HD1750FX HIGH VOLTAGE NPN POWER TRANSISTOR FOR HIGH DEFINITION AND NEW SUPER-SLIM CRT DISPLAYS ■ STATE-OF-THE-ART TECHNOLOGY: DIFFUSED COLLECTOR "ENHANCED GENERATION" EHVS1 ■ WIDER RANGE OF OPTIMUM DRIVE CONDITIONS ■ LESS SENSITIVE TO OPERATING TEMPERATURE VARIATION ■ FULLY INSULATED POWER PACKAGE U.L. COMPLIANT Figure 1: Package APPLICATIONS ■ ISOWATT218FX HORIZONTAL DEFLECTION OUTPUT FOR DIGITAL TV, HDTV AND HIGH-END MONITORS Figure 2: Internal Schematic Diagram DESCRIPTION The device is manufactured using Diffused Collector in Planar technology adopting "Enhance High Voltage Structure" (EHVS1) developed to fit High-Definition CRT displays. The new HD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage. Table 1: Order Codes Part Number Marking Package Packaging HD1750FX HD1750FX ISOWATT218FX TUBE December 2005 Rev. 2 1/8 HD1750FX Table 2: Absolute Maximum Ratings Symbol Parameter Value Unit V VCES Collector-Emitter Voltage (VBE = 0) 1700 VCEO Collector-Emitter Voltage (IB= 0) Emitter-Base Voltage (IC= 0) 800 V 10 V VEBO IC ICM IB IBM Ptot Vins Tstg TJ Collector Current 24 A Collector Peak Current (tp < 5ms) 36 A Base Current 12 A Base Peak Current (tp < 5ms) 18 A 75 W 2500 V o Total Dissipation at TC = 25 C Insulation Withstand Voltage (RMS) from All Three Leads to External Heatsink Storage Temperature -65 to 150 °C 150 °C 1.67 oC/W Max. Operating Junction Temperature Table 3: Thermal Data Rthj-case Thermal Resistance Junction-Case Max Table 4: Electrical Characteristics (Tcase = 25 oC unless otherwise specified) Symbol ICES IEBO Parameter Test Conditions Min. Typ. Collector Cut-off Current VCE = 1700 V (VBE = 0) VCE = 1700 V Emitter Cut-off Current VEB = 5 V TC = 125 oC Max. Unit 0.2 mA 2 mA 10 µA (IC = 0) VCEO(sus)* Collector-Emitter Sustaining Voltage IC = 10 mA 800 V IE = 10 mA 10 V (IB = 0 ) VEBO Emitter-Base Voltage (IC = 0 ) VCE(sat)* VBE(sat)* hFE Collector-Emitter IC = 12 A Saturation Voltage Base-Emitter Saturation IC = 12 A Voltage DC Current Gain IC = 1 A IB = 3 A IB = 3 A 0.95 VCE = 5 V V 1.5 V 30 VCE = 5 V IC = 12 A 3 6.5 9.5 INDUCTIVE LOAD IC = 12 A fh = 31250 Hz ts Storage Time IB(on) = 1.9 A IB(off) = -8.1 A 3.1 3.8 µs tf Fall Time VCE(fly) = 1320 V VBE(off) = -2.7 V 350 500 ns INDUCTIVE LOAD IC = 6.5 A fh = 100 kHz ts Storage Time IB(on) = 1.2 A IB(off) = -5.85 A 1.7 2 µs tf Fall Time VBE(off) = -2.7 V 180 250 ns LBB(off) = 0.8 µH VCE(fly) = 1220 V LBB(off) = 0.25 µH * Pulsed: Pulsed duration = 300 ms, duty cycle ≤ 1.5 %. 2/8 HD1750FX Figure 3: Safe Operating Area Figure 6: Derating Curve Figure 4: Output Chatacterisctics Figure 7: Reverse Biased SOA Figure 5: DC Current Gain Figure 8: DC Current Gain 3/8 HD1750FX Figure 9: Collector-Emitter Saturation Voltage Figure 12: Base-Emitter Saturation Voltage Figure 10: Power Losses Figure 13: Power Losses Figure 11: Inductive Load Switching Time Figure 14: Inductive Load Switching Time 4/8 HD1750FX Figure 15: Power Losses and Inductive Load Switching Test Circuit Figure 16: Reverse Biased Safe Operating Area Test Circuit 5/8 HD1750FX ISOWATT218FX MECHANICAL DATA DIM. A C D D1 E F F2 G G1 H L L2 L3 L4 L5 L6 L7 N R Dia MIN. 5.30 2.80 3.10 1.80 0.80 0.65 1.80 10.30 mm. TYP MAX. 5.70 3.20 3.50 2.20 1.10 0.95 2.20 11.50 5.45 15.30 9 22.80 26.30 43.20 4.30 24.30 14.60 1.80 3.80 3.40 15.70 10.20 23.20 26.70 44.40 4.70 24.70 15 2.20 4.20 3.80 7627132 B 6/8 HD1750FX Figure 5: Revision History Release Date Version 30-May-2005 1 19-Dec-2005 2 Change Designator Initial Release. New hFE value in table 4 7/8 HD1750FX Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 8/8