PN2222A ® SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Ordering Code Marking PN2222A PN2222A TO-92 / Bulk PN2222A-AP PN2222A TO-92 ■ ■ ■ Package / Shipment / Ammopack SILICON EPITAXIAL PLANAR NPN TRANSISTOR TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY THE PNP COMPLEMENTARY TYPE IS PN2907A APPLICATIONS ■ WELL SUITABLE FOR TV AND HOME APPLIANCE EQUIPMENT ■ SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION VOLTAGE TO-92 Bulk TO-92 Ammopack INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Value Unit V CBO Collector-Emitter Voltage (I E = 0) 75 V V CEO Collector-Emitter Voltage (I B = 0) 40 V V EBO Emitter-Base Voltage (I C = 0) IC Parameter Collector Current 6 V 0.6 A I CM Collector Peak Current (t p < 5 ms) 0.8 A P tot Total Dissipation at T amb = 25 o C 500 mW T stg Storage Temperature Tj Max. Operating Junction Temperature February 2003 -65 to 150 o C 150 o C 1/6 PN2222A THERMAL DATA R thj-amb • R thj-case • Thermal Resistance Junction-Ambient Thermal Resistance Junction-Case Max Max o 250 83.3 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Max. Unit I CEX Collector Cut-off Current (V BE = -3 V) Parameter V CE = 60 V Test Conditions Min. Typ. 10 nA I BEX Base Cut-off Current (V BE = -3 V) V CE = 60 V 20 nA I CBO Collector Cut-off Current (I E = 0) V CB = 75 V V CB = 75 V 10 10 nA µA I EBO Emitter Cut-off Current (I C = 0) V EB = 3 V 15 nA T j = 150 o C V (BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) I C = 10 mA 40 V V (BR)CBO Collector-Base Breakdown Voltage (I E = 0) I C = 10 µA 75 V V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) I E = 10 µA 6 V V CE(sat) ∗ Collector-Emitter Saturation Voltage I C = 150 mA I C = 500 mA I B = 15 mA I B = 50 mA V BE(sat) ∗ Collector-Base Saturation Voltage I C = 150 mA I C = 500 mA I B = 15 mA I B = 50 mA 0.6 DC Current Gain IC IC IC IC IC IC V CE = 10 V V CE = 10 V V CE = 10 V V CE = 10 V V CE = 1 V V CE = 10 V 35 50 75 100 50 40 h FE ∗ fT 0.1 mA 1 mA 10 mA 150 mA 150 mA 500 mA V V 1.2 2 V V 300 Transition Frequency I C = 20 mA V CE = 20V f = 100MHz C CBO Collector-Base Capacitance IE = 0 C EBO Emitter-Base Capacitance IC = 0 NF Noise Figure I C = 0.1 mA V CE = 10 V ∆f = 200 Hz R G = 1 KΩ hie ∗ Input Impedance V CE = 10 V V CE = 10 V I C = 1 mA I C = 10 mA f = 1 KHz f = 1 KHz h re ∗ Reverse Voltage Ratio V CE = 10 V V CE = 10 V I C = 1 mA I C = 10 mA f = 1 KHz f = 1 KHz hfe ∗ Small Signal Current Gain V CE = 10 V V CE = 10 V I C = 1 mA I C = 10 mA f = 1 KHz f = 1 KHz 50 75 300 375 h oe ∗ Output Admittance V CE = 10 V V CE = 10 V I C = 1 mA I C = 10 mA f = 1 KHz f = 1 KHz 5 25 35 200 ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % 2/6 = = = = = = 0.3 1 V CB = 10 V VEB = 0.5 V 270 f = 1 MHz f = 1MHz MHz 4 8 pF 20 25 pF 4 f = 1 KHz 2 0.25 dB 8 1.25 KΩ KΩ 8 4 10 10 -4 -4 µS µS PN2222A ELECTRICAL CHARACTERISTICS (Continued) Symbol Parameter td Delay Time tr Rise Time ts Storage Time tf Fall Time Test Conditions I C = 150 mA V CC = 30 V I C = 150 mA V CC = 30 V I B = 15 mA I B1 = - I B2 = 15 mA Min. Typ. Max. Unit 5 10 ns 12 25 ns 185 225 ns 24 60 ns ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % 3/6 PN2222A TO-92 MECHANICAL DATA mm DIM. MIN. 4/6 TYP. inch MAX. MIN. TYP. MAX. A 4.32 4.95 0.170 0.195 b 0.36 0.51 0.014 0.020 D 4.45 4.95 0.175 0.194 E 3.30 3.94 0.130 0.155 e 2.41 2.67 0.095 0.105 e1 1.14 1.40 0.045 0.055 L 12.70 15.49 0.500 0.609 R 2.16 2.41 0.085 0.094 S1 1.14 1.52 0.045 0.059 W 0.41 0.56 0.016 0.022 V 4 degree 6 degree 4 degree 6 degree PN2222A TO-92 AMMOPACK SHIPMENT (Suffix"-AP") MECHANICAL DATA DIM. A1 T T1 T2 d P0 P2 F1,F2 delta H W W0 W1 W2 H H0 H1 D0 t L I1 delta P MIN. mm TYP. 12.50 5.65 2.44 -2.00 17.50 5.70 8.50 18.00 6.00 9.00 18.50 15.50 16.00 3.80 4.00 3.00 -1.00 12.70 6.35 2.54 MAX. 4.80 3.80 1.60 2.30 0.48 12.90 7.05 2.94 2.00 19.00 6.30 9.25 0.50 20.50 16.50 25.00 4.20 0.90 11.00 1.00 MIN. inch TYP. 0.492 0.222 0.096 -0.079 0.689 0.224 0.335 0.709 0.236 0.354 0.728 0.610 0.630 0.150 0.157 0.118 -0.039 0.500 0.250 0.100 MAX. 0.189 0.150 0.063 0.091 0.019 0.508 0.278 0.116 0.079 0.748 0.248 0.364 0.020 0.807 0.650 0.984 0.165 0.035 0.433 0.039 5/6 PN2222A Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2003 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 6/6