STMICROELECTRONICS STS01DTP06

STS01DTP06
DUAL NPN-PNP COMPLEMENTARY BIPOLAR TRANSISTOR
PRELIMINARY DATA
Figure 1: Package
Table 1: General Features
n
n
n
n
VCE(sat)
hFE
IC
0.35 V
> 100
1A
HIGH GAIN
LOW VCE(sat)
SIMPLIFIED CIRCUIT DESIGN
REDUCED COMPONENT COUNT
APPLICATION
n
PUSH-PULL OR TOTEM-POLE
CONFIGURATION
n
MOSFET AND IGBT GATE DRIVING
n
MOTOR, RELAY AND SOLENOID DRIVING
SO-8
DESCRIPTION
The STS01DTP06 is a Hybrid dual NPN-PNP
complementary
power
bipolar
transistor
manufactured by using the latest low voltage
planar technology. The STS01DTP06 is housed in
dual island SO-8 package with separated
terminals for higher assembly flexibility,
specifically recommended to be used in Push-Pull
or Totem Pole configuration as post IGBTs and
MOSFETs driver.
Figure 2: Internal Schematic Diagram
Table 2: Order Codes
Part Number
Marking
Package
Packaging
STS01DTP06T4
S01DTP06
SO-8
Tape & Reel
April 2005
Rev. 1
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STS01DTP06
Table 3: Absolute Maximum Ratings
Symbol
Parameter
NPN
PNP
Unit
VCBO
Collector-Base Voltage (IE = 0)
60
-60
V
VCEO
Collector-Emitter Voltage (IB = 0)
30
-30
V
VEBO
Emitter-Base Voltage (IC= 0)
5
-5
V
Collector Current
3
-3
A
Collector Peak Current (tp < 5ms)
6
-6
A
Base Current
1
-1
A
Base Peak Current (tp < 1ms)
2
-2
A
IC
ICM
IB
IBM
Ptot
o
2
W
o
1.6
W
Total Dissipation at TC = 25 C single
Ptot
Total Dissipation at TC = 25 C couple
Tstg
Storage Temperature
TJ
Max. Operating Junction Temperature
-65 to 150
°C
150
°C
For PNP type voltage and current values are negative.
Table 4: Thermal Data
Symbol
Parameter
Unit
Rthj-amb(1) Thermal Resistance Junction-ambient
(Single Operation)
(1) Thermal Resistance Junction-ambient
R
thj-amb
Max
62.5
Max
78
oC/W
o
C/W
(Dual Operation)
(1) When mounted on 1 inch square pad of 2 oz. copper, t ≤10 sec
Table 5: Q1-NPN Transistor Electrical Characteristics (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Collector Cut-off Current
ICBO
Test Conditions
Min.
Typ.
Max.
Unit
VCB = 60 V
0.1
µA
VCE = 30 V
1
µA
VEB = 5 V
1
µA
(IE = 0)
ICEO
Collector Cut-off Current
(IB = 0)
IEBO
Emitter Cut-off Current
(IC = 0)
V(BR)CEO* Collector-Emitter
Breakdown Voltage
IC = 10 mA
30
V
(IB = 0)
*
VCE(sat)
VBE(sat)
hFE*
*
Collector-Emitter
IC = 1 A
IB = 10 mA
Saturation Voltage
IC = 2 A
IB = 100 mA
Base-Emitter
IC = 1 A
IB = 10 mA
Saturation Voltage
DC Current Gain
IC = 1 A
VCE = 2 V
100
IC = 3 A
VCE = 2 V
30
* Pulsed: Pulsed duration = 300 ms, duty cycle ≤ 1.5 %.
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0.35
0.85
1
V
0.7
V
1.1
V
STS01DTP06
Table 6: Q2-PNP Transistor Electrical Characteristics (Tcase = 25 oC unless otherwise specified)
Symbol
ICBO
Parameter
Collector Cut-off Current
Test Conditions
Min.
Typ.
Max.
Unit
VCB = -60 V
-0.1
µA
VCE = -30 V
-1
µA
VEB = -5 V
-1
µA
(IE = 0)
Collector Cut-off Current
ICEO
(IB = 0)
Emitter Cut-off Current
IEBO
(IC = 0)
V(BR)CEO* Collector-Emitter
Breakdown Voltage
IC = -10 mA
-30
V
(IB = 0)
*
VCE(sat)
VBE(sat)
hFE*
*
Collector-Emitter
IC = -1 A
IB = -10 mA
Saturation Voltage
IC = -2 A
IB = -100 mA
Base-Emitter
IC = -1 A
IB = -10 mA
Saturation Voltage
DC Current Gain
IC = -1 A
VCE = -2 V
100
IC = -3 A
VCE = -2 V
30
* Pulsed: Pulsed duration = 300 ms, duty cycle ≤ 1.5 %.
Figure 3: Reverse Biased Area Q1 NPN Transistor
-0.35
-0.85
-1
V
-0.7
V
-1.1
V
Figure 4: DC Current Gain Q1 NPN Transistor
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STS01DTP06
Figure 5: DC Current Gain Q1 NPN Transistor
Figure 8: Collector-Emitter Saturation Voltage
Q1 NPN Transistor
Figure 6: Base-Emitter Saturation Voltage Q1
NPN Transistor
Figure 9: Reverse Biased Area Q2 PNP Transistor
Figure 7: DC Current Gain Q2 PNP Transistor
Figure 10: DC Current Gain Q2 PNP Transistor
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STS01DTP06
Figure 11: Collector-Emitter Saturation Voltage Q2 PNP Transistor
Figure 12: Base-Emitter Saturation Voltage Q2
PNP Transistor
Figure 13: Typical Application
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STS01DTP06
Table 7: Revision History
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Version
Release Date
22-Apr-2005
1
Change Designator
First Release.
STS01DTP06
SO-8 MECHANICAL DATA
DIM.
mm.
MIN.
TYP
A
a1
inch
MAX.
MIN.
TYP.
1.75
0.1
0.068
0.25
a2
MAX.
0.003
0.009
1.65
0.064
a3
0.65
0.85
0.025
0.033
b
0.35
0.48
0.013
0.018
b1
0.19
0.25
0.007
0.010
C
0.25
0.5
0.010
0.019
0.196
c1
45 (typ.)
D
4.8
5.0
0.188
E
5.8
6.2
0.228
1.27
e
e3
3.81
0.150
F
3.8
4.0
0.14
L
0.4
1.27
0.015
M
S
0.244
0.050
0.6
0.157
0.050
0.023
8 (max.)
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STS01DTP06
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by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
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