STZT2222 STZT2222A MEDIUM POWER AMPLIFIER ADVANCE DATA ■ ■ ■ ■ SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER OUTPUT STAGE PNP COMPLEMENTS ARE STZT2907 AND STZT2907A RESPECTIVELY 2 1 2 3 SOT-223 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STZT2222 STZT2222A V CBO Collector-Base Voltage (I E = 0) 60 75 V V CEO Collector-Emitter Voltage (I B = 0) 30 40 V V EBO Emitter-Base Voltage (I C = 0) 5 6 V IC Collector Current 0.8 o P tot Total Dissipation at T c = 25 C T stg Storage Temperature Tj Max. Operating Junction Temperature October 1995 1.5 A W -65 to 150 o C 150 o C 1/5 STZT2222/STZT2222A THERMAL DATA R thj-amb • R thj-tab • Thermal Resistance Junction-Ambient Thermal Resistance Junction-Collecor Tab Max Max o 83.3 10 o C/W C/W • Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO Parameter Test Conditions Min. Typ. Max. Unit 10 10 nA µA Collector Cut-off Current (I E = 0) V CB = rated V CBO V CB = rated V CBO I CEX Collector Cut-off Current (V BE = -3V) V CE = 60 V for STZT2222A 10 nA IBEX Base Cut-off Current (V BE = -3V) V CE = 60 V for STZT2222A 20 nA I EBO Emitter Cut-off Current (I E = 0) V EB = 3 V for STZT2222 for STZT2222A 30 15 nA nA Collector-Base Breakdown Voltage (IE = 0) I C = 10 µA for STZT2222 for STZT2222A 60 75 V V V (BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) I C = 10 mA for STZT2222 for STZT2222A 30 40 V V 5 6 V V V (BR)CBO V (BR)EBO V CE(sat) ∗ V BE(sat) ∗ h FE ∗ 2/5 Emitter-Base Breakdown Voltage (I C = 0) I E = 10 µA for STZT2222 for STZT2222 Collector-Emitter Saturation Voltage I C = 150 mA I B = 15 mA for STZT2222 for STZT2222A I C = 500 mA I B = 50 mA for STZT2222 for STZT2222A Base-Emitter Saturation Voltage DC Current Gain o T amb = 125 C I C = 150 mA I B = 15 mA for STZT2222 for STZT2222A I C = 500 mA I B = 50 mA for STZT2222 for STZT2222A I C = 0.1 mA V CE = 10 V I C = 1 mA V CE = 10 V I C = 10 mA V CE = 10 V I C = 150 mA V CE = 10 V I C = 150 mA V CE = 1 V I C = 500 mA V CE = 10 V for STZT2222 for STZT2222A I C = 10 mA V CE = 10 V T c = -55 o C for STZT2222 0.6 35 50 75 100 50 30 40 35 0.4 0.3 V V 1.6 1 V V 1.3 1.2 V V 2.6 2 V V 300 STZT2222/STZT2222A ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit KΩ h fe ∗∗ Small Signal Current Gain I C = 1 mA I C = 10 mA V CE = 10 V V CE = 10 V f = 1 KHz f = 1 KHz 50 75 300 375 hie ∗∗ Input Impedance I C = 1 mA I C = 10 mA V CE = 10 V V CE = 10 V f = 1 KHz f = 1 KHz 2 0.25 8 1.25 h re ∗∗ Reverse Voltage Ratio I C = 1 mA I C = 10 mA V CE = 10 V V CE = 10 V f = 1 KHz f = 1 KHz h oe ∗∗ Output Impedance I C = 1 mA I C = 10 mA V CE = 10 V V CE = 10 V f = 1 KHz f = 1 KHz Transition Frequency I C = 10 mA V CE = 10 V f = 100 MHz for STZT2222 for STZT2222A fT C CBO Collector-Base Capacitance IE = 0 C EBO Emitter-Base Capacitance IC = 0 V EB = 0.5 V for STZT2222 for STZT2222A Noise Figure f = 1 KHz ∆F = 200 Hz R G = 1KΩ I C = 0.1 mA V CE = 10 V td Delay Time I C1 = 15 mA tr Rise Time I C = 150 mA V BE = -0.5 V ts Storage Time Fall Time I C = 150 mA I B2 = 15 mA I C1 = 15 mA tf NF V CB = 10 V f = 1 MHz 5 25 8 4 10 -4 35 375 S 250 300 MHz MHz 8 pF 30 25 pF pF 4 dB 10 ns 25 ns f = 1 MHz 225 ns 60 ns ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 % ∗∗ Only for STZT2222A 3/5 STZT2222/STZT2222A SOT223 MECHANICAL DATA mm DIM. mils MIN. TYP. MAX. MIN. TYP. MAX. a 2.27 2.3 2.33 89.4 90.6 91.7 b 4.57 4.6 4.63 179.9 181.1 182.3 c 0.2 0.4 0.6 7.9 15.7 23.6 d 0.63 0.65 0.67 24.8 25.6 26.4 e1 1.5 1.6 1.7 59.1 63 66.9 e4 0.32 12.6 f 2.9 3 3.1 114.2 118.1 122.1 g 0.67 0.7 0.73 26.4 27.6 28.7 l1 6.7 7 7.3 263.8 275.6 287.4 l2 3.5 3.5 3.7 137.8 137.8 145.7 L 6.3 6.5 6.7 248 255.9 263.8 L e1 l2 d a c b e4 f l1 C B C E g 4/5 P008B STZT2222/STZT2222A Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . 5/5