STS5NS150 N-CHANNEL 150V - 0.075 Ω - 5A SO-8 LOW GATE CHARGE STripFET™ II POWER MOSFET ■ ■ ■ ■ TYPE VDSS RDS(on) ID STS5NS150 150 V <0.1 Ω 5A TYPICAL RDS(on) = 0.075 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements. SO-8 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH-EFFICIENCY DC-DC CONVERTERS ■ UPS AND MOTOR CONTROL ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS Parameter Drain-source Voltage (VGS = 0) Value Unit 150 V Drain-gate Voltage (RGS = 20 kΩ) 150 V Gate- source Voltage ± 20 V ID Drain Current (continuous) at TC = 25°C 5 A ID Drain Current (continuous) at TC = 100°C 3 A Drain Current (pulsed) 20 A IDM(•) Ptot Tstg Tj Total Dissipation at TC = 25°C 2.5 W Derating Factor 0.02 W/°C -55 to 150 °C Storage Temperature Operating Junction Temperature (•) Pulse width limited by safe operating area. May 2002 . 1/8 STS5NS150 THERMAL DATA Rthj-amb (*)Thermal Max Resistance Junction-ambient 50 °C/W Max Value Unit 5 A 500 mJ (*) When mounted on FR-4 board with 0.5 in2 pad of Cu. AVALANCHE CHARACTERISTICS Symbol Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating TC = 125°C IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20 V V(BR)DSS Min. Typ. Max. 150 Unit V 1 10 µA µA ±100 nA ON (*) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS RDS(on) Static Drain-source On Resistance VGS = 10 V ID = 250 µA Min. Typ. Max. Unit 2 3 4 V 0.075 0.1 Ω Typ. Max. Unit ID = 2.5 A DYNAMIC Symbol 2/8 Parameter Test Conditions gfs (*) Forward Transconductance VDS > ID(on) x RDS(on)max, VGS = 4 V Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 Min. 5 S 990 175 110 pF pF pF STS5NS150 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time ID = 2.5 A VDD = 75 V RG = 4.7 Ω VGS = 10 V (Resistive Load, Figure 1) 12 2.8 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD= 120V ID= 5A VGS= 10V 65 5.5 2.7 nC nC nC (see test circuit, Figure 2) SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time ID = 2.5 A VDD = 75 V RG = 4.7Ω, VGS = 10 V (Resistive Load, Figure 1) 50 12 ns ns tr(Voff) tf tc Turn-off Delay Time Fall Time Cross-over Time ID = 5 A Vclamp = 120 V RG = 4.7Ω, VGS = 10 V (Inductive Load, Figure 5) 11 17 36 ns ns ns SOURCE DRAIN DIODE Symbol Parameter ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) VSD (*) Forward On Voltage ISD = 5 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt = 100A/µs ISD = 5 A VDD = 30 V Tj = 150°C (see test circuit, Figure 3) trr Qrr IRRM Test Conditions Min. Typ. VGS = 0 150 712 9.5 Max. Unit 5 20 A A 1.3 V ns nC A (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/8 STS5NS150 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STS5NS150 Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage Temperature . . 5/8 STS5NS150 Fig. 1: Switching Times Test Circuits For Resistive Load Fig. 3: Test Circuit For Diode Recovery Behaviour 6/8 Fig. 2: Gate Charge test Circuit STS5NS150 SO-8 MECHANICAL DATA mm DIM. MIN. TYP. A a1 MAX. MIN. TYP. 1.75 0.1 0.003 0.009 1.65 0.65 MAX. 0.068 0.25 a2 a3 inch 0.064 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 c1 45 (typ.) D 4.8 5.0 0.188 0.196 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 3.81 0.150 F 3.8 4.0 0.14 0.157 L 0.4 1.27 0.015 0.050 M S 0.6 0.023 8 (max.) 0016023 7/8 STS5NS150 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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