STS4DPFS2LS P-CHANNEL 20V - 0.06Ω - 4A SO-8 STripFET™ MOSFET PLUS SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS MOSFET SCHOTTKY VDSS RDS(on) ID 20 V < 0.07 Ω 4A IF(AV) VRRM VF(MAX) 3A 40 V 0.44 V DESCRIPTION This product associates the latest low voltage STripFET™ in p-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DC-DC converters for printers, portable equipment, and cellular phones. SO-8 INTERNAL SCHEMATIC DIAGRAM MOSFET ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS Value Unit Drain-source Voltage (VGS = 0) Parameter 20 V Drain-gate Voltage (RGS = 20 kΩ) 20 V ± 20 V Gate- source Voltage ID Drain Current (continuos) at TC = 25°C 4 A ID Drain Current (continuos) at TC = 100°C 3.4 A Drain Current (pulsed) 16 A Total Dissipation at TC = 25°C 2 W Single Pulse Avalanche Energy 20 mJ Value Unit IDM (●) PTOT EAS (1) SCHOTTKY ABSOLUTE MAXIMUM RATINGS Symbol VRRM IF(RMS) Parameter Repetitive Peak Reverse Voltage 40 V RMS Forward Current 10 A IF(AV) Average Forward Current TL = 120°C δ = 0.5 3 A IFSM Surge Non Repetitive Forward Current tp = 10 ms Sinusoidal 75 A IRRM Repetitive Peak Reverse Current tp = 2 µs F = 1 kHz 1 A dv/dt Critical Rate Of Rise Of Reverse Voltage 10000 V/µs (•)Pulse width limited by safe operating area (1) Starting Tj = 25°C, I D = 2.5 A, VDD = 20 V February 2001 Note: For the P-CHANNEL MOSFET actual polarity of Voltages and current has to be reversed 1/8 STS4DPFS2LS THERMAL DATA Rthj-amb (*)Thermal Resistance Junction-ambient MOSFET 62.5 °C/W Rthj-amb (*)Thermal Resistance Junction-ambient SCHOTTKY 100 °C/W Tstg Tl Storage Temperature Range -55 to 150 °C 150 °C Junction Temperature (*) Mounted on FR-4 board (Steady State) MOSFET ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Test Conditions Min. Typ. Max. 20 Unit Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 V Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating 1 µA VDS = Max Rating, TC = 125 °C 10 µA Gate-body Leakage Current (VDS = 0) VGS = ± 20 V ±100 nA ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 2.5 A ID(on) On State Drain Current Min. Typ. Max. Unit 1 1.6 2.5 V 0.06 0.07 Ω 0.07 0.085 VGS = 4.5V, ID = 2.5 A VDS > ID(on) x RDS(on)max, VGS = 10V 16 A DYNAMIC Symbol gfs (1) 2/8 Parameter Forward Transconductance Test Conditions VDS > ID(on) x RDS(on)max, ID = 2 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. Max. Unit 5 S 1350 pF Ciss Input Capacitance Coss Output Capacitance 490 pF Crss Reverse Transfer Capacitance 130 pF STS4DPFS2LS ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Parameter Turn-on Delay Time Rise Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Test Conditions Min. VDD = 15V, ID = 3A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) VDD = 24V, ID = 6A, VGS = 4.5 V Typ. Max. Unit 25 ns 35 ns 12.5 16 nC 5 nC 3 nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time VDD = 15 V, ID = 2A, RG = 4.7Ω, VGS = 4.5 V (see test circuit, Figure 3) 125 30 ns ns tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time Vclamp = 24 V, ID = 6 A, RG = 4.7Ω, VGS = 4.5 V (see test circuit, Figure 5) 83 40 75 ns ns ns SOURCE DRAIN DIODE Symbol Max. Unit Source-drain Current 4 A ISDM (2) Source-drain Current (pulsed) 16 A VSD (1) Forward On Voltage ISD = 4 A, VGS = 0 1.2 V ISD = 4 A, di/dt = 100A/µs, VDD = 15 V, Tj = 150°C (see test circuit, Figure 5) ISD Parameter trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current Test Conditions Min. Typ. 45 ns 36 nC 1.6 A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. SCHOTTCKY STATIC ELETTRICAL CHARACTERISTICS Symbol Parameter Test Conditions IR(*) Reversed Leakage Current TJ = 25 °C , VR = 30 V TJ = 125 °C , VR = 30 V VF(*) Forward Voltage Drop TJ = TJ = TJ = TJ = TJ = TJ = 25 °C , IF = 1 A 125 °C , IF = 1 A 25 °C , IF = 2 A 125 °C , IF = 2 A 25 °C , IF = 3 A 125 °C , IF = 3 A Min. Typ. Max. Unit 14 8 50 18 µA mA 0.37 0.28 0.41 0.34 0.42 0.32 0.46 0.39 0.5 0.44 V V V V V V 0.4 3/8 STS4DPFS2LS Safe Operating Area Thermal Impedance Output Characteristics Transfer Characteristics Transconductance 4/8 Static Drain-source On Resistance STS4DPFS2LS Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 STS4DPFS2LS Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STS4DPFS2LS SO-8 MECHANICAL DATA mm DIM. MIN. TYP. A a1 MAX. MIN. TYP. 1.75 0.1 0.003 0.009 1.65 0.65 MAX. 0.068 0.25 a2 a3 inch 0.064 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 D 4.8 5.0 0.188 0.196 E 5.8 6.2 0.228 0.244 c1 45 (typ.) e 1.27 0.050 e3 3.81 0.150 F 3.8 4.0 0.14 0.157 L 0.4 1.27 0.015 0.050 M S 0.6 0.023 8 (max.) 0016023 7/8 STS4DPFS2LS Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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