STMICROELECTRONICS STPS160H100TV

STPS160H100TV

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
IF(AV)
VRRM
2 x 80 A
100 V
Tj (max)
150 °C
VF (max)
0.68 V
K2
A2
K1
A1
FEATURES AND BENEFITS
NEGLIGIBLESWITCHING LOSSES
HIGH JUNCTION TEMPERATURE CAPABILITY
LOW LEAKAGE CURRENT
GOOD TRADE OFF BETWEEN LEAKAGE
CURRENT AND FORWARD VOLTAGE DROP
AVALANCHERATED
LOW INDUCTION PACKAGE
INSULATED PACKAGE:
Insulating Voltage = 2500 V(RMS)
Capacitance = 45 pF
ISOTOPTM
DESCRIPTION
High voltage dual Schottky rectifier designed
for high frequency telecom and computer
Switched Mode Power Supplies and other
power converters.
Package d in ISOTOP, this device is intended for
use in medium voltage operation, and particularly, in high frequency circuitries where low
switching losses and low noise are required.
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
VRRM
IF(RMS)
Parameter
Repetitive peak reverse voltage
RMS forward current
IF(AV)
Average forward current
Tc = 110°C
δ = 0.5
IFSM
IRRM
Surge non repetitive forward current
Repetitive peak reverse current
tp = 10 ms sinusoidal
tp = 2 µs square F = 1kHz
IRSM
Non repetitive peak reverse current
tp = 100 µs square
Tstg
Storage temperature range
Tj
dV/dt
* :
Per diode
Per device
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
Value
Unit
100
180
V
A
80
160
A
1000
2
A
A
10
- 55 to+ 150
A
°C
150
°C
10000
V/µs
1
dPtot
<
thermal runaway condition for a diode on its own heatsink
Rth(j−a)
dTj
July 1999 - Ed: 2A
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STPS160H100TV
THERMAL RESISTANCES
Symbol
Parameter
Junction to case
Rth (j-c)
Rth (c)
Value
Unit
Per leg
0.9
°C/W
Total
0.5
°C/W
0.14
°C/W
Coupling
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
IR *
Reverse leakage Current
VF**
Tests Conditions
Forward Voltage drop
Min.
Typ.
Max.
Unit
µA
13
40
50
0.59
0.75
0.63
Tj = 25°C
Tj = 125°C
VR = VRRM
Tj = 25°C
Tj = 125°C
IF = 60 A
IF = 60 A
Tj = 25°C
IF = 80 A
Tj = 125°C
Tj = 25°C
IF = 80 A
IF = 120 A
0.63
0.68
0.87
Tj = 125°C
IF = 120 A
0.69
0.74
Tj = 25°C
Tj = 125°C
IF = 160 A
IF = 160 A
0.75
0.92
0.80
mA
V
0.80
* tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
Pulse test :
To evaluate the conduction losses use the following equation :
P = 0.56 x IF(AV) + 0.0015 x IF2(RMS)
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
Fig. 2: Average forward current versus ambient
temperature (δ=0.5, per diode).
PF(av)(W)
IF(av)(A)
80
70
δ = 0.05
δ = 0.1
δ = 0.2
100
δ = 0.5
Rth(j-a)=Rth(j-c)
80
60
50
δ=1
60
40
T
T
20
20
10
0
Rth(j-a)=2°C/W
40
30
IF(av) (A)
0
2/4
20
40
60
δ=tp/T
80
δ=tp/T
tp
100
0
0
25
Tamb(°C)
tp
50
75
100
125
150
STPS160H100TV
Fig. 3: Non repetitive surgepeak forward current versus overloadduration(maximum values, per diode).
Fig. 4: Relative variation of thermal impedance
junction to case versus pulse duration (per diode).
Zth(j-c)/Rth(j-c)
IM(A)
600
1.0
500
0.8
400
0.6
300
δ = 0.5
Tc=50°C
0.4
200
Tc=90°C
IM
100
t
δ = 0.2
T
δ = 0.1
0.2
Single pulse
t(s)
δ =0.5
0
1E-3
δ=tp/T
tp(s)
1E-2
1E-1
1E+0
Fig. 5: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
0.0
1E-3
1E-2
1E-1
tp
1E+0
5E+0
Fig. 6: Junction capacitance versus reverse voltage applied (typical values, per diode) .
IR(mA)
C(nF)
5E+1
10.0
1E+1
F=1MHz
Tj=25°C
Tj=125°C
1E+0
1.0
1E-1
1E-2
1E-3
Tj=25°C
VR(V)
0
10
20
30
40
50
60
70
80
90 100
0.1
VR(V)
1
2
5
10
20
50
100
Fig. 7: Forward voltage drop versus forward current (maximum values, per diode).
IFM(A)
500
Tj=125°C
100
Tj=25°C
10
VFM(V)
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
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STPS160H100TV
PACKAGE MECHANICAL DATA
ISOTOPTM
DIMENSIONS
REF.
Millimeters
Min.
A
A1
B
C
C2
D
D1
E
E1
E2
G
G1
G2
F
F1
P
P1
S
Max.
11.80
12.20
8.90
9.10
7.8
8.20
0.75
0.85
1.95
2.05
37.80
38.20
31.50
31.70
25.15
25.50
23.85
24.15
24.80 typ.
14.90
15.10
12.60
12.80
3.50
4.30
4.10
4.30
4.60
5.00
4.00
4.30
4.00
4.40
30.10
30.30
Inches
Min.
Max.
0.465
0.480
0.350
0.358
0.307
0.323
0.030
0.033
0.077
0.081
1.488
1.504
1.240
1.248
0.990
1.004
0.939
0.951
0.976 typ.
0.587
0.594
0.496
0.504
0.138
0.169
0.161
0.169
0.181
0.197
0.157
0.69
0.157
0.173
1.185
1.193
Cooling method: C
Recommended torque value: 1.3 N.m.
Maximum torque value: 1.5 N.m.
Ordering type
Marking
STPS160H100TV STPS160H100TV
Package
Weight
Base qty
Delivery mode
ISOTOP
27g
without screws
10
Tube
Epoxy meets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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 1999 STMicroelectronics - Printed in Italy - All rights reserved.
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