STMICROELECTRONICS BUL804

BUL804
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
Figure 1: Package
n
NPN TRANSISTOR
n
HIGH VOLTAGE CAPABILITY
n
LOW SPREAD OF DYNAMIC PARAMETERS
n
n
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
APPLICATIONS
n
n
DEDICATED FOR PFC SOLUTION IN
HALF-BRIDGE VOLTAGE FED TOPOLOGY
ELECTRONIC BALLAST FOR
FLUORESCENT LIGHTING
TO-220
1
2
3
Figure 2: Internal Schematic Diagram
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use as PFC in high
frequency ballast half Bridge voltage fed topology.
Table 1: Order Codes
Part Number
Marking
Package
Packaging
BUL804
BUL804
TO-220
Tube
July 2005
Rev. 1
1/7
BUL804
Table 2: Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
VCES
Collector-Emitter Voltage (VBE = 0)
800
V
VCEO
Collector-Emitter Voltage (IB = 0)
450
V
VEBO
Emitter-Base Voltage (IC = 0)
8
V
Collector Current
4
A
Collector Peak Current (tp < 5ms)
8
A
Base Current
2
A
4
A
IC
ICM
IB
IBM
Base Peak Current (tp < 5ms)
o
Ptot
Total Dissipation at TC = 25 C
Tstg
Storage Temperature
TJ
Max. Operating Junction Temperature
70
W
-65 to 150
°C
150
°C
Table 3: Thermal Data
Rthj-case
Thermal Resistance Junction-Case
Max
1.78
oC/W
Rthj-amb
Thermal Resistance Junction-Ambient
Max
62.5
oC/W
Table 4: Electrical Characteristics (Tcase = 25 oC unless otherwise specified)
Symbol
ICES
Parameter
Test Conditions
Collector Cut-off Current VCE = 800 V
(VBE = -1.5 V)
V = 800 V
CE
VEBO
Emitter-Base Voltage
Min.
Typ.
Tj = 125 oC
IE = 10 mA
Max.
Unit
100
µA
500
µA
8
V
450
V
(IC = 0 )
VCEO(sus)* Collector-Emitter
Sustaining Voltage
IC = 100 mA
L = 25 mH
(IB = 0 )
ICEO
Collector Cut-off Current VCE = 450 V
250
µA
IB = 0.2 A
0.8
V
IC = 2.5 A
IB = 0.5 A
1.2
V
Base-Emitter Saturation IC = 1 A
Voltage
IC = 2.5 A
IB = 0.2 A
1.2
V
IB = 0.5 A
1.3
V
(IB = 0)
VCE(sat)*
VBE(sat)*
hFE
Collector-Emitter
Saturation Voltage
DC Current Gain
IC = 1 A
IC = 10 mA
VCE = 5 V
10
IC = 2 A
VCE = 5 V
10
20
1.8
2.6
µs
0.25
µs
RESISTIVE LOAD
VCC = 300 V
IC = 2 A
ts
Storage Time
IB1 = 0.4 A
IB2 = -0.4 A
tf
Fall Time
Tp = 30 µs
INDUCTIVE LOAD
IC = 2 A
IB1 = 0.4 A
ts
Storage Time
VBE(off) = -5 V
RBB = 0 W
0.6
1
µs
tf
Fall Time
(see figure 10)
0.1
0.2
µs
Vclamp = 360 V
* Pulsed: Pulsed duration = 300 µs, duty cycle ≤ 1.5 %.
2/7
(see figure 11)
0.1
BUL804
Figure 3: DC Current Gain
Figure 6: DC Current Gain
Figure 4: Collector-Emitter Saturation Voltage
Figure 7: Base-Emitter Saturation Voltage
Figure 5: Inductive Load Switching Time
Figure 8: Resistive Load Switching Time
3/7
BUL804
Figure 9: Reverse Biased Operating Area
Figure 10: Inductive Load Switching Test Circuit
1) Fast electronic switch
2) Non-inductive Resistor
3) Fast recovery rectifier
Figure 11: Restistive Load Switching Test Circuit
1) Fast electronic switch
2) Non-inductive Resistor
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BUL804
TO-220 MECHANICAL DATA
DIM.
mm.
MIN.
TYP
inch
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
b
0.61
0.88
0.024
0.034
b1
1.15
1.70
0.045
0.066
c
0.49
0.70
0.019
0.027
D
15.25
15.75
0.60
0.620
E
10
10.40
0.393
0.409
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
F
1.23
1.32
0.048
0.052
H1
6.20
6.60
0.244
0.256
J1
2.40
2.72
0.094
0.107
0.551
L
13
14
0.511
L1
3.50
3.93
0.137
L20
16.40
L30
0.154
0.645
28.90
1.137
øP
3.75
3.85
0.147
0.151
Q
2.65
2.95
0.104
0.116
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BUL804
Table 5: Revision History
6/7
Release Date
Version
07-Jul-2005
1
Change Designator
First Release.
BUL804
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