BUL804 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Figure 1: Package n NPN TRANSISTOR n HIGH VOLTAGE CAPABILITY n LOW SPREAD OF DYNAMIC PARAMETERS n n MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED APPLICATIONS n n DEDICATED FOR PFC SOLUTION IN HALF-BRIDGE VOLTAGE FED TOPOLOGY ELECTRONIC BALLAST FOR FLUORESCENT LIGHTING TO-220 1 2 3 Figure 2: Internal Schematic Diagram DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use as PFC in high frequency ballast half Bridge voltage fed topology. Table 1: Order Codes Part Number Marking Package Packaging BUL804 BUL804 TO-220 Tube July 2005 Rev. 1 1/7 BUL804 Table 2: Absolute Maximum Ratings Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VBE = 0) 800 V VCEO Collector-Emitter Voltage (IB = 0) 450 V VEBO Emitter-Base Voltage (IC = 0) 8 V Collector Current 4 A Collector Peak Current (tp < 5ms) 8 A Base Current 2 A 4 A IC ICM IB IBM Base Peak Current (tp < 5ms) o Ptot Total Dissipation at TC = 25 C Tstg Storage Temperature TJ Max. Operating Junction Temperature 70 W -65 to 150 °C 150 °C Table 3: Thermal Data Rthj-case Thermal Resistance Junction-Case Max 1.78 oC/W Rthj-amb Thermal Resistance Junction-Ambient Max 62.5 oC/W Table 4: Electrical Characteristics (Tcase = 25 oC unless otherwise specified) Symbol ICES Parameter Test Conditions Collector Cut-off Current VCE = 800 V (VBE = -1.5 V) V = 800 V CE VEBO Emitter-Base Voltage Min. Typ. Tj = 125 oC IE = 10 mA Max. Unit 100 µA 500 µA 8 V 450 V (IC = 0 ) VCEO(sus)* Collector-Emitter Sustaining Voltage IC = 100 mA L = 25 mH (IB = 0 ) ICEO Collector Cut-off Current VCE = 450 V 250 µA IB = 0.2 A 0.8 V IC = 2.5 A IB = 0.5 A 1.2 V Base-Emitter Saturation IC = 1 A Voltage IC = 2.5 A IB = 0.2 A 1.2 V IB = 0.5 A 1.3 V (IB = 0) VCE(sat)* VBE(sat)* hFE Collector-Emitter Saturation Voltage DC Current Gain IC = 1 A IC = 10 mA VCE = 5 V 10 IC = 2 A VCE = 5 V 10 20 1.8 2.6 µs 0.25 µs RESISTIVE LOAD VCC = 300 V IC = 2 A ts Storage Time IB1 = 0.4 A IB2 = -0.4 A tf Fall Time Tp = 30 µs INDUCTIVE LOAD IC = 2 A IB1 = 0.4 A ts Storage Time VBE(off) = -5 V RBB = 0 W 0.6 1 µs tf Fall Time (see figure 10) 0.1 0.2 µs Vclamp = 360 V * Pulsed: Pulsed duration = 300 µs, duty cycle ≤ 1.5 %. 2/7 (see figure 11) 0.1 BUL804 Figure 3: DC Current Gain Figure 6: DC Current Gain Figure 4: Collector-Emitter Saturation Voltage Figure 7: Base-Emitter Saturation Voltage Figure 5: Inductive Load Switching Time Figure 8: Resistive Load Switching Time 3/7 BUL804 Figure 9: Reverse Biased Operating Area Figure 10: Inductive Load Switching Test Circuit 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier Figure 11: Restistive Load Switching Test Circuit 1) Fast electronic switch 2) Non-inductive Resistor 4/7 BUL804 TO-220 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 0.154 0.645 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 5/7 BUL804 Table 5: Revision History 6/7 Release Date Version 07-Jul-2005 1 Change Designator First Release. BUL804 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 7/7