STMICROELECTRONICS STD4NC50-1

STD4NC50
STD4NC50-1
N-CHANNEL 500V - 1.3Ω - 3.7A DPAK/IPAK
PowerMesh™II MOSFET
TYPE
STD4NC50
STD4NC50-1
■
■
■
■
■
VDSS
RDS(on)
ID
500V
500V
<1.5Ω
<1.5Ω
3.7A
3.7A
TYPICAL RDS(on) = 1.3Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area
figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate
charge and ruggedness.
3
3
2
1
1
IPAK
(SUFFIX“-1”)
DPAK
(NO SUFFIX)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
SWITH MODE LOW POWER SUPPLIES
(SMPS)
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVES
■
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VDGR
Parameter
Drain-source Voltage (VGS = 0)
Value
Unit
500
V
Drain-gate Voltage (RGS = 20 kΩ)
500
V
Gate- source Voltage
±30
V
ID
Drain Current (continuos) at TC = 25°C
3.7
A
ID
Drain Current (continuos) at TC = 100°C
2.3
A
IDM (*)
Drain Current (pulsed)
14.8
A
PTOT
Total Dissipation at TC = 25°C
50
W
Derating Factor
0.4
W/°C
VGS
dv/dt(1)
Tstg
Tj
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
August 2001
3
V/ns
–65 to 150
°C
150
°C
(1)ISD ≤3.7A, di/dt ≤100A/µs, VDD ≤ V (BR)DSS, Tj ≤ T JMAX.
1/9
STD4NC50/-1
THERMAL DATA
Rthj-case
Thermal Resistance Junction-case Max
2.5
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
100
°C/W
Maximum Lead Temperature For Soldering Purpose
275
°C
Tl
AVALANCHE CHARACTERISTICS
Symbol
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Parameter
3.7
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
220
mJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±30V
V(BR)DSS
Min.
Typ.
Max.
500
Unit
V
VDS = Max Rating, TC = 125 °C
1
µA
50
µA
±100
nA
ON (1)
Symbol
Parameter
Test Conditions
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 1.9 A
Min.
Typ.
Max.
Unit
2
3
4
V
1.3
1.5
Ω
Typ.
Max.
Unit
DYNAMIC
Symbol
gfs
2/9
(1)
Parameter
Forward Transconductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID = 1.9A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
3
S
700
pF
85
pF
9
pF
STD4NC50/-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
td(on)
tr
Qg
Qgs
Qgd
Parameter
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
Min.
VDD = 250V, ID = 1.9 A
RG = 4.7Ω VGS = 10V
(see test circuit, Figure 3)
VDD = 400V, ID = 3.7 A,
VGS = 10V
Typ.
Max.
Unit
11.5
ns
9
ns
18
6
8
25
nC
nC
nC
Typ.
Max.
Unit
SWITCHING OFF
Symbol
tr(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
Min.
VDD = 400V, ID = 3.7 A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 5)
7
6
13
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
ISD
ISDM (2)
VSD (1)
trr
Qrr
IRRM
Parameter
Test Conditions
Min.
Typ.
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
ISD = 3.7A, VGS = 0
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 3.7A, di/dt = 100A/µs,
VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)
380
2.3
12
Max.
Unit
3.7
A
14.8
A
1.6
V
ns
µC
A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Safe Operating Area
Thermal Impedence
3/9
STD4NC50/-1
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/9
STD4NC50/-1
Normalized Gate Thereshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/9
STD4NC50/-1
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/9
STD4NC50/-1
TO-252 (DPAK) MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
2.20
2.40
0.087
0.094
A1
0.90
1.10
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.213
C
0.45
0.60
0.018
0.024
C2
0.48
0.60
0.019
0.024
D
6.00
6.20
0.236
0.244
E
6.40
6.60
0.252
0.260
G
4.40
4.60
0.173
0.181
H
9.35
10.10
0.368
0.398
L2
0.8
0.031
L4
0.60
1.00
0.024
0.039
V2
0o
8o
0o
0o
P032P_B
7/9
STD4NC50/-1
TO-251 (IPAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
2.4
0.086
MAX.
0.094
0.043
A
2.2
A1
0.9
1.1
0.035
A3
0.7
1.3
0.027
0.051
B
0.64
0.9
0.025
0.031
B2
5.2
5.4
0.204
0.212
B3
0.85
B5
0.033
0.3
0.012
B6
0.95
0.037
C
0.45
0.6
0.017
0.023
C2
0.48
0.6
0.019
0.023
D
6
6.2
0.236
0.244
E
6.4
6.6
0.252
0.260
G
4.4
4.6
0.173
0.181
H
15.9
16.3
0.626
0.641
L
9
9.4
0.354
0.370
L1
0.8
1.2
0.031
L2
0.8
0.047
1
0.031
0.039
A1
C2
A3
A
C
H
B
B3
=
1
=
2
G
=
=
=
E
B2
=
3
B5
L
D
B6
L2
L1
0068771-E
8/9
STD4NC50/-1
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9/9
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