISOWATT220AB, TO-220FPAB). Zth(j-c)/Rth(j-c) IM(A) 1.0 80 0.8 70 60 50 Tc=25°C 40 0.6 δ = 0.5 0.4 30 δ = 0.2 Tc=75°C 20 IM 10 Tc=125°C t 1E-2 tp(s) Single pulse 1E-1 1E+0 Fig. 7: Reverse leakage current versus reverse voltage applied (typical values, per diode). 0.0 1E-3 1E-2 1E-1 δ=tp/T 1E+0 tp 1E+1 Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode). C(pF) IR(mA) 3E+2 1E+2 T δ = 0.1 t(s) δ=0.5 0 1E-3 0.2 1000 F=1MHz Tj=25°C Tc=150°C Tc=125°C 1E+1 500 Tc=100°C 1E+0 Tc=75°C 1E-1 Tc=50°C Tc=25°C 200 1E-2 VR(V) VR(V) 1E-3 0 5 10 15 20 25 30 35 40 45 50 55 60 100 1 10 100 3/5 STPS10L60CF/CFP Fig. 9: Forward voltage drop versus forward current (maximum values, per diode). IFM(A) 100.0 Tj=150°C (typical values) Tj=25°C 10.0 1.0 Tj=125°C VFM(V) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 PACKAGE MECHANICAL DATA ISOWATT220AB DIMENSIONS ■ ■ ■ Cooling method: C Recommended torque value: 0.55 m.N Maximum torque value: 0.70 m.N 4/5 REF. Millimeters Inches A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 Diam Min. Max. 4.40 4.60 2.50 2.70 2.50 2.75 0.40 0.70 0.75 1.00 1.15 1.70 1.15 1.70 4.95 5.20 2.40 2.70 10.00 10.40 16.00 Typ. 28.60 30.60 9.80 10.60 15.90 16.40 9.00 9.30 3.00 3.20 Min. Max. 0.173 0.181 0.098 0.106 0.098 0.108 0.016 0.028 0.030 0.039 0.045 0.067 0.045 0.067 0.195 0.205 0.094 0.106 0.394 0.409 0.630 Typ. 1.125 1.205 0.386 0.417 0.626 0.646 0.354 0.366 0.118 0.126 STPS10L60CF/CFP PACKAGE MECHANICAL DATA TO-220FPAB REF. A B H Dia L6 L2 L7 L3 L5 D F1 L4 F2 F E G1 G ■ A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Dia. DIMENSIONS Millimeters Inches Min. Max. 4.4 4.6 2.5 2.7 2.5 2.75 0.45 0.70 0.75 1 1.15 1.70 1.15 1.70 4.95 5.20 2.4 2.7 10 10.4 16 Typ. 28.6 30.6 9.8 10.6 2.9 3.6 15.9 16.4 9.00 9.30 3.00 3.20 Min. Max. 0.173 0.181 0.098 0.106 0.098 0.108 0.018 0.027 0.030 0.039 0.045 0.067 0.045 0.067 0.195 0.205 0.094 0.106 0.393 0.409 0.63 Typ. 1.126 1.205 0.386 0.417 0.114 0.142 0.626 0.646 0.354 0.366 0.118 0.126 Ordering type Marking Package Weight Base qty Delivery mode STPS10L60CF STPS10L60CF ISOWATT220AB 2.08g 50 Tube STPS10L60CF STPS10L60CF ISOWATT220AB 2.08g 1000 Bulk STPS10L60CFP STPS10L60CFP TO-220FPAB 2g 50 Tube Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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