STMICROELECTRONICS STZT2222A

STZT2222
STZT2222A
MEDIUM POWER AMPLIFIER
ADVANCE DATA
■
■
■
■
SILICON EPITAXIAL PLANAR NPN
TRANSISTORS
MINIATURE PLASTIC PACKAGE FOR
APPLICATION IN SURFACE MOUNTING
CIRCUITS
GENERAL PURPOSE MAINLY INTENDED
FOR USE IN MEDIUM POWER INDUSTRIAL
APPLICATION AND FOR AUDIO AMPLIFIER
OUTPUT STAGE
PNP COMPLEMENTS ARE STZT2907 AND
STZT2907A RESPECTIVELY
2
1
2
3
SOT-223
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STZT2222
STZT2222A
V CBO
Collector-Base Voltage (I E = 0)
60
75
V
V CEO
Collector-Emitter Voltage (I B = 0)
30
40
V
V EBO
Emitter-Base Voltage (I C = 0)
5
6
V
IC
Collector Current
0.8
o
P tot
Total Dissipation at T c = 25 C
T stg
Storage Temperature
Tj
Max. Operating Junction Temperature
October 1995
1.5
A
W
-65 to 150
o
C
150
o
C
1/5
STZT2222/STZT2222A
THERMAL DATA
R thj-amb •
R thj-tab •
Thermal Resistance Junction-Ambient
Thermal Resistance Junction-Collecor Tab
Max
Max
o
83.3
10
o
C/W
C/W
• Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
I CBO
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
10
10
nA
µA
Collector Cut-off
Current (I E = 0)
V CB = rated V CBO
V CB = rated V CBO
I CEX
Collector Cut-off
Current (V BE = -3V)
V CE = 60 V
for STZT2222A
10
nA
IBEX
Base Cut-off Current
(V BE = -3V)
V CE = 60 V
for STZT2222A
20
nA
I EBO
Emitter Cut-off Current
(I E = 0)
V EB = 3 V
for STZT2222
for STZT2222A
30
15
nA
nA
Collector-Base
Breakdown Voltage
(IE = 0)
I C = 10 µA
for STZT2222
for STZT2222A
60
75
V
V
V (BR)CEO ∗ Collector-Emitter
Breakdown Voltage
(I B = 0)
I C = 10 mA
for STZT2222
for STZT2222A
30
40
V
V
5
6
V
V
V (BR)CBO
V (BR)EBO
V CE(sat) ∗
V BE(sat) ∗
h FE ∗
2/5
Emitter-Base
Breakdown Voltage
(I C = 0)
I E = 10 µA
for STZT2222
for STZT2222
Collector-Emitter
Saturation Voltage
I C = 150 mA I B = 15 mA
for STZT2222
for STZT2222A
I C = 500 mA I B = 50 mA
for STZT2222
for STZT2222A
Base-Emitter
Saturation Voltage
DC Current Gain
o
T amb = 125 C
I C = 150 mA I B = 15 mA
for STZT2222
for STZT2222A
I C = 500 mA I B = 50 mA
for STZT2222
for STZT2222A
I C = 0.1 mA V CE = 10 V
I C = 1 mA
V CE = 10 V
I C = 10 mA
V CE = 10 V
I C = 150 mA V CE = 10 V
I C = 150 mA V CE = 1 V
I C = 500 mA V CE = 10 V
for STZT2222
for STZT2222A
I C = 10 mA V CE = 10 V T c = -55 o C
for STZT2222
0.6
35
50
75
100
50
30
40
35
0.4
0.3
V
V
1.6
1
V
V
1.3
1.2
V
V
2.6
2
V
V
300
STZT2222/STZT2222A
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
KΩ
h fe ∗∗
Small Signal Current
Gain
I C = 1 mA
I C = 10 mA
V CE = 10 V
V CE = 10 V
f = 1 KHz
f = 1 KHz
50
75
300
375
hie ∗∗
Input Impedance
I C = 1 mA
I C = 10 mA
V CE = 10 V
V CE = 10 V
f = 1 KHz
f = 1 KHz
2
0.25
8
1.25
h re ∗∗
Reverse Voltage Ratio
I C = 1 mA
I C = 10 mA
V CE = 10 V
V CE = 10 V
f = 1 KHz
f = 1 KHz
h oe ∗∗
Output Impedance
I C = 1 mA
I C = 10 mA
V CE = 10 V
V CE = 10 V
f = 1 KHz
f = 1 KHz
Transition Frequency
I C = 10 mA V CE = 10 V f = 100 MHz
for STZT2222
for STZT2222A
fT
C CBO
Collector-Base
Capacitance
IE = 0
C EBO
Emitter-Base
Capacitance
IC = 0
V EB = 0.5 V
for STZT2222
for STZT2222A
Noise Figure
f = 1 KHz ∆F = 200 Hz R G = 1KΩ
I C = 0.1 mA V CE = 10 V
td
Delay Time
I C1 = 15 mA
tr
Rise Time
I C = 150 mA
V BE = -0.5 V
ts
Storage Time
Fall Time
I C = 150 mA
I B2 = 15 mA
I C1 = 15 mA
tf
NF
V CB = 10 V
f = 1 MHz
5
25
8
4
10 -4
35
375
S
250
300
MHz
MHz
8
pF
30
25
pF
pF
4
dB
10
ns
25
ns
f = 1 MHz
225
ns
60
ns
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 %
∗∗ Only for STZT2222A
3/5
STZT2222/STZT2222A
SOT223 MECHANICAL DATA
mm
DIM.
mils
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
a
2.27
2.3
2.33
89.4
90.6
91.7
b
4.57
4.6
4.63
179.9
181.1
182.3
c
0.2
0.4
0.6
7.9
15.7
23.6
d
0.63
0.65
0.67
24.8
25.6
26.4
e1
1.5
1.6
1.7
59.1
63
66.9
e4
0.32
12.6
f
2.9
3
3.1
114.2
118.1
122.1
g
0.67
0.7
0.73
26.4
27.6
28.7
l1
6.7
7
7.3
263.8
275.6
287.4
l2
3.5
3.5
3.7
137.8
137.8
145.7
L
6.3
6.5
6.7
248
255.9
263.8
L
e1
l2
d
a
c
b
e4
f
l1
C
B
C
E
g
4/5
P008B
STZT2222/STZT2222A
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1995 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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